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Journal description
All volumes of the corresponding journal
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Details for article 16 of 28 found articles
| Title: |
Modeling of hole confinement gate voltage range for SiGe channel p-MOSFETs |
| Author: |
Niu, G.F. Ruan, G. Zhang, D.H. |
| Appeared in: |
Solid-state electronics |
| Paging: | Volume 39 (1996) nr. 1 pages 5 p. |
| Year: |
1996 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 16 of 28 found articles
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