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Journal description
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Details for article 1 of 17 found articles
| Title: |
An effective model for analysing tunneling gate leakage currents through ultrathin oxides and high-k gate stacks from Si inversion layers |
| Author: |
Govoreanu, Bogdan Blomme, Pieter Henson, Kirklen Van Houdt, Jan De Meyer, Kristin |
| Appeared in: |
Solid-state electronics |
| Paging: | Volume 48 (2004) nr. 4 pages 9 p. |
| Year: |
2004 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 1 of 17 found articles
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