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                                       Details for article 11 of 31 found articles
 
 
  Corrigendum to “An explicit current–voltage model for undoped double-gate MOSFETs based on accurate yet analytic approximation to the carrier concentration” [Solid-State Electron. 51 (2007) 179–185]
 
 
Title: Corrigendum to “An explicit current–voltage model for undoped double-gate MOSFETs based on accurate yet analytic approximation to the carrier concentration” [Solid-State Electron. 51 (2007) 179–185]
Author: He, Jin
Bian, Wei
Tao, Yadong
Liu, Feng
Lu, Kailiang
Wu, Wen
Wang, Ting
Chan, Mansun
Appeared in: Solid-state electronics
Paging: Volume 51 (2007) nr. 5 pages 1 p.
Year: 2007
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 11 of 31 found articles
 
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