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                             22 results found
no title author magazine year volume issue page(s) type
1 Dynamic body potential variation in FD SOI MOSFETs operated in deep non-equilibrium regime: Model and applications Bawedin, M.

54 2 p. 104-114
article
2 Editorial Board
54 2 p. IFC
article
3 Effect of high-energy neutrons on MuGFETs Kilchytska, V.

54 2 p. 196-204
article
4 Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs Put, S.

54 2 p. 178-184
article
5 Electron subband structure in strained silicon UTB films from the Hensel–Hasegawa–Nakayama model – Part 1 analytical consideration and strain-induced valley splitting Windbacher, Thomas

54 2 p. 137-142
article
6 Electron subband structure in strained silicon UTB films from the Hensel–Hasegawa–Nakayama model – Part 2 efficient self-consistent numerical solution of the k · p schrödinger equation Baumgartner, Oskar

54 2 p. 143-148
article
7 Experimental study of transconductance and mobility behaviors in ultra-thin SOI MOSFETs with standard and thin buried oxides Rudenko, T.

54 2 p. 164-170
article
8 Fabrication of Silicon on Diamond (SOD) substrates by either the Bonded and Etched-back SOI (BESOI) or the Smart-Cut™ technology Widiez, J.

54 2 p. 158-163
article
9 Foreword Engström, Olof

54 2 p. 85
article
10 Hole transport in DGSOI devices: Orientation and silicon thickness effects Donetti, L.

54 2 p. 191-195
article
11 Large-signal analysis of substrate effects in RF-power SOI-LDMOS transistors Vestling, Lars

54 2 p. 171-177
article
12 Low-temperature characterization and modeling of advanced GeOI pMOSFETs: Mobility mechanisms and origin of the parasitic conduction Van Den Daele, W.

54 2 p. 205-212
article
13 Mobility enhancement by CESL strain in short-channel ultrathin SOI MOSFETs Pham-Nguyen, L.

54 2 p. 123-130
article
14 Multi-Subband Monte Carlo study of device orientation effects in ultra-short channel DGSOI Sampedro, C.

54 2 p. 131-136
article
15 Oxygen out-diffusion from buried layers in SOI and SiC–SOI substrates Li, L.-G.

54 2 p. 153-157
article
16 Performance estimation of junctionless multigate transistors Lee, Chi-Woo

54 2 p. 97-103
article
17 Physical modeling of millimetre wave signal reflection from forward biased PIN diodes Jackson, R.P.

54 2 p. 149-152
article
18 SOI versus bulk-silicon nanoscale FinFETs Fossum, Jerry G.

54 2 p. 86-89
article
19 Substrate impact on threshold voltage and subthreshold slope of sub-32nm ultra thin SOI MOSFETs with thin buried oxide and undoped channel Burignat, S.

54 2 p. 213-219
article
20 Suppression of gate-induced drain leakage by optimization of junction profiles in 22nm and 32nm SOI nFETs Schenk, Andreas

54 2 p. 115-122
article
21 Systematic study of Schottky barrier MOSFETs with dopant segregation on thin-body SOI Urban, C.

54 2 p. 185-190
article
22 Thin-film devices for low power applications Monfray, S.

54 2 p. 90-96
article
                             22 results found
 
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