| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Aging-aware scheduling and binding in high-level synthesis considering workload effects
|
Es'haghi, Siavash
|
|
|
106 |
C |
p.
|
artikel
|
| 2 |
An investigation on shielding effectiveness of conductive adhesive
|
Tan, Ligang
|
|
|
106 |
C |
p.
|
artikel
|
| 3 |
A symmetric D flip-flop based PUF with improved uniqueness
|
Khan, Sajid
|
|
|
106 |
C |
p.
|
artikel
|
| 4 |
Contactless device characterization of transistor structures in silicon using electro optical frequency mapping (EOFM)
|
Beyreuther, A.
|
|
|
106 |
C |
p.
|
artikel
|
| 5 |
Editorial Board
|
|
|
|
106 |
C |
p.
|
artikel
|
| 6 |
Evaluation of the relationship between stress and lifetime of Pb-free solder joints subjected to vibration load using a generalized local stress approach
|
Thambi, J.
|
|
|
106 |
C |
p.
|
artikel
|
| 7 |
Extended Matrix Region Selection Code: An ECC for adjacent Multiple Cell Upset in memory arrays
|
Silva, Felipe
|
|
|
106 |
C |
p.
|
artikel
|
| 8 |
Research on fatigue of TSV-Cu under thermal and vibration coupled load based on numerical analysis
|
Fan, Zhengwei
|
|
|
106 |
C |
p.
|
artikel
|
| 9 |
The rate of Cu doped TiO2 interlayer effects on the electrical characteristics of Al/Cu:TiO2/n-Si (MOS) capacitors depend on frequency and voltage
|
Erdal, M.O.
|
|
|
106 |
C |
p.
|
artikel
|
| 10 |
Total ionizing dose effects on resistance stability of Pt/HfO2/Al2O3/TiN structure RRAM devices
|
Luo, Haipeng
|
|
|
106 |
C |
p.
|
artikel
|
| 11 |
TR-DLS analysis on analog circuit
|
Lua, Winson
|
|
|
106 |
C |
p.
|
artikel
|
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