| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
An effective model for analysing tunneling gate leakage currents through ultrathin oxides and high-k gate stacks from Si inversion layers
|
Govoreanu, Bogdan
|
|
2004
|
48 |
4 |
p. 617-625
9 p.
|
article
|
| 2 |
Atomic-scale modeling of double-gate MOSFETs using a tight-binding Green’s function formalism
|
Bescond, M.
|
|
2004
|
48 |
4 |
p. 567-574
8 p.
|
article
|
| 3 |
CMOS downsizing toward sub-10 nm
|
Iwai, Hiroshi
|
|
2004
|
48 |
4 |
p. 497-503
7 p.
|
article
|
| 4 |
Comparative analysis of the RF and noise performance of bulk and single-gate ultra-thin SOI MOSFETs by numerical simulation
|
Eminente, Simone
|
|
2004
|
48 |
4 |
p. 543-549
7 p.
|
article
|
| 5 |
Coupling effects and channels separation in FinFETs
|
Daugé, F.
|
|
2004
|
48 |
4 |
p. 535-542
8 p.
|
article
|
| 6 |
DC and AC MOS transistor modelling in presence of high gate leakage and experimental validation
|
Gilibert, F.
|
|
2004
|
48 |
4 |
p. 597-608
12 p.
|
article
|
| 7 |
Development of an analytical mobility model for the simulation of ultra-thin single- and double-gate SOI MOSFETs
|
Alessandrini, Marco
|
|
2004
|
48 |
4 |
p. 589-595
7 p.
|
article
|
| 8 |
Electrical analysis of external mechanical stress effects in short channel MOSFETs on (001) silicon
|
Gallon, C.
|
|
2004
|
48 |
4 |
p. 561-566
6 p.
|
article
|
| 9 |
Foreword
|
Selmi, Luca
|
|
2004
|
48 |
4 |
p. 495-496
2 p.
|
article
|
| 10 |
Full-band approaches to the electronic properties of nanometer-scale MOS structures
|
Sacconi, Fabio
|
|
2004
|
48 |
4 |
p. 575-580
6 p.
|
article
|
| 11 |
Impact of technology parameters on device performance of UTB-SOI CMOS
|
Schulz, T.
|
|
2004
|
48 |
4 |
p. 521-527
7 p.
|
article
|
| 12 |
Modelling and simulation challenges for nanoscale MOSFETs in the ballistic limit
|
Curatola, G.
|
|
2004
|
48 |
4 |
p. 581-587
7 p.
|
article
|
| 13 |
On the extraction of the channel current in permeable gate oxide MOSFETs
|
Palestri, P.
|
|
2004
|
48 |
4 |
p. 609-615
7 p.
|
article
|
| 14 |
Performance evaluation of ultra-thin gate-oxide CMOS circuits
|
Marras, Alessandro
|
|
2004
|
48 |
4 |
p. 551-559
9 p.
|
article
|
| 15 |
Single, double and surround gate vertical MOSFETs with reduced parasitic capacitance
|
Gili, E.
|
|
2004
|
48 |
4 |
p. 511-519
9 p.
|
article
|
| 16 |
Subthreshold behavior of triple-gate MOSFETs on SOI material
|
Lemme, M.C.
|
|
2004
|
48 |
4 |
p. 529-534
6 p.
|
article
|
| 17 |
Towards the limits of conventional MOSFETs: case of sub 30 nm NMOS devices
|
Bertrand, G.
|
|
2004
|
48 |
4 |
p. 505-509
5 p.
|
article
|
Journal description