| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Dynamic body potential variation in FD SOI MOSFETs operated in deep non-equilibrium regime: Model and applications
|
Bawedin, M.
|
|
|
54 |
2 |
p. 104-114
|
artikel
|
| 2 |
Editorial Board
|
|
|
|
54 |
2 |
p. IFC
|
artikel
|
| 3 |
Effect of high-energy neutrons on MuGFETs
|
Kilchytska, V.
|
|
|
54 |
2 |
p. 196-204
|
artikel
|
| 4 |
Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs
|
Put, S.
|
|
|
54 |
2 |
p. 178-184
|
artikel
|
| 5 |
Electron subband structure in strained silicon UTB films from the Hensel–Hasegawa–Nakayama model – Part 1 analytical consideration and strain-induced valley splitting
|
Windbacher, Thomas
|
|
|
54 |
2 |
p. 137-142
|
artikel
|
| 6 |
Electron subband structure in strained silicon UTB films from the Hensel–Hasegawa–Nakayama model – Part 2 efficient self-consistent numerical solution of the k · p schrödinger equation
|
Baumgartner, Oskar
|
|
|
54 |
2 |
p. 143-148
|
artikel
|
| 7 |
Experimental study of transconductance and mobility behaviors in ultra-thin SOI MOSFETs with standard and thin buried oxides
|
Rudenko, T.
|
|
|
54 |
2 |
p. 164-170
|
artikel
|
| 8 |
Fabrication of Silicon on Diamond (SOD) substrates by either the Bonded and Etched-back SOI (BESOI) or the Smart-Cut™ technology
|
Widiez, J.
|
|
|
54 |
2 |
p. 158-163
|
artikel
|
| 9 |
Foreword
|
Engström, Olof
|
|
|
54 |
2 |
p. 85
|
artikel
|
| 10 |
Hole transport in DGSOI devices: Orientation and silicon thickness effects
|
Donetti, L.
|
|
|
54 |
2 |
p. 191-195
|
artikel
|
| 11 |
Large-signal analysis of substrate effects in RF-power SOI-LDMOS transistors
|
Vestling, Lars
|
|
|
54 |
2 |
p. 171-177
|
artikel
|
| 12 |
Low-temperature characterization and modeling of advanced GeOI pMOSFETs: Mobility mechanisms and origin of the parasitic conduction
|
Van Den Daele, W.
|
|
|
54 |
2 |
p. 205-212
|
artikel
|
| 13 |
Mobility enhancement by CESL strain in short-channel ultrathin SOI MOSFETs
|
Pham-Nguyen, L.
|
|
|
54 |
2 |
p. 123-130
|
artikel
|
| 14 |
Multi-Subband Monte Carlo study of device orientation effects in ultra-short channel DGSOI
|
Sampedro, C.
|
|
|
54 |
2 |
p. 131-136
|
artikel
|
| 15 |
Oxygen out-diffusion from buried layers in SOI and SiC–SOI substrates
|
Li, L.-G.
|
|
|
54 |
2 |
p. 153-157
|
artikel
|
| 16 |
Performance estimation of junctionless multigate transistors
|
Lee, Chi-Woo
|
|
|
54 |
2 |
p. 97-103
|
artikel
|
| 17 |
Physical modeling of millimetre wave signal reflection from forward biased PIN diodes
|
Jackson, R.P.
|
|
|
54 |
2 |
p. 149-152
|
artikel
|
| 18 |
SOI versus bulk-silicon nanoscale FinFETs
|
Fossum, Jerry G.
|
|
|
54 |
2 |
p. 86-89
|
artikel
|
| 19 |
Substrate impact on threshold voltage and subthreshold slope of sub-32nm ultra thin SOI MOSFETs with thin buried oxide and undoped channel
|
Burignat, S.
|
|
|
54 |
2 |
p. 213-219
|
artikel
|
| 20 |
Suppression of gate-induced drain leakage by optimization of junction profiles in 22nm and 32nm SOI nFETs
|
Schenk, Andreas
|
|
|
54 |
2 |
p. 115-122
|
artikel
|
| 21 |
Systematic study of Schottky barrier MOSFETs with dopant segregation on thin-body SOI
|
Urban, C.
|
|
|
54 |
2 |
p. 185-190
|
artikel
|
| 22 |
Thin-film devices for low power applications
|
Monfray, S.
|
|
|
54 |
2 |
p. 90-96
|
artikel
|
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