| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Aluminum multiple implantations in 6H–SiC at 300 K
|
Ottaviani, Laurent
|
|
1999
|
43 |
12 |
p. 2215-2223
9 p.
|
artikel
|
| 2 |
Analysis of transition region and accumulation layer effect in the subthreshold slope in SOI nMOSFETs and their influences on the interface trap density extraction
|
Sonnenberg, Victor
|
|
1999
|
43 |
12 |
p. 2191-2199
9 p.
|
artikel
|
| 3 |
An explicit rederivation of Reimbold's 1/f trapping noise theory in Si nMOSFETs at weak inversion
|
Park, Chan Hyeong
|
|
1999
|
43 |
12 |
p. 2111-2113
3 p.
|
artikel
|
| 4 |
A practical device scheme for designing the dopant profile of source/drain extension region in sub-quarter-micron p-MOSFET's
|
Juang, M.H
|
|
1999
|
43 |
12 |
p. 2209-2213
5 p.
|
artikel
|
| 5 |
Breakdown characteristics of MOVPE grown Si-doped GaAs Schottky diodes
|
Hudait, M.K
|
|
1999
|
43 |
12 |
p. 2135-2139
5 p.
|
artikel
|
| 6 |
Coupling coefficients in double quantum well systems
|
Velasquez, Rober
|
|
1999
|
43 |
12 |
p. 2155-2162
8 p.
|
artikel
|
| 7 |
Effect of the Ge-molefraction on the subthreshold slope and leakage current of vertical Si/Si1−x Ge x MOSFETs
|
Collaert, N.
|
|
1999
|
43 |
12 |
p. 2173-2180
8 p.
|
artikel
|
| 8 |
Effect of trap density on the dielectric response of varistor ceramics
|
Garcia-Belmonte, G.
|
|
1999
|
43 |
12 |
p. 2123-2127
5 p.
|
artikel
|
| 9 |
Flicker noise by random walk of electrons at the interface in nonideal Schottky diodes
|
Lee, J.I.
|
|
1999
|
43 |
12 |
p. 2185-2189
5 p.
|
artikel
|
| 10 |
Four-electron quantum dots in magnetic fields
|
Xie, Wenfang
|
|
1999
|
43 |
12 |
p. 2115-2122
8 p.
|
artikel
|
| 11 |
Index
|
|
|
1999
|
43 |
12 |
p. I-V
nvt p.
|
artikel
|
| 12 |
Index
|
|
|
1999
|
43 |
12 |
p. VII-
1 p.
|
artikel
|
| 13 |
Large signal modelling of GaAs/AlGaAs HBT's with separation of the surface recombination current
|
Bengtsson, Lars
|
|
1999
|
43 |
12 |
p. 2163-2172
10 p.
|
artikel
|
| 14 |
Light-emitting p+nn+-heterodiode with additional heterojunction in the n-base
|
Gribnikov, Z.S.
|
|
1999
|
43 |
12 |
p. 2201-2207
7 p.
|
artikel
|
| 15 |
MOCVD growth of strained multiple quantum well structure for 1.3 μm InAsP/InP laser diodes
|
Lee, Chong-Yi
|
|
1999
|
43 |
12 |
p. 2141-2146
6 p.
|
artikel
|
| 16 |
Modeling of drain leakage current in SOI pMOSFETs
|
Jang, Sheng-Lyang
|
|
1999
|
43 |
12 |
p. 2147-2154
8 p.
|
artikel
|
| 17 |
On 1/fγ noise in semiconductor devices
|
Lee, J.I
|
|
1999
|
43 |
12 |
p. 2181-2183
3 p.
|
artikel
|
| 18 |
On the high order numerical calculation schemes for the Wigner transport equation
|
Kim, Kyoung-Youm
|
|
1999
|
43 |
12 |
p. 2243-2245
3 p.
|
artikel
|
| 19 |
Procedure for determining diode parameters at very low forward voltage
|
Ranuárez, J.C.
|
|
1999
|
43 |
12 |
p. 2129-2133
5 p.
|
artikel
|
| 20 |
Selective deposition of a thin copper film for metallization on silicon by the chemical bath process
|
Dhingra, Sunil
|
|
1999
|
43 |
12 |
p. 2231-2234
4 p.
|
artikel
|
| 21 |
Temporal responses of a symmetric self-electro-optic effect device based on Wannier–Stark localization
|
Kawashima, Kenji
|
|
1999
|
43 |
12 |
p. 2103-2109
7 p.
|
artikel
|
| 22 |
The impact of bandgap offset distribution between conduction and valence bands in Si-based graded bandgap HBT's
|
Niu, Guofu
|
|
1999
|
43 |
12 |
p. 2225-2230
6 p.
|
artikel
|
| 23 |
The separation of generation lifetimes of Si and SiGe using capacitance-transient measurements on MOS capacitors formed by plasma anodisation of Si:Si0.9Ge0.1:Si substrates
|
Riley, L.S
|
|
1999
|
43 |
12 |
p. 2247-2250
4 p.
|
artikel
|
| 24 |
Transverse probe optical lifetime measurement as a tool for in-line characterization of the fabrication process of a silicon solar cell
|
Irace, A
|
|
1999
|
43 |
12 |
p. 2235-2242
8 p.
|
artikel
|
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