no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
1 |
Dynamic body potential variation in FD SOI MOSFETs operated in deep non-equilibrium regime: Model and applications
|
Bawedin, M. |
|
|
54 |
2 |
p. 104-114 |
article |
2 |
Editorial Board
|
|
|
|
54 |
2 |
p. IFC |
article |
3 |
Effect of high-energy neutrons on MuGFETs
|
Kilchytska, V. |
|
|
54 |
2 |
p. 196-204 |
article |
4 |
Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs
|
Put, S. |
|
|
54 |
2 |
p. 178-184 |
article |
5 |
Electron subband structure in strained silicon UTB films from the Hensel–Hasegawa–Nakayama model – Part 1 analytical consideration and strain-induced valley splitting
|
Windbacher, Thomas |
|
|
54 |
2 |
p. 137-142 |
article |
6 |
Electron subband structure in strained silicon UTB films from the Hensel–Hasegawa–Nakayama model – Part 2 efficient self-consistent numerical solution of the k · p schrödinger equation
|
Baumgartner, Oskar |
|
|
54 |
2 |
p. 143-148 |
article |
7 |
Experimental study of transconductance and mobility behaviors in ultra-thin SOI MOSFETs with standard and thin buried oxides
|
Rudenko, T. |
|
|
54 |
2 |
p. 164-170 |
article |
8 |
Fabrication of Silicon on Diamond (SOD) substrates by either the Bonded and Etched-back SOI (BESOI) or the Smart-Cut™ technology
|
Widiez, J. |
|
|
54 |
2 |
p. 158-163 |
article |
9 |
Foreword
|
Engström, Olof |
|
|
54 |
2 |
p. 85 |
article |
10 |
Hole transport in DGSOI devices: Orientation and silicon thickness effects
|
Donetti, L. |
|
|
54 |
2 |
p. 191-195 |
article |
11 |
Large-signal analysis of substrate effects in RF-power SOI-LDMOS transistors
|
Vestling, Lars |
|
|
54 |
2 |
p. 171-177 |
article |
12 |
Low-temperature characterization and modeling of advanced GeOI pMOSFETs: Mobility mechanisms and origin of the parasitic conduction
|
Van Den Daele, W. |
|
|
54 |
2 |
p. 205-212 |
article |
13 |
Mobility enhancement by CESL strain in short-channel ultrathin SOI MOSFETs
|
Pham-Nguyen, L. |
|
|
54 |
2 |
p. 123-130 |
article |
14 |
Multi-Subband Monte Carlo study of device orientation effects in ultra-short channel DGSOI
|
Sampedro, C. |
|
|
54 |
2 |
p. 131-136 |
article |
15 |
Oxygen out-diffusion from buried layers in SOI and SiC–SOI substrates
|
Li, L.-G. |
|
|
54 |
2 |
p. 153-157 |
article |
16 |
Performance estimation of junctionless multigate transistors
|
Lee, Chi-Woo |
|
|
54 |
2 |
p. 97-103 |
article |
17 |
Physical modeling of millimetre wave signal reflection from forward biased PIN diodes
|
Jackson, R.P. |
|
|
54 |
2 |
p. 149-152 |
article |
18 |
SOI versus bulk-silicon nanoscale FinFETs
|
Fossum, Jerry G. |
|
|
54 |
2 |
p. 86-89 |
article |
19 |
Substrate impact on threshold voltage and subthreshold slope of sub-32nm ultra thin SOI MOSFETs with thin buried oxide and undoped channel
|
Burignat, S. |
|
|
54 |
2 |
p. 213-219 |
article |
20 |
Suppression of gate-induced drain leakage by optimization of junction profiles in 22nm and 32nm SOI nFETs
|
Schenk, Andreas |
|
|
54 |
2 |
p. 115-122 |
article |
21 |
Systematic study of Schottky barrier MOSFETs with dopant segregation on thin-body SOI
|
Urban, C. |
|
|
54 |
2 |
p. 185-190 |
article |
22 |
Thin-film devices for low power applications
|
Monfray, S. |
|
|
54 |
2 |
p. 90-96 |
article |