| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
AlGaN/GaN HEMTs: Experiment and simulation of DC characteristics
|
Faraclas, Elias W.
|
|
2006
|
50 |
6 |
p. 1051-1056
6 p.
|
article
|
| 2 |
Analysis and understanding of unique cryogenic phenomena in state-of-the-art SiGe HBTs
|
Liang, Qingqing
|
|
2006
|
50 |
6 |
p. 964-972
9 p.
|
article
|
| 3 |
Annealing of ion-implanted SiC by laser-pulse-exposure-generated shock-waves
|
Mulpuri, K.B.
|
|
2006
|
50 |
6 |
p. 1035-1040
6 p.
|
article
|
| 4 |
A novel tri-control gate surrounding gate transistor (TCG-SGT) nonvolatile memory cell for flash memory
|
Ohba, Takuya
|
|
2006
|
50 |
6 |
p. 924-928
5 p.
|
article
|
| 5 |
Bandwidth enhancement of Fabry-Perot quantum-well lasers by injection-locking
|
Jin, Xiaomin
|
|
2006
|
50 |
6 |
p. 1141-1149
9 p.
|
article
|
| 6 |
Breaking the theoretical limit of SiC unipolar power device – A simulation study
|
Yu, L.C.
|
|
2006
|
50 |
6 |
p. 1062-1072
11 p.
|
article
|
| 7 |
CMOS and post-CMOS on-chip microwave pulse power detectors
|
Jeon, Woochul
|
|
2006
|
50 |
6 |
p. 951-958
8 p.
|
article
|
| 8 |
CMOS integration of epitaxial Gd2O3 high-k gate dielectrics
|
Gottlob, H.D.B.
|
|
2006
|
50 |
6 |
p. 979-985
7 p.
|
article
|
| 9 |
CMOS reliability issues for emerging cryogenic Lunar electronics applications
|
Chen, Tianbing
|
|
2006
|
50 |
6 |
p. 959-963
5 p.
|
article
|
| 10 |
Current-transport properties of atomic-layer-deposited ultrathin Al2O3 on GaAs
|
Lin, H.C.
|
|
2006
|
50 |
6 |
p. 1012-1015
4 p.
|
article
|
| 11 |
Development of high frequency ZnO/SiO2/Si Love mode surface acoustic wave devices
|
Krishnamoorthy, S.
|
|
2006
|
50 |
6 |
p. 1113-1118
6 p.
|
article
|
| 12 |
Dramatic reduction of gate leakage current of ultrathin oxides through oxide structure modification
|
Chen, Zhi
|
|
2006
|
50 |
6 |
p. 1004-1011
8 p.
|
article
|
| 13 |
Efficient THz generation and frequency upconversion in GaP crystals
|
Ding, Yujie J.
|
|
2006
|
50 |
6 |
p. 1128-1136
9 p.
|
article
|
| 14 |
Electrical characteristic enhancement of metal–oxide–semiconductor devices by incorporating HfON buffer layer at HfTaSiON/Si interface
|
Cheng, Chin-Lung
|
|
2006
|
50 |
6 |
p. 1024-1029
6 p.
|
article
|
| 15 |
Foreword
|
Iliadis, Agis A.
|
|
2006
|
50 |
6 |
p. 901-
1 p.
|
article
|
| 16 |
Fully integrated 512Mb DRAMs with HSG-merged-AHO cylinder capacitor
|
Kim, Seong-Goo
|
|
2006
|
50 |
6 |
p. 1030-1034
5 p.
|
article
|
| 17 |
Gate electrode effects on low-frequency (1/f) noise in p-MOSFETs with high-κ dielectrics
|
Srinivasan, P.
|
|
2006
|
50 |
6 |
p. 992-998
7 p.
|
article
|
| 18 |
Gate line edge roughness amplitude and frequency variation effects on intra die MOS device characteristics
|
Hamadeh, Emad
|
|
2006
|
50 |
6 |
p. 1156-1163
8 p.
|
article
|
| 19 |
High breakdown voltage AlGaN/GaN MIS–HEMT with SiN and TiO2 gate insulator
|
Yagi, S.
|
|
2006
|
50 |
6 |
p. 1057-1061
5 p.
|
article
|
| 20 |
Highly reliable high-k gate dielectrics with gradual Hf-profile in the HfO2/SiO2 interface region
|
Iwamoto, Kunihiko
|
|
2006
|
50 |
6 |
p. 999-1003
5 p.
|
article
|
| 21 |
High performance InP/InAlAs/GaAsSb/InP double heterojunction bipolar transistors
|
Cho, S.W.
|
|
2006
|
50 |
6 |
p. 902-907
6 p.
