|
| << previous | next >> |
Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 3 of 28 found articles
| Title: |
Analytical approach to breakdown voltages in thin-film SOI power MOSFETs |
| Author: |
Kim, Il-Jung Matsumoto, Satoshi Sakai, Tatsuo Yachi, Toshiaki |
| Appeared in: |
Solid-state electronics |
| Paging: | Volume 39 (1996) nr. 1 pages 6 p. |
| Year: |
1996 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 3 of 28 found articles
| << previous | next >> |