nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A breakthrough for temperature and linearity stability from device to circuit-level with 14 nm junctionless SOI FinFET: Advancing K-band LNA performance
|
Khodabakhsh, Amir |
|
|
152 |
C |
p. |
artikel |
2 |
Aluminum addition to Sn-3Ag-0.5Cu-1In-xAl alloy effect on corrosion kinetics in HCl acid solution
|
Obaid, Masoud Giyathaddin |
|
|
152 |
C |
p. |
artikel |
3 |
Analysis of noise behavior and reliability of pocket doped negative capacitance FET under the impact of trap charges and temperature
|
Malvika, |
|
|
152 |
C |
p. |
artikel |
4 |
An efficient radiation hardening SRAM cell to mitigate single and double node upset soft errors
|
Mukku, Pavan Kumar |
|
|
152 |
C |
p. |
artikel |
5 |
Bond-pad damage in ultrasonic wedge bonding
|
Khajehvand, Milad |
|
|
152 |
C |
p. |
artikel |
6 |
Characterization of trap evolution in GaN-based HEMTs under pulsed stress
|
Wen, Qian |
|
|
152 |
C |
p. |
artikel |
7 |
Current imbalance analysis of multichip influenced by parasitic inductance within PP-IEGT
|
Wang, Zhiqiang |
|
|
152 |
C |
p. |
artikel |
8 |
Design of soft error correction flip-flop cells for highly reliable applications
|
Li, Hongchen |
|
|
152 |
C |
p. |
artikel |
9 |
ECS an endeavor towards providing similar cache reliability behavior in different programs
|
Ahmadilivani, Mohammad Hasan |
|
|
152 |
C |
p. |
artikel |
10 |
Editorial Board
|
|
|
|
152 |
C |
p. |
artikel |
11 |
Modelling and mitigating oscillation in E-mode GaN HEMT: A simulation-based approach to parasitic inductance optimization
|
Liu, Xinzhi |
|
|
152 |
C |
p. |
artikel |
12 |
Molecular dynamics simulations on mechanical behaviors of sintered nanocopper in power electronics packaging
|
Luo, Runding |
|
|
152 |
C |
p. |
artikel |
13 |
Performance degradation and reliability analysis of a MEMS flow sensor with accelerated degradation testing
|
Kang, Qiaoqiao |
|
|
152 |
C |
p. |
artikel |
14 |
Performance enhancement of 1.7 kV MOSFET using PIN-junction gate and integrated heterojunction
|
Wang, Qing-yuan |
|
|
152 |
C |
p. |
artikel |
15 |
Reliability evaluation of thick Ag wire bonding on Ni pad for power devices
|
Wei, Xing |
|
|
152 |
C |
p. |
artikel |
16 |
Solder fatigue life modeling of QFN components based on design of experiments
|
Käß, Markus |
|
|
152 |
C |
p. |
artikel |
17 |
Total ionizing dose and single event effect response of 22 nm ultra-thin body and buried oxide fully depleted silicon-on-insulator technology
|
Yin, Yanan |
|
|
152 |
C |
p. |
artikel |
18 |
Transient simulations and theoretical modeling of near-junction heat conduction in GaN-on-diamond HEMT
|
Shen, Yiyang |
|
|
152 |
C |
p. |
artikel |
19 |
Wavelet-based rapid identification of IGBT switch breakdown in voltage source converter
|
Ghosh, Sankha Subhra |
|
|
152 |
C |
p. |
artikel |