| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Advanced BCD technology for automotive, audio and power applications
|
Wessels, Piet
|
|
2007
|
51 |
2 |
p. 195-211
17 p.
|
artikel
|
| 2 |
An electron injection model for time-dependent simulators of nanoscale devices with electron confinement: Application to the comparison of the intrinsic noise of 3D-, 2D- and 1D-ballistic transistors
|
Oriols, X.
|
|
2007
|
51 |
2 |
p. 306-319
14 p.
|
artikel
|
| 3 |
Characterization of quantum efficiency, effective lifetime and mobility in thin film ungated SOI lateral PIN photodiodes
|
Afzalian, Aryan
|
|
2007
|
51 |
2 |
p. 337-342
6 p.
|
artikel
|
| 4 |
Editorial Board
|
|
|
2007
|
51 |
2 |
p. IFC-
1 p.
|
artikel
|
| 5 |
Evaluation of triple-gate FinFETs with SiO2–HfO2–TiN gate stack under analog operation
|
Pavanello, M.A.
|
|
2007
|
51 |
2 |
p. 285-291
7 p.
|
artikel
|
| 6 |
Foreword
|
Clerc, Raphaël
|
|
2007
|
51 |
2 |
p. 187-
1 p.
|
artikel
|
| 7 |
Front- and back-channel mobility in ultrathin SOI-MOSFETs by front-gate split CV method
|
Ohata, A.
|
|
2007
|
51 |
2 |
p. 245-251
7 p.
|
artikel
|
| 8 |
Low frequency noise in multi-gate SOI CMOS devices
|
Zafari, Leily
|
|
2007
|
51 |
2 |
p. 292-298
7 p.
|
artikel
|
| 9 |
Measurement of in-plane and depth strain profiles in strained-Si substrates
|
Ogura, Atsushi
|
|
2007
|
51 |
2 |
p. 219-225
7 p.
|
artikel
|
| 10 |
MEMS on cavity-SOI wafers
|
Luoto, Hannu
|
|
2007
|
51 |
2 |
p. 328-332
5 p.
|
artikel
|
| 11 |
Nonclassical devices in SOI: Genuine or copyright from III–V
|
Luryi, S.
|
|
2007
|
51 |
2 |
p. 212-218
7 p.
|
artikel
|
| 12 |
Physical insights on nanoscale multi-gate CMOS design
|
Fossum, Jerry G.
|
|
2007
|
51 |
2 |
p. 188-194
7 p.
|
artikel
|
| 13 |
Planar double-gate SOI MOS devices: Fabrication by wafer bonding over pre-patterned cavities and electrical characterization
|
Chung, T.M.
|
|
2007
|
51 |
2 |
p. 231-238
8 p.
|
artikel
|
| 14 |
Scaling issues for analogue circuits using Double Gate SOI transistors
|
Lim, Tao Chuan
|
|
2007
|
51 |
2 |
p. 320-327
8 p.
|
artikel
|
| 15 |
Some issues of hot-carrier degradation and negative bias temperature instability of advanced SOI CMOS transistors
|
Ioannou, D.P.
|
|
2007
|
51 |
2 |
p. 268-277
10 p.
|
artikel
|
| 16 |
The low-frequency noise behaviour of graded-channel SOI nMOSFETs
|
Simoen, E.
|
|
2007
|
51 |
2 |
p. 260-267
8 p.
|
artikel
|
| 17 |
Thin film fully-depleted SOI four-gate transistors
|
Akarvardar, K.
|
|
2007
|
51 |
2 |
p. 278-284
7 p.
|
artikel
|
| 18 |
Towards Si-based photonic circuits: Integrating photonic crystals in silicon-on-insulator platforms
|
Kocher, G.
|
|
2007
|
51 |
2 |
p. 333-336
4 p.
|
artikel
|
| 19 |
Transition from partial to full depletion in advanced SOI MOSFETs: Impact of channel length and temperature
|
Zaouia, S.
|
|
2007
|
51 |
2 |
p. 252-259
8 p.
|
artikel
|
| 20 |
Ultra-thin fully-depleted SOI MOSFETs: Special charge properties and coupling effects
|
Eminente, S.
|
|
2007
|
51 |
2 |
p. 239-244
6 p.
|
artikel
|
| 21 |
Uniaxially strained silicon by wafer bonding and layer transfer
|
Himcinschi, C.
|
|
2007
|
51 |
2 |
p. 226-230
5 p.
|
artikel
|
| 22 |
Volume inversion mobility in SOI MOSFETs for different thin body orientations
|
Sverdlov, V.
|
|
2007
|
51 |
2 |
p. 299-305
7 p.
|
artikel
|
Tijdschrift beschrijving