Si passivation for Ge pMOSFETs: Impact of Si cap growth conditions
Titel:
Si passivation for Ge pMOSFETs: Impact of Si cap growth conditions
Auteur:
Vincent, B. Loo, R. Vandervorst, W. Delmotte, J. Douhard, B. Valev, V.K. Vanbel, M. Verbiest, T. Rip, J. Brijs, B. Conard, T. Claypool, C. Takeuchi, S. Zaima, S. Mitard, J. De Jaeger, B. Dekoster, J. Caymax, M.