| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comparative study of the transient response of GTO thyristors
|
Garrett, J.M.
|
|
1996
|
39 |
1 |
p. 137-146
10 p.
|
artikel
|
| 2 |
Analysis of abrupt emitter-base heterojunctions by multi-flux method and self-consistent solution of Schrödinger and Poisson equations
|
Özaydin, Melih
|
|
1996
|
39 |
1 |
p. 53-57
5 p.
|
artikel
|
| 3 |
Analytical approach to breakdown voltages in thin-film SOI power MOSFETs
|
Kim, Il-Jung
|
|
1996
|
39 |
1 |
p. 95-100
6 p.
|
artikel
|
| 4 |
Analytical relations pertaining to collector current density and base transit time in bipolar transistors
|
Ma, Pingxi
|
|
1996
|
39 |
1 |
p. 173-175
3 p.
|
artikel
|
| 5 |
An analytical expression for base transit time in an exponentially doped base bipolar transistor
|
Jahan, M.M.
|
|
1996
|
39 |
1 |
p. 133-136
4 p.
|
artikel
|
| 6 |
A silicon-on-insulator quantum wire
|
Colinge, J.P.
|
|
1996
|
39 |
1 |
p. 49-51
3 p.
|
artikel
|
| 7 |
A three-dimensional MOSFET solver implementing the fixed point iteration technique
|
Madabhushi, Rajiv
|
|
1996
|
39 |
1 |
p. 147-157
11 p.
|
artikel
|
| 8 |
Characteristics of metal-insulated-semiconductor (MIS) like In 0.2 Ga 0.8 As GaAs doped-channel structure
|
Laih, Lih-Wen
|
|
1996
|
39 |
1 |
p. 15-20
6 p.
|
artikel
|
| 9 |
Comment on “Analysis of I-V measurements on CrSi2Si Schottky structures in a wide temperature range”
|
Horváth, Zs.J.
|
|
1996
|
39 |
1 |
p. 176-178
3 p.
|
artikel
|
| 10 |
Cryogenic operation of power bipolar transistors
|
Singh, Ranbir
|
|
1996
|
39 |
1 |
p. 101-108
8 p.
|
artikel
|
| 11 |
Editorial Board
|
|
|
1996
|
39 |
1 |
p. IFC-
1 p.
|
artikel
|
| 12 |
Effect of series resistance on the forward current-voltage characteristics of Schottky diodes in the presence of interfacial layer
|
Ayyildiz, Enise
|
|
1996
|
39 |
1 |
p. 83-87
5 p.
|
artikel
|
| 13 |
Effects of high-level free-carrier injection on the base transit time of bipolar junction transistors
|
Yue, Y.
|
|
1996
|
39 |
1 |
p. 27-31
5 p.
|
artikel
|
| 14 |
1 f noise and dark current components in HgCdTe MIS infrared detectors
|
He, Wenmu
|
|
1996
|
39 |
1 |
p. 127-132
6 p.
|
artikel
|
| 15 |
High sensitivity 2.5 μm photodiodes with metastable GaInAsSb absorbing layer
|
Mébarki, M.
|
|
1996
|
39 |
1 |
p. 39-41
3 p.
|
artikel
|
| 16 |
Modeling of hole confinement gate voltage range for SiGe channel p-MOSFETs
|
Niu, G.F.
|
|
1996
|
39 |
1 |
p. 69-73
5 p.
|
artikel
|
| 17 |
Modeling of hot-carrier-stressed characteristics of nMOSFETs
|
Chen, Young-Shying
|
|
1996
|
39 |
1 |
p. 75-81
7 p.
|
artikel
|
| 18 |
New current-defined threshold voltage model from 2D potential distribution calculations in MOSFETs
|
Biesemans, Serge
|
|
1996
|
39 |
1 |
p. 43-48
6 p.
|
artikel
|
| 19 |
On the turn-off behaviour of the NPT-IGBT under clamped inductive loads
|
Feiler, W.
|
|
1996
|
39 |
1 |
p. 59-67
9 p.
|
artikel
|
| 20 |
Plasma-induced damage and hydrogenation of Al x Ga1−x P
|
Lee, J.W.
|
|
1996
|
39 |
1 |
p. 1-5
5 p.
|
artikel
|
| 21 |
Representation of two-dimensional ion implantation rest distributions by Pearson distribution curves for silicon technology
|
Bowyer, M.D.J.
|
|
1996
|
39 |
1 |
p. 119-126
8 p.
|
artikel
|
| 22 |
Selective reactive ion etching of PECVD silicon nitride over amorphous silicon in CF 4 H 2 and nitrogen containing CF 4 H 2 plasma gas mixtures
|
Kumar, M.Jagadesh
|
|
1996
|
39 |
1 |
p. 33-37
5 p.
|
artikel
|
| 23 |
Small geometry MOS threshold voltage variations from solutions of the three-dimensional Poisson's equation
|
Oh, Sung-Hun
|
|
1996
|
39 |
1 |
p. 109-117
9 p.
|
artikel
|
| 24 |
Study of quasi-two dimensional hole gas in Si/Si x Ge1−x /Si quantum wells
|
Cheon, S.
|
|
1996
|
39 |
1 |
p. 7-13
7 p.
|
artikel
|
| 25 |
Temperature-independent transconductance in 0.05 μm-gate AlGaAs GaAs MODFET
|
Ueda, Tetsuzo
|
|
1996
|
39 |
1 |
p. 21-26
6 p.
|
artikel
|
| 26 |
The effect of series resistance on threshold voltage measurement techniques for fully depleted SOI MOSFETs
|
Wainwright, S.P.
|
|
1996
|
39 |
1 |
p. 89-94
6 p.
|
artikel
|
| 27 |
Theoretical thermal runaway analysis of heterojunction bipolar transistors: Junction temperature rise threshold
|
Liou, L.L.
|
|
1996
|
39 |
1 |
p. 165-172
8 p.
|
artikel
|
| 28 |
Time of flight analysis of charge transport in insulators for the nondispersive trap limited domain
|
Mirchina, N.R.
|
|
1996
|
39 |
1 |
p. 159-164
6 p.
|
artikel
|
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