| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
All injection level power PiN diode model including temperature dependence
|
Jankovic, Nebojsa
|
|
2007
|
51 |
5 |
p. 719-725
7 p.
|
artikel
|
| 2 |
All-organic electrochemical devices based on a tetracyanoquinodimethane complex
|
Arena, A.
|
|
2007
|
51 |
5 |
p. 639-643
5 p.
|
artikel
|
| 3 |
Analysis of Al/Ti, Al/Ni multiple and triple layer contacts to p-type 4H-SiC
|
Jennings, M.R.
|
|
2007
|
51 |
5 |
p. 797-801
5 p.
|
artikel
|
| 4 |
Analysis of current–voltage–temperature characteristics in SiC Schottky diodes using threshold-accepting simulated-annealing techniques
|
Sarpatwari, K.
|
|
2007
|
51 |
5 |
p. 644-649
6 p.
|
artikel
|
| 5 |
Analytic channel potential solution to the undoped surrounding-gate MOSFETs
|
He, Jin
|
|
2007
|
51 |
5 |
p. 802-805
4 p.
|
artikel
|
| 6 |
A new extraction method of poly-Si TFT model parameters in the leakage region
|
Wu, W.J.
|
|
2007
|
51 |
5 |
p. 778-783
6 p.
|
artikel
|
| 7 |
A novel 3D embedded gate field effect transistor – Screen-grid FET – Device concept and modelling
|
Fobelets, K.
|
|
2007
|
51 |
5 |
p. 749-756
8 p.
|
artikel
|
| 8 |
Compact model for highly-doped double-gate SOI MOSFETs targeting baseband analog applications
|
Moldovan, Oana
|
|
2007
|
51 |
5 |
p. 655-661
7 p.
|
artikel
|
| 9 |
Computationally efficient method for scattering device simulation in nanoscale MOSFETs
|
Iwata, Hideyuki
|
|
2007
|
51 |
5 |
p. 708-713
6 p.
|
artikel
|
| 10 |
250°C operation normally-off GaN MOSFETs
|
Niiyama, Yuki
|
|
2007
|
51 |
5 |
p. 784-787
4 p.
|
artikel
|
| 11 |
Corrigendum to “An explicit current–voltage model for undoped double-gate MOSFETs based on accurate yet analytic approximation to the carrier concentration” [Solid-State Electron. 51 (2007) 179–185]
|
He, Jin
|
|
2007
|
51 |
5 |
p. 816-
1 p.
|
artikel
|
| 12 |
Direct tunneling effective mass of electrons determined by intrinsic charge-up process
|
König, D.
|
|
2007
|
51 |
5 |
p. 650-654
5 p.
|
artikel
|
| 13 |
Editorial Board
|
|
|
2007
|
51 |
5 |
p. IFC-
1 p.
|
artikel
|
| 14 |
Electrothermal simulation of SOI CMOS analog integrated circuits
|
Yu, Feixia
|
|
2007
|
51 |
5 |
p. 691-702
12 p.
|
artikel
|
| 15 |
Enhanced output of flip-chip light-emitting diodes with a sidewall reflector
|
Zhu, Yanxu
|
|
2007
|
51 |
5 |
p. 674-677
4 p.
|
artikel
|
| 16 |
Enhancement of the light output of GaN-based light-emitting diodes with surface-patterned ITO electrodes by maskless wet-etching
|
Leem, Dong-Seok
|
|
2007
|
51 |
5 |
p. 793-796
4 p.
|
artikel
|
| 17 |
Field electron emission of double walled carbon nanotube film prepared by drop casting method
|
Somani, Prakash R.
|
|
2007
|
51 |
5 |
p. 788-792
5 p.
|
artikel
|
| 18 |
1/f noise characterization of amorphous/nanocrystalline silicon bilayer thin-film transistors
|
Hatzopoulos, A.T.
|
|
2007
|
51 |
5 |
p. 726-731
6 p.
|
artikel
|
| 19 |
Granular semiconductor/pyroelectric media as a tunable plasmonic crystal
|
Dmitriev, A.P.
|
|
2007
|
51 |
5 |
p. 812-815
4 p.
|
artikel
|
| 20 |
High injection regime of the super barrier™ rectifier
|
Rodov, V.
|
|
2007
|
51 |
5 |
p. 714-718
5 p.
|
artikel
|
| 21 |
Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs
|
von Haartman, M.
|
|
2007
|
51 |
5 |
p. 771-777
7 p.
|
artikel
|
| 22 |
Improvement of sub-threshold current models for a-Si:H thin-film transistors
|
Wang, Lijuan
|
|
2007
|
51 |
5 |
p. 703-707
5 p.
|
artikel
|
| 23 |
Modeling of retention characteristics for metal and semiconductor nanocrystal memories
|
Guan, Weihua
|
|
2007
|
51 |
5 |
p. 806-811
6 p.
|
artikel
|
| 24 |
Optimisation of ac anodisation parameters for the improvement of electrical properties of thermally grown ultrathin gate oxide
|
Kailath, Binsu J.
|
|
2007
|
51 |
5 |
p. 762-770
9 p.
|
artikel
|
| 25 |
Optimized parameter extraction using fuzzy logic
|
Picos, Rodrigo
|
|
2007
|
51 |
5 |
p. 683-690
8 p.
|
artikel
|
| 26 |
Recessed channel and/or buried source/drain structures for improvement in performance of Schottky barrier source/drain transistors with high-k gate dielectrics
|
Ono, Mizuki
|
|
2007
|
51 |
5 |
p. 732-738
7 p.
|
artikel
|
| 27 |
Self-consistent 2D compact modeling of nanoscale bulk MOSFETs
|
Kloes, Alexander
|
|
2007
|
51 |
5 |
p. 739-748
10 p.
|
artikel
|
| 28 |
Simulation study of the noise figure of nanometer-gate nMOS transistors near the scaling limit
|
Cai, M.
|
|
2007
|
51 |
5 |
p. 667-673
7 p.
|
artikel
|
| 29 |
Study of a novel Si/SiC hetero-junction MOSFET
|
Chen, L.
|
|
2007
|
51 |
5 |
p. 662-666
5 p.
|
artikel
|
| 30 |
The influence of microstructure on optical properties of porous silicon
|
Zhao, Yue
|
|
2007
|
51 |
5 |
p. 678-682
5 p.
|
artikel
|
| 31 |
Ultraviolet photoconductive detector with high visible rejection and fast photoresponse based on ZnO thin film
|
Liu, K.W.
|
|
2007
|
51 |
5 |
p. 757-761
5 p.
|
artikel
|
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