| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A high efficient, low power, and compact charge pump by vertical MOSFETs
|
Sakui, Koji
|
|
2010
|
54 |
10 |
p. 1192-1196
5 p.
|
artikel
|
| 2 |
Analytical modeling of the gate tunneling leakage for the determination of adequate high-k dielectrics in double-gate SOI MOSFETs at the 22nm node
|
Darbandy, Ghader
|
|
2010
|
54 |
10 |
p. 1083-1087
5 p.
|
artikel
|
| 3 |
Application of a novel test system to characterize single-event effects at cryogenic temperatures
|
Ramachandran, Vishwanath
|
|
2010
|
54 |
10 |
p. 1052-1059
8 p.
|
artikel
|
| 4 |
A SiGe/Si multiple quantum well avalanche photodetector
|
Sun, Po-Hsing
|
|
2010
|
54 |
10 |
p. 1216-1220
5 p.
|
artikel
|
| 5 |
A toggle MRAM bit modeled in Verilog-A
|
Engelbrecht, Linda M.
|
|
2010
|
54 |
10 |
p. 1135-1142
8 p.
|
artikel
|
| 6 |
Atomic layer deposited high-k nanolaminate capacitors
|
Smith, S.W.
|
|
2010
|
54 |
10 |
p. 1076-1082
7 p.
|
artikel
|
| 7 |
Characterization of nanometer scale compositionally inhomogeneous AlGaN active regions on bulk AlN substrates
|
Sampath, A.V.
|
|
2010
|
54 |
10 |
p. 1130-1134
5 p.
|
artikel
|
| 8 |
Charge trapping and current-conduction mechanisms of metal–oxide–semiconductor capacitors with La x Ta y dual-doped HfON dielectrics
|
Cheng, Chin-Lung
|
|
2010
|
54 |
10 |
p. 1197-1203
7 p.
|
artikel
|
| 9 |
Controlled growth, patterning and placement of carbon nanotube thin films
|
Sangwan, V.K.
|
|
2010
|
54 |
10 |
p. 1204-1210
7 p.
|
artikel
|
| 10 |
Crystal quality and conductivity type of (002) ZnO films on (100) Si substrates for device applications
|
Sardari, Saeed Esmaili
|
|
2010
|
54 |
10 |
p. 1150-1154
5 p.
|
artikel
|
| 11 |
Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes
|
Zhao, Hongping
|
|
2010
|
54 |
10 |
p. 1119-1124
6 p.
|
artikel
|
| 12 |
Design considerations for integration of Horizontal Current Bipolar Transistor (HCBT) with 0.18μm bulk CMOS technology
|
Koričić, Marko
|
|
2010
|
54 |
10 |
p. 1166-1172
7 p.
|
artikel
|
| 13 |
Design of SOI FinFET on 32nm technology node for low standby power (LSTP) operation considering gate-induced drain leakage (GIDL)
|
Cho, Seongjae
|
|
2010
|
54 |
10 |
p. 1060-1065
6 p.
|
artikel
|
| 14 |
Editorial Board
|
|
|
2010
|
54 |
10 |
p. IFC-
1 p.
|
artikel
|
| 15 |
Effects of fin width on memory windows in FinFET ZRAMs
|
Zhang, E.X.
|
|
2010
|
54 |
10 |
p. 1155-1159
5 p.
|
artikel
|
| 16 |
Electrical characteristics of SiGe channel MOS devices with high-k/metal gate incorporated with nitrogen by plasma immersion ion implantation
|
Fu, Chung-Hao
|
|
2010
|
54 |
10 |
p. 1094-1097
4 p.
|
artikel
|
| 17 |
Epitaxial graphene top-gate FETs on silicon substrates
|
Kang, Hyun-Chul
|
|
2010
|
54 |
10 |
p. 1071-1075
5 p.
|
artikel
|
| 18 |
Facile pyrolytic synthesis of silicon nanowires
|
Chan, Joo C.
|
|
2010
|
54 |
10 |
p. 1185-1191
7 p.
|
artikel
|
| 19 |
Foreword
|
Iliadis, Agis A.
|
|
2010
|
54 |
10 |
p. 1051-
1 p.
|
artikel
|
| 20 |
High-temperature modeling of AlGaN/GaN HEMTs
|
Vitanov, S.
|
|
2010
|
54 |
10 |
p. 1105-1112
8 p.
|
artikel
|
| 21 |
High work function metal gate and reliability improvement for MOS device by integration of TiN/MoN and HfAlO dielectric
|
Fu, Chung-Hao
|
|
2010
|
54 |
10 |
p. 1160-1165
6 p.
|
artikel
|
| 22 |
Implementation of E-Beam Proximity Effect Correction using linear programming techniques for the fabrication of asymmetric bow-tie antennas
|
Yesilkoy, Filiz
|
|
2010
|
54 |
10 |
p. 1211-1215
5 p.
|
artikel
|
| 23 |
Improvement on programming and erasing speeds for charge-trapping flash memory device with SiGe buried channel
|
Liu, Li-Jung
|
|
2010
|
54 |
10 |
p. 1113-1118
6 p.
|
artikel
|
| 24 |
Nonpolar growth and characterization of a-plane InGaN/GaN quantum well structures with different indium compositions
|
Song, Hooyoung
|
|
2010
|
54 |
10 |
p. 1221-1226
6 p.
|
artikel
|
| 25 |
Reliable procedure for electrical characterization of MOS-based devices
|
Dobeš, Josef
|
|
2010
|
54 |
10 |
p. 1173-1184
12 p.
|
artikel
|
| 26 |
Self-aligned ALD AlO x T-gate insulator for gate leakage current suppression in SiN x -passivated AlGaN/GaN HEMTs
|
Meyer, David J.
|
|
2010
|
54 |
10 |
p. 1098-1104
7 p.
|
artikel
|
| 27 |
Si implant-assisted Ohmic contacts to GaN
|
Nguyen, Cuong
|
|
2010
|
54 |
10 |
p. 1227-1231
5 p.
|
artikel
|
| 28 |
The benefits and current progress of SiC SGTOs for pulsed power applications
|
Ogunniyi, Aderinto
|
|
2010
|
54 |
10 |
p. 1232-1237
6 p.
|
artikel
|
| 29 |
The spatial origin of current noise in semiconductor devices in the framework of semiclassical transport
|
Korman, C.E.
|
|
2010
|
54 |
10 |
p. 1088-1093
6 p.
|
artikel
|
| 30 |
Three-color photodetector based on quantum dots and resonant-tunneling diodes coupled with conductive polymers
|
Liao, Sicheng
|
|
2010
|
54 |
10 |
p. 1066-1070
5 p.
|
artikel
|
| 31 |
Ultrafast nonlinear optical effects in semiconductor quantum wells resonantly driven by strong few-cycle terahertz pulses
|
Tomaino, J.L.
|
|
2010
|
54 |
10 |
p. 1125-1129
5 p.
|
artikel
|
| 32 |
ZnO nanobridge devices fabricated using carbonized photoresist
|
Pelatt, B.D.
|
|
2010
|
54 |
10 |
p. 1143-1149
7 p.
|
artikel
|
Tijdschrift beschrijving