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                                       Details for article 10 of 31 found articles
 
 
  250°C operation normally-off GaN MOSFETs
 
 
Title: 250°C operation normally-off GaN MOSFETs
Author: Niiyama, Yuki
Kambayashi, Hiroshi
Ootomo, Shinya
Nomura, Takehiko
Yoshida, Seikoh
Appeared in: Solid-state electronics
Paging: Volume 51 (2007) nr. 5 pages 4 p.
Year: 2007
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 10 of 31 found articles
 
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