| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Ammonia-sensing characteristics of Pt and SiO2 doped SnO2 materials
|
Wang, Yu-De
|
|
2001
|
45 |
2 |
p. 347-350
4 p.
|
artikel
|
| 2 |
Analytical approximation for the MOSFET surface potential
|
Chen, T.L.
|
|
2001
|
45 |
2 |
p. 335-339
5 p.
|
artikel
|
| 3 |
An asymmetric Si/Si1−x Ge x channel vertical p-type metal-oxide-semiconductor field-effect transistor
|
Chen, Xiangdong
|
|
2001
|
45 |
2 |
p. 281-285
5 p.
|
artikel
|
| 4 |
A new method for evaluating illuminated solar cell parameters
|
Chegaar, M
|
|
2001
|
45 |
2 |
p. 293-296
4 p.
|
artikel
|
| 5 |
An improved physics-based 1/f noise model for deep sub-micron MOSFETs
|
Wang, Fang
|
|
2001
|
45 |
2 |
p. 351-357
7 p.
|
artikel
|
| 6 |
A novel programming technique for highly scalable and disturbance immune flash EEPROM
|
Huang, Kuo-Ching
|
|
2001
|
45 |
2 |
p. 297-301
5 p.
|
artikel
|
| 7 |
A three-dimensional nonlinear analysis of electromigration-induced resistance change and Joule heating in microelectronic interconnects
|
Kang, S.H.
|
|
2001
|
45 |
2 |
p. 341-346
6 p.
|
artikel
|
| 8 |
Characteristics and comparison of In0.49Ga0.51P/InGaAs single and double delta-doped pseudomorphic high electron mobility transistors
|
Lin, Kun-Wei
|
|
2001
|
45 |
2 |
p. 309-314
6 p.
|
artikel
|
| 9 |
Comprehensive analytical physical model of quantized inversion layer in MOS structure
|
Ma, Yutao
|
|
2001
|
45 |
2 |
p. 267-273
7 p.
|
artikel
|
| 10 |
Deep centers spectra and scanning electron microscope studies of p-GaN films prepared by metallorganic chemical vapor deposition on sapphire
|
Polyakov, A.Y.
|
|
2001
|
45 |
2 |
p. 255-259
5 p.
|
artikel
|
| 11 |
Determining non-quasi-static small-signal equivalent circuit of a RF silicon MOSFET
|
Lee, Seonghearn
|
|
2001
|
45 |
2 |
p. 359-364
6 p.
|
artikel
|
| 12 |
Effect of exponentially distributed deep levels on the current and capacitance of a MIS diode
|
Sanyal, S.
|
|
2001
|
45 |
2 |
p. 315-324
10 p.
|
artikel
|
| 13 |
Effects of N2 or Ar plasma exposure on GaAs/AlGaAs heterojunction bipolar transistors
|
Hsu, C.H
|
|
2001
|
45 |
2 |
p. 275-279
5 p.
|
artikel
|
| 14 |
Experimental studies of frequency response and related properties of small-signal bipolar junction transistor amplifiers
|
Motayed, A.
|
|
2001
|
45 |
2 |
p. 325-333
9 p.
|
artikel
|
| 15 |
Extraction of coupling ratios for Fowler–Nordheim programming conditions
|
Duane, Russell
|
|
2001
|
45 |
2 |
p. 235-242
8 p.
|
artikel
|
| 16 |
High frequency thermal noise modelling of short-channel MOSFET's
|
Signoracci, L.
|
|
2001
|
45 |
2 |
p. 205-221
17 p.
|
artikel
|
| 17 |
Latchup resistant Ge1−x Si x /Si heterostructure CMOS design for VLSI application
|
Motayed, Abhishek
|
|
2001
|
45 |
2 |
p. 287-291
5 p.
|
artikel
|
| 18 |
Leakage current of offset gate p- and n-channel excimer laser annealed polycrystalline silicon thin-film transistors
|
Dimitriadis, C.A.
|
|
2001
|
45 |
2 |
p. 365-368
4 p.
|
artikel
|
| 19 |
Modeling of complete suppression of boron out-diffusion in Si1−x Ge x by carbon incorporation
|
Rajendran, K.
|
|
2001
|
45 |
2 |
p. 229-233
5 p.
|
artikel
|
| 20 |
Modeling of direct tunneling and surface roughness effects on C–V characteristics of ultra-thin gate MOS capacitors
|
Zhang, J.-L.
|
|
2001
|
45 |
2 |
p. 373-377
5 p.
|
artikel
|
| 21 |
Modeling real junctions by a series combination of two ideal diodes with parallel resistance and its parameter extraction
|
Ortiz-Conde, A.
|
|
2001
|
45 |
2 |
p. 223-228
6 p.
|
artikel
|
| 22 |
Self-aligned process for emitter- and base-regrowth GaN HBTs and BJTs
|
Lee, K.P.
|
|
2001
|
45 |
2 |
p. 243-247
5 p.
|
artikel
|
| 23 |
Studies of deep centers in high-resistivity p-GaN films doped with Zn and grown on SiC by hydride vapor phase epitaxy
|
Polyakov, A.Y.
|
|
2001
|
45 |
2 |
p. 249-253
5 p.
|
artikel
|
| 24 |
Studies of defects in Mg doped p-GaN films grown by hydride vapor phase epitaxy on SiC substrates
|
Polyakov, A.Y.
|
|
2001
|
45 |
2 |
p. 261-265
5 p.
|
artikel
|
| 25 |
Theoretical analysis of distributions of the peak field and breakdown voltage along the metallurgical junction edge based on an elliptic cylindrical solution
|
He, Jin
|
|
2001
|
45 |
2 |
p. 303-307
5 p.
|
artikel
|
| 26 |
Tuned performance of small-signal BJT Darlington pair
|
Motayed, Abhishek
|
|
2001
|
45 |
2 |
p. 369-371
3 p.
|
artikel
|
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