| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Al-free InP-based high electron mobility transistors: Design, fabrication and performance
|
Mesquida Küsters, A
|
|
1997
|
41 |
8 |
p. 1159-1170
12 p.
|
artikel
|
| 2 |
Analysis of the inner collection efficiency in hybrid silicon solar cells
|
Nubile, P
|
|
1997
|
41 |
8 |
p. 1202-1206
5 p.
|
artikel
|
| 3 |
Analytical modelling of BJT neutral base region under variable injection conditions
|
Bardés, D
|
|
1997
|
41 |
8 |
p. 1177-1180
4 p.
|
artikel
|
| 4 |
Analytical relations for the base transit time and collector current in BJTs and HBTs
|
Rinaldi, N
|
|
1997
|
41 |
8 |
p. 1153-1158
6 p.
|
artikel
|
| 5 |
An on-state analytical model for the Trench Insulated Gate Bipolar Transistor (TIGBT)
|
Udrea, F
|
|
1997
|
41 |
8 |
p. 1111-1118
8 p.
|
artikel
|
| 6 |
Base contact resistance limits to lateral scaling of fully self-aligned double mesa SiGe-HBTs
|
Behammer, D
|
|
1997
|
41 |
8 |
p. 1105-1110
6 p.
|
artikel
|
| 7 |
Boron out diffusion from Si substrates in various ambients
|
Suzuki, Kunihiro
|
|
1997
|
41 |
8 |
p. 1095-1097
3 p.
|
artikel
|
| 8 |
Conduction mechanism in a metal-insulator-semiconductor structure with a low temperature GaAs insulating layer
|
Arifin, P
|
|
1997
|
41 |
8 |
p. 1075-1078
4 p.
|
artikel
|
| 9 |
Correlation of implantation defects with interface recombination velocities and carrier lifetimes in annealed SIMOX SOI materials by using a contactless optical modulation technique
|
Chang, Y.-S
|
|
1997
|
41 |
8 |
p. 1189-1198
10 p.
|
artikel
|
| 10 |
Donor avalanche breakdown field in n-GaAs: Effect of concentration and lattice temperature
|
Dargys, A
|
|
1997
|
41 |
8 |
p. 1185-1188
4 p.
|
artikel
|
| 11 |
Gate-oxide thickness dependence of LDD MOSFET parameters
|
Hassan, Md.R
|
|
1997
|
41 |
8 |
p. 1199-1201
3 p.
|
artikel
|
| 12 |
Hot-carrier reliability of non-degenerately doped tungsten polycide gate buried-channel p-MOSFETs
|
Lou, C.L
|
|
1997
|
41 |
8 |
p. 1171-1176
6 p.
|
artikel
|
| 13 |
Measurement and modeling of the anomalous dynamic response of high resistivity diodes at cryogenic temperatures
|
Misiakos, K
|
|
1997
|
41 |
8 |
p. 1099-1103
5 p.
|
artikel
|
| 14 |
Modeling and analysis of heterostructure-emitter and heterostructure-base transistors (HEHBTs)
|
Tsai, J.-H
|
|
1997
|
41 |
8 |
p. 1089-1094
6 p.
|
artikel
|
| 15 |
Nonparabolic multivalley balance-equation approach to high-field electron transport in GaAs
|
Cao, J.C
|
|
1997
|
41 |
8 |
p. 1181-1183
3 p.
|
artikel
|
| 16 |
Output characteristics of the Dual Channel EST
|
Sridhar, S
|
|
1997
|
41 |
8 |
p. 1133-1138
6 p.
|
artikel
|
| 17 |
Performance dependence of large-area silicon p-i-n photodetectors upon epitaxial thickness
|
Seto, M
|
|
1997
|
41 |
8 |
p. 1083-1087
5 p.
|
artikel
|
| 18 |
Physical models for strained and relaxed GaInAs alloys: Band structure and low-field transport
|
Köpf, Ch
|
|
1997
|
41 |
8 |
p. 1139-1152
14 p.
|
artikel
|
| 19 |
Self consistent fitting method for defect analysis by low-frequency noise measurements in reverse biased p-n junctions
|
Jevtić, M.M
|
|
1997
|
41 |
8 |
p. 1127-1131
5 p.
|
artikel
|
| 20 |
Using TLM principles to determine MOSFET contact and parasitic resistance
|
Reeves, Geoffrey K
|
|
1997
|
41 |
8 |
p. 1067-1074
8 p.
|
artikel
|
| 21 |
Velocity overshoot of electrons and holes in Si inversion layers
|
Sinitsky, D
|
|
1997
|
41 |
8 |
p. 1119-1125
7 p.
|
artikel
|
| 22 |
V-Grooved GaAs AlGaAs quantum wire laser array confined by junction-isolation stripes
|
Kim, T.G
|
|
1997
|
41 |
8 |
p. 1079-1081
3 p.
|
artikel
|
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