|
article
|
| 22 |
High temperature characterization of SiC BJTs for power switching applications
|
Sheng, K.
|
|
2006
|
50 |
6 |
p. 1073-1079
7 p.
|
article
|
| 23 |
IFC - Editorial Board
|
|
|
2006
|
50 |
6 |
p. CO2-
1 p.
|
article
|
| 24 |
Influence of SOI-generated stress on BiCMOS performance
|
Johansson, Ted
|
|
2006
|
50 |
6 |
p. 935-942
8 p.
|
article
|
| 25 |
Integration of Si/SiGe HBT and Si-based RITD demonstrating controllable negative differential resistance for wireless applications
|
Chung, Sung-Yong
|
|
2006
|
50 |
6 |
p. 973-978
6 p.
|
article
|
| 26 |
Interface characterization of molecular-monolayer/SiO2 based molecular junctions
|
Richter, C.A.
|
|
2006
|
50 |
6 |
p. 1088-1096
9 p.
|
article
|
| 27 |
Large-signal modeling of SOI MESFETs
|
Balijepalli, A.
|
|
2006
|
50 |
6 |
p. 943-950
8 p.
|
article
|
| 28 |
Microstructural characterization of quantum dots with type-II band alignments
|
Sarney, W.L.
|
|
2006
|
50 |
6 |
p. 1124-1127
4 p.
|
article
|
| 29 |
Modeling observed capacitance–voltage hysteresis in metal–SiO2-thin film organic semiconductor devices
|
Niemann, Darrell
|
|
2006
|
50 |
6 |
p. 1097-1104
8 p.
|
article
|
| 30 |
Monitoring the self-heating in a high frequency GaN HFET
|
McAlister, S.P.
|
|
2006
|
50 |
6 |
p. 1046-1050
5 p.
|
article
|
| 31 |
25-nm programmable virtual source/drain MOSFETs using a twin SONOS memory structure
|
Choi, Woo Young
|
|
2006
|
50 |
6 |
p. 914-919
6 p.
|
article
|
| 32 |
Novel dielectrics for gate oxides and surface passivation on GaN
|
Gila, B.P.
|
|
2006
|
50 |
6 |
p. 1016-1023
8 p.
|
article
|
| 33 |
Novel reconfigurable semiconductor photonic crystal-MEMS device
|
Zhou, Weimin
|
|
2006
|
50 |
6 |
p. 908-913
6 p.
|
article
|
| 34 |
Physical and electrical characteristics of high-κ gate dielectric Hf(1−x)La x O y
|
Wang, X.P.
|
|
2006
|
50 |
6 |
p. 986-991
6 p.
|
article
|
| 35 |
Polysilicon TFT circuits on flexible stainless steel foils
|
Troccoli, Matias N.
|
|
2006
|
50 |
6 |
p. 1080-1087
8 p.
|
article
|
| 36 |
Quantum mechanical modeling of MOSFET gate leakage for high-k gate dielectrics
|
Wu, Huixian
|
|
2006
|
50 |
6 |
p. 1164-1169
6 p.
|
article
|
| 37 |
Role of low O2 pressure and growth temperature on electrical transport of PLD grown ZnO thin films on Si substrates
|
Pandis, Ch.
|
|
2006
|
50 |
6 |
p. 1119-1123
5 p.
|
article
|
| 38 |
Room temperature lasing of GaAs quantum wire vertical-cavity surface-emitting lasers grown on (775)B GaAs substrates by molecular beam epitaxy
|
Higuchi, Y.
|
|
2006
|
50 |
6 |
p. 1137-1140
4 p.
|
article
|
| 39 |
Schottky barrier height in GaN/AlGaN heterostructures
|
Anwar, A.F.M.
|
|
2006
|
50 |
6 |
p. 1041-1045
5 p.
|
article
|
| 40 |
Structural and rectifying junction properties of self-assembled ZnO nanoparticles in polystyrene diblock copolymers on (100)Si substrates
|
Ali, H.A.
|
|
2006
|
50 |
6 |
p. 1105-1112
8 p.
|
article
|
| 41 |
Study of leakage-induced photon emission processes in sub-90nm CMOS devices
|
Weizman, Y.
|
|
2006
|
50 |
6 |
p. 920-923
4 p.
|
article
|
| 42 |
Two-dimensional quantum mechanical modeling for multiple-channel FET
|
Kim, Joong-Sik
|
|
2006
|
50 |
6 |
p. 1150-1155
6 p.
|
article
|
| 43 |
Worst case stress conditions for hot carrier induced degradation of p-channel SOI MOSFETs
|
Ioannou, D.P.
|
|
2006
|
50 |
6 |
p. 929-934
6 p.
|
article
|
Journal description