| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
A high performance pMOSFET with two-step recessed SiGe-S/D structure for 32nm node and beyond
|
Yasutake, Nobuaki
|
|
2007
|
51 |
11-12 |
p. 1437-1443
7 p.
|
article
|
| 2 |
An EKV-based high voltage MOSFET model with improved mobility and drift model
|
Chauhan, Yogesh Singh
|
|
2007
|
51 |
11-12 |
p. 1581-1588
8 p.
|
article
|
| 3 |
An industrial view on compact modeling
|
Woltjer, Reinout
|
|
2007
|
51 |
11-12 |
p. 1572-1580
9 p.
|
article
|
| 4 |
A novel channel-program–erase technique with substrate transient hot carrier injection for SONOS NAND flash application
|
Hsu, Tzu-Hsuan
|
|
2007
|
51 |
11-12 |
p. 1523-1528
6 p.
|
article
|
| 5 |
A systematic investigation of work function in advanced metal gate–HfO2–SiO2 structures with bevel oxide
|
Kuriyama, Atsushi
|
|
2007
|
51 |
11-12 |
p. 1515-1522
8 p.
|
article
|
| 6 |
Bandgap engineering in Alq3- and NPB-based organic light-emitting diodes for efficient green, blue and white emission
|
Divayana, Y.
|
|
2007
|
51 |
11-12 |
p. 1618-1623
6 p.
|
article
|
| 7 |
Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon–carbon source/drain regions
|
Ang, Kah-Wee
|
|
2007
|
51 |
11-12 |
p. 1444-1449
6 p.
|
article
|
| 8 |
CMOS compatible dual metal gate integration with successful V th adjustment on high-k HfTaON by high-temperature metal intermixing
|
Ren, C.
|
|
2007
|
51 |
11-12 |
p. 1479-1484
6 p.
|
article
|
| 9 |
DRAM retention tail improvement by trap passivation
|
Weber, A.
|
|
2007
|
51 |
11-12 |
p. 1534-1539
6 p.
|
article
|
| 10 |
Editorial Board
|
|
|
2007
|
51 |
11-12 |
p. IFC-
1 p.
|
article
|
| 11 |
Experimental evidence and extraction of the electron mass variation in [110] uniaxially strained MOSFETs
|
Rochette, F.
|
|
2007
|
51 |
11-12 |
p. 1458-1465
8 p.
|
article
|
| 12 |
Experimental evidence of mobility enhancement in short-channel ultra-thin body double-gate MOSFETs by magnetoresistance technique
|
Chaisantikulwat, W.
|
|
2007
|
51 |
11-12 |
p. 1494-1499
6 p.
|
article
|
| 13 |
Geometry optimization for carbon nanotube transistors
|
Pourfath, M.
|
|
2007
|
51 |
11-12 |
p. 1565-1571
7 p.
|
article
|
| 14 |
Germanium FETs and capacitors with rare earth CeO2/HfO2 gates
|
Dimoulas, A.
|
|
2007
|
51 |
11-12 |
p. 1508-1514
7 p.
|
article
|
| 15 |
High pass filter with above IC integrated SrTiO3 high K MIM capacitors
|
Defaÿ, Emmanuel
|
|
2007
|
51 |
11-12 |
p. 1624-1628
5 p.
|
article
|
| 16 |
High threshold voltage matching performance on gate-all-around MOSFET
|
Cathignol, Augustin
|
|
2007
|
51 |
11-12 |
p. 1450-1457
8 p.
|
article
|
| 17 |
Investigation of hafnium-aluminate alloys in view of integration as interpoly dielectrics of future Flash memories
|
Molas, Gabriel
|
|
2007
|
51 |
11-12 |
p. 1540-1546
7 p.
|
article
|
| 18 |
Length scaling of the Double Gate Tunnel FET with a high-K gate dielectric
|
Boucart, Kathy
|
|
2007
|
51 |
11-12 |
p. 1500-1507
8 p.
|
article
|
| 19 |
Modeling and system-level simulation of a CMOS convective accelerometer
|
Leman, O.
|
|
2007
|
51 |
11-12 |
p. 1609-1617
9 p.
|
article
|
| 20 |
Modeling of MOSFET parasitic capacitances, and their impact on circuit performance
|
Mueller, Judith
|
|
2007
|
51 |
11-12 |
p. 1485-1493
9 p.
|
article
|
| 21 |
Monte-Carlo simulation of decananometric nMOSFETs: Multi-subband vs. 3D-electron gas with quantum corrections
|
Riolino, I.
|
|
2007
|
51 |
11-12 |
p. 1558-1564
7 p.
|
article
|
| 22 |
New TIT capacitor with ZrO2/Al2O3/ZrO2 dielectrics for 60nm and below DRAMs
|
Cho, Ho Jin
|
|
2007
|
51 |
11-12 |
p. 1529-1533
5 p.
|
article
|
| 23 |
One and two port piezoelectric higher order contour-mode MEMS resonators for mechanical signal processing
|
Piazza, Gianluca
|
|
2007
|
51 |
11-12 |
p. 1596-1608
13 p.
|
article
|
| 24 |
Power Trench MOSFETs with very low specific on-resistance for 25V applications
|
Goarin, Pierre
|
|
2007
|
51 |
11-12 |
p. 1589-1595
7 p.
|
article
|
| 25 |
Quantifying self-heating effects with scaling in globally strained Si MOSFETs
|
Agaiby, Rimoon
|
|
2007
|
51 |
11-12 |
p. 1473-1478
6 p.
|
article
|
| 26 |
Reduction of gate-to-channel tunneling current in FinFET structures
|
Rudenko, T.
|
|
2007
|
51 |
11-12 |
p. 1466-1472
7 p.
|
article
|
| 27 |
Research directions in beyond CMOS computing
|
Bourianoff, George I.
|
|
2007
|
51 |
11-12 |
p. 1426-1431
6 p.
|
article
|
| 28 |
Single-electron random-number generator (RNG) for highly secure ubiquitous computing applications
|
Uchida, Ken
|
|
2007
|
51 |
11-12 |
p. 1552-1557
6 p.
|
article
|
| 29 |
Solid-state electronics special issue foreword
|
Ionescu, Adrian M.
|
|
2007
|
51 |
11-12 |
p. 1425-
1 p.
|
article
|
| 30 |
Superior N- and P-MOSFET scalability using carbon co-implantation and spike annealing
|
Augendre, E.
|
|
2007
|
51 |
11-12 |
p. 1432-1436
5 p.
|
article
|
| 31 |
VDNROM: A novel four-physical-bits/cell vertical channel dual-nitride-trapping-layers ROM for high density flash memory applications
|
Zhou, Falong
|
|
2007
|
51 |
11-12 |
p. 1547-1551
5 p.
|
article
|
Journal description