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                             26 results found
no title author magazine year volume issue page(s) type
1 Ammonia-sensing characteristics of Pt and SiO2 doped SnO2 materials Wang, Yu-De
 2001
 45 2 p. 347-350
4 p.
 article
2 Analytical approximation for the MOSFET surface potential Chen, T.L.
 2001
 45 2 p. 335-339
5 p.
 article
3 An asymmetric Si/Si1−x Ge x channel vertical p-type metal-oxide-semiconductor field-effect transistor Chen, Xiangdong
 2001
 45 2 p. 281-285
5 p.
 article
4 A new method for evaluating illuminated solar cell parameters Chegaar, M
 2001
 45 2 p. 293-296
4 p.
 article
5 An improved physics-based 1/f noise model for deep sub-micron MOSFETs Wang, Fang
 2001
 45 2 p. 351-357
7 p.
 article
6 A novel programming technique for highly scalable and disturbance immune flash EEPROM Huang, Kuo-Ching
 2001
 45 2 p. 297-301
5 p.
 article
7 A three-dimensional nonlinear analysis of electromigration-induced resistance change and Joule heating in microelectronic interconnects Kang, S.H.
 2001
 45 2 p. 341-346
6 p.
 article
8 Characteristics and comparison of In0.49Ga0.51P/InGaAs single and double delta-doped pseudomorphic high electron mobility transistors Lin, Kun-Wei
 2001
 45 2 p. 309-314
6 p.
 article
9 Comprehensive analytical physical model of quantized inversion layer in MOS structure Ma, Yutao
 2001
 45 2 p. 267-273
7 p.
 article
10 Deep centers spectra and scanning electron microscope studies of p-GaN films prepared by metallorganic chemical vapor deposition on sapphire Polyakov, A.Y.
 2001
 45 2 p. 255-259
5 p.
 article
11 Determining non-quasi-static small-signal equivalent circuit of a RF silicon MOSFET Lee, Seonghearn
 2001
 45 2 p. 359-364
6 p.
 article
12 Effect of exponentially distributed deep levels on the current and capacitance of a MIS diode Sanyal, S.
 2001
 45 2 p. 315-324
10 p.
 article
13 Effects of N2 or Ar plasma exposure on GaAs/AlGaAs heterojunction bipolar transistors Hsu, C.H
 2001
 45 2 p. 275-279
5 p.
 article
14 Experimental studies of frequency response and related properties of small-signal bipolar junction transistor amplifiers Motayed, A.
 2001
 45 2 p. 325-333
9 p.
 article
15 Extraction of coupling ratios for Fowler–Nordheim programming conditions Duane, Russell
 2001
 45 2 p. 235-242
8 p.
 article
16 High frequency thermal noise modelling of short-channel MOSFET's Signoracci, L.
 2001
 45 2 p. 205-221
17 p.
 article
17 Latchup resistant Ge1−x Si x /Si heterostructure CMOS design for VLSI application Motayed, Abhishek
 2001
 45 2 p. 287-291
5 p.
 article
18 Leakage current of offset gate p- and n-channel excimer laser annealed polycrystalline silicon thin-film transistors Dimitriadis, C.A.
 2001
 45 2 p. 365-368
4 p.
 article
19 Modeling of complete suppression of boron out-diffusion in Si1−x Ge x by carbon incorporation Rajendran, K.
 2001
 45 2 p. 229-233
5 p.
 article
20 Modeling of direct tunneling and surface roughness effects on C–V characteristics of ultra-thin gate MOS capacitors Zhang, J.-L.
 2001
 45 2 p. 373-377
5 p.
 article
21 Modeling real junctions by a series combination of two ideal diodes with parallel resistance and its parameter extraction Ortiz-Conde, A.
 2001
 45 2 p. 223-228
6 p.
 article
22 Self-aligned process for emitter- and base-regrowth GaN HBTs and BJTs Lee, K.P.
 2001
 45 2 p. 243-247
5 p.
 article
23 Studies of deep centers in high-resistivity p-GaN films doped with Zn and grown on SiC by hydride vapor phase epitaxy Polyakov, A.Y.
 2001
 45 2 p. 249-253
5 p.
 article
24 Studies of defects in Mg doped p-GaN films grown by hydride vapor phase epitaxy on SiC substrates Polyakov, A.Y.
 2001
 45 2 p. 261-265
5 p.
 article
25 Theoretical analysis of distributions of the peak field and breakdown voltage along the metallurgical junction edge based on an elliptic cylindrical solution He, Jin
 2001
 45 2 p. 303-307
5 p.
 article
26 Tuned performance of small-signal BJT Darlington pair Motayed, Abhishek
 2001
 45 2 p. 369-371
3 p.
 article
                             26 results found
 
 Koninklijke Bibliotheek - National Library of the Netherlands