| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An investigation into the performance of diffusion barrier materials against copper diffusion using metal-oxide-semiconductor (MOS) capacitor structures
|
Len, Vee S.C
|
|
1999
|
43 |
6 |
p. 1045-1049
5 p.
|
artikel
|
| 2 |
CdS doped-MOR type zeolite characterization
|
Villavicencio Garcı́a, H
|
|
1999
|
43 |
6 |
p. 1171-1175
5 p.
|
artikel
|
| 3 |
Characteristics of sputter-deposited TiN, ZrB2 and W2B diffusion barriers for advanced metallizations to GaAs
|
Guziewicz, M
|
|
1999
|
43 |
6 |
p. 1055-1061
7 p.
|
artikel
|
| 4 |
Cobalt silicide thermal stability: from blanket thin film to submicrometer lines
|
Alberti, A.
|
|
1999
|
43 |
6 |
p. 1039-1044
6 p.
|
artikel
|
| 5 |
CoSi2 buffer films on single crystal silicon with Co ions pre-implanted surface layer for YBCO/CoSi2/Si heterostructures
|
Belousov, I.
|
|
1999
|
43 |
6 |
p. 1101-1106
6 p.
|
artikel
|
| 6 |
Coulomb blockade: Poisson versus Pauli in a silicon quantum box
|
Palun, L
|
|
1999
|
43 |
6 |
p. 1147-1151
5 p.
|
artikel
|
| 7 |
Determination of the spectral behaviour of porous silicon based photodiodes
|
Martı́n-Palma, R.J
|
|
1999
|
43 |
6 |
p. 1153-1157
5 p.
|
artikel
|
| 8 |
Editorial
|
|
|
1999
|
43 |
6 |
p. 1001-1002
2 p.
|
artikel
|
| 9 |
Evaluation and localization of oxygen in thin TiN layers obtained by RTLPCVD from TiCl4–NH3–H2
|
Imhoff, L.
|
|
1999
|
43 |
6 |
p. 1025-1029
5 p.
|
artikel
|
| 10 |
Excimer lamp-induced decomposition of platinum acetylacetonate films for electroless copper plating
|
Zhang, Jun-Ying
|
|
1999
|
43 |
6 |
p. 1107-1111
5 p.
|
artikel
|
| 11 |
Factors which determine the orientation of CVD Al films grown on TiN
|
Avinun, M.
|
|
1999
|
43 |
6 |
p. 1011-1014
4 p.
|
artikel
|
| 12 |
Influence of carbon-containing contamination in the luminescence of porous silicon
|
Guerrero-Lemus, R
|
|
1999
|
43 |
6 |
p. 1165-1169
5 p.
|
artikel
|
| 13 |
Interconnect technology trend for microelectronics
|
Liu, Ruichen
|
|
1999
|
43 |
6 |
p. 1003-1009
7 p.
|
artikel
|
| 14 |
Nanometer patterning of epitaxial CoSi2/Si(100) by local oxidation
|
Zhao, Q.T
|
|
1999
|
43 |
6 |
p. 1091-1094
4 p.
|
artikel
|
| 15 |
Nanometer scale lithography on silicon, titanium and PMMA resist using scanning probe microscopy
|
Dubois, Emmanuel
|
|
1999
|
43 |
6 |
p. 1085-1089
5 p.
|
artikel
|
| 16 |
Observation of current polarity effect in stressing as-formed sub-micron Al–Si–Cu/TiW/TiSi2 contacts
|
Chen, Li-Zen
|
|
1999
|
43 |
6 |
p. 1031-1037
7 p.
|
artikel
|
| 17 |
Oxidation of rf plasma: hydrogenated crystalline Si
|
Alexandrova, S
|
|
1999
|
43 |
6 |
p. 1113-1116
4 p.
|
artikel
|
| 18 |
Polymer issues in nanoimprinting technique
|
Gottschalch, Frank
|
|
1999
|
43 |
6 |
p. 1079-1083
5 p.
|
artikel
|
| 19 |
Porous silicon—mechanisms of growth and applications
|
Parkhutik, V.
|
|
1999
|
43 |
6 |
p. 1121-1141
21 p.
|
artikel
|
| 20 |
Processing and characterisation of sol–gel deposited Ta2O5 and TiO2–Ta2O5 dielectric thin films
|
Cappellani, A
|
|
1999
|
43 |
6 |
p. 1095-1099
5 p.
|
artikel
|
| 21 |
Silicide reaction of Co with Si0.999C0.001
|
Teichert, S
|
|
1999
|
43 |
6 |
p. 1051-1054
4 p.
|
artikel
|
| 22 |
Sputtered tungsten films on polyimide, an application for X-ray masks
|
Ligot, J
|
|
1999
|
43 |
6 |
p. 1075-1078
4 p.
|
artikel
|
| 23 |
Study of Cu contamination during copper integration for subquarter micron technology
|
Motte, P
|
|
1999
|
43 |
6 |
p. 1015-1018
4 p.
|
artikel
|
| 24 |
TEM studies of the microstructure evolution in plasma treated CVD TiN thin films used as diffusion barriers
|
Ikeda, S
|
|
1999
|
43 |
6 |
p. 1063-1068
6 p.
|
artikel
|
| 25 |
Texturing, surface energetics and morphology in the C49–C54 transformation of TiSi2
|
Miglio, Leo
|
|
1999
|
43 |
6 |
p. 1069-1074
6 p.
|
artikel
|
| 26 |
The formation of narrow nanocluster bands in Ge-implanted SiO2-layers
|
von Borany, J
|
|
1999
|
43 |
6 |
p. 1159-1163
5 p.
|
artikel
|
| 27 |
The interaction of metals and barrier layers with fluorinated silicon oxides
|
Kim, Sarah E.
|
|
1999
|
43 |
6 |
p. 1019-1023
5 p.
|
artikel
|
| 28 |
Thermal behavior of residual strain in silicon-on-insulator bonded wafer and effects on electron mobility
|
Iida, Tsutomu
|
|
1999
|
43 |
6 |
p. 1117-1120
4 p.
|
artikel
|
| 29 |
Two-dimensional nanowire array formation on Si substrate using self-organized nanoholes of anodically oxidized aluminum
|
Shingubara, S
|
|
1999
|
43 |
6 |
p. 1143-1146
4 p.
|
artikel
|
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