| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Al-Induced oriented-crystallization of Si films on quartz and its application to epitaxial template for Ge growth
|
Kurosawa, Masashi
|
|
2011
|
60 |
1 |
p. 7-12
6 p.
|
artikel
|
| 2 |
Control of interfacial properties of Pr-oxide/Ge gate stack structure by introduction of nitrogen
|
Kato, Kimihiko
|
|
2011
|
60 |
1 |
p. 70-74
5 p.
|
artikel
|
| 3 |
Control of strain relaxation behavior of Ge1− x Sn x buffer layers
|
Shimura, Yosuke
|
|
2011
|
60 |
1 |
p. 84-88
5 p.
|
artikel
|
| 4 |
Control of topography and morphology for channel SiGe by in-situ HCl etching for future CMOS technologies with high-K metal gate
|
Reichel, Carsten
|
|
2011
|
60 |
1 |
p. 134-138
5 p.
|
artikel
|
| 5 |
Double-polysilicon SiGe HBT architecture with lateral base link
|
Fox, A.
|
|
2011
|
60 |
1 |
p. 93-99
7 p.
|
artikel
|
| 6 |
Editorial Board
|
|
|
2011
|
60 |
1 |
p. IFC-
1 p.
|
artikel
|
| 7 |
Effective passivation of defects in Ge-rich SiGe-on-insulator substrates by Al2O3 deposition and subsequent post-annealing
|
Yang, Haigui
|
|
2011
|
60 |
1 |
p. 128-133
6 p.
|
artikel
|
| 8 |
Fabrication of Ge-MOS capacitors with high quality interface by ultra-thin SiO2/GeO2 bi-layer passivation combined with the subsequent SiO2-depositions using magnetron sputtering
|
Hirayama, Kana
|
|
2011
|
60 |
1 |
p. 122-127
6 p.
|
artikel
|
| 9 |
Fabrication of high-Ge-fraction strained Si1− x Ge x /Si hole resonant tunneling diode using low-temperature Si2H6 reaction for nanometer-order ultrathin Si barriers
|
Takahashi, Kuniaki
|
|
2011
|
60 |
1 |
p. 112-115
4 p.
|
artikel
|
| 10 |
Foreword
|
Östling, Mikael
|
|
2011
|
60 |
1 |
p. 1-
1 p.
|
artikel
|
| 11 |
Formation of Ni(Ge1− x Sn x ) layers with solid-phase reaction in Ni/Ge1− x Sn x /Ge systems
|
Nishimura, Tsuyoshi
|
|
2011
|
60 |
1 |
p. 46-52
7 p.
|
artikel
|
| 12 |
Germanium photodetectors on Silicon-on-insulator grown with differential molecular beam epitaxy in silicon wells
|
Kaschel, M.
|
|
2011
|
60 |
1 |
p. 105-111
7 p.
|
artikel
|
| 13 |
Ge1− x Sn x stressors for strained-Ge CMOS
|
Takeuchi, S.
|
|
2011
|
60 |
1 |
p. 53-57
5 p.
|
artikel
|
| 14 |
Growth-direction-dependent characteristics of Ge-on-insulator by Si–Ge mixing triggered melting growth
|
Ohta, Y.
|
|
2011
|
60 |
1 |
p. 18-21
4 p.
|
artikel
|
| 15 |
High-density formation of Ge quantum dots on SiO2
|
Makihara, Katsunori
|
|
2011
|
60 |
1 |
p. 65-69
5 p.
|
artikel
|
| 16 |
Improving the high-frequency performance of SiGe HBTs by a global additional uniaxial stress
|
Viet Dinh, Thanh
|
|
2011
|
60 |
1 |
p. 58-64
7 p.
|
artikel
|
| 17 |
Integration of MOSFETs with SiGe dots as stressor material
|
Nanver, L.K.
|
|
2011
|
60 |
1 |
p. 75-83
9 p.
|
artikel
|
| 18 |
Introduction of local tensile strain on Ge substrates by SiGe stressors selectively grown on wet chemically recessed regions for strained Ge-nMOSFETs
|
Moriyama, Yoshihiko
|
|
2011
|
60 |
1 |
p. 89-92
4 p.
|
artikel
|
| 19 |
Low threading dislocation density Ge deposited on Si (100) using RPCVD
|
Yamamoto, Yuji
|
|
2011
|
60 |
1 |
p. 2-6
5 p.
|
artikel
|
| 20 |
Non-destructive thickness characterization of Si based heterostructure by X-ray diffraction and reflectivity
|
Liu, Xue-Chao
|
|
2011
|
60 |
1 |
p. 42-45
4 p.
|
artikel
|
| 21 |
SiGe/Si quantum structures as a thermistor material for low cost IR microbolometer focal plane arrays
|
Andersson, J.Y.
|
|
2011
|
60 |
1 |
p. 100-104
5 p.
|
artikel
|
| 22 |
Si passivation for Ge pMOSFETs: Impact of Si cap growth conditions
|
Vincent, B.
|
|
2011
|
60 |
1 |
p. 116-121
6 p.
|
artikel
|
| 23 |
Solid-phase epitaxy of amorphous silicon films by in situ postannealing using RPCVD
|
Skibitzki, Oliver
|
|
2011
|
60 |
1 |
p. 13-17
5 p.
|
artikel
|
| 24 |
Strained single-crystal GOI (Ge on Insulator) arrays by rapid-melting growth from Si (111) micro-seeds
|
Sakane, T.
|
|
2011
|
60 |
1 |
p. 22-25
4 p.
|
artikel
|
| 25 |
Study of Arsenic ion implantation of patterned strained Si NWs
|
Minamisawa, R.A.
|
|
2011
|
60 |
1 |
p. 31-36
6 p.
|
artikel
|
| 26 |
Subband structure and effective mass of relaxed and strained Ge (110) PMOSFETs
|
Hsieh, Bing-Fong
|
|
2011
|
60 |
1 |
p. 37-41
5 p.
|
artikel
|
| 27 |
X-ray microdiffraction investigation of crystallinity and strain relaxation in Ge thin lines selectively grown on Si(001) substrates
|
Ebihara, Kouhei
|
|
2011
|
60 |
1 |
p. 26-30
5 p.
|
artikel
|
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