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A high performance pMOSFET with two-step recessed SiGe-S/D structure for 32nm node and beyond |
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Titel: |
A high performance pMOSFET with two-step recessed SiGe-S/D structure for 32nm node and beyond |
Auteur: |
Yasutake, Nobuaki Azuma, Atsushi Ishida, Tatsuya Ohuchi, Kazuya Aoki, Nobutoshi Kusunoki, Naoki Mori, Shinji Mizushima, Ichiro Morooka, Tetsu Kawanaka, Shigeru Toyoshima, Yoshiaki |
Verschenen in: |
Solid-state electronics |
Paginering: |
Jaargang 51 (2007) nr. 11-12 pagina's 7 p. |
Jaar: |
2007 |
Inhoud: |
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Uitgever: |
Elsevier Ltd |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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