| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A method for the determination of barrier heights from the capacitance-voltage characteristics of a Schottky junction containing bulk deep traps
|
Cola, A
|
|
1995
|
38 |
5 |
p. 989-995
7 p.
|
artikel
|
| 2 |
Analysis of internal quantum efficiency and a new graphical evaluation scheme
|
Hirsch, Michèle
|
|
1995
|
38 |
5 |
p. 1009-1015
7 p.
|
artikel
|
| 3 |
Analysis of the rate of change of inversion charge in thin insulator p-type Metal-Oxide-Semiconductor structures
|
Xu, Mingzhen
|
|
1995
|
38 |
5 |
p. 1045-1049
5 p.
|
artikel
|
| 4 |
Analytical model and temperature dependence of the thin film SOI FET
|
Scheinert, S
|
|
1995
|
38 |
5 |
p. 949-959
11 p.
|
artikel
|
| 5 |
An analytic solution for breakdown voltage of cylindrical junctions including the interface charge
|
Yang, Kyoung
|
|
1995
|
38 |
5 |
p. 1107-1108
2 p.
|
artikel
|
| 6 |
A new analytical expression for the interface index of metal-Schottky contacts on semiconductors
|
Sze, J.J
|
|
1995
|
38 |
5 |
p. 1059-1063
5 p.
|
artikel
|
| 7 |
An indirect interband tunneling formulation for an arbitrary electric field direction in semiconductors
|
Tanaka, Sumio
|
|
1995
|
38 |
5 |
p. 1017-1023
7 p.
|
artikel
|
| 8 |
A physical and computationally efficient methodology for statistical circuit simulation in bipolar technologies
|
Cho, Hae-Seok
|
|
1995
|
38 |
5 |
p. 1065-1073
9 p.
|
artikel
|
| 9 |
A tri-layer transmission line model applied to alloyed ohmic contacts
|
Reeves, G.K
|
|
1995
|
38 |
5 |
p. 1115-1117
3 p.
|
artikel
|
| 10 |
Capacitance of abrupt heterojunctions with inversion layers
|
Schmeits, M
|
|
1995
|
38 |
5 |
p. 1001-1007
7 p.
|
artikel
|
| 11 |
Conception of HEMTs threshold voltage based on the MOSFET model
|
Olmos, Alfredo
|
|
1995
|
38 |
5 |
p. 1109-1112
4 p.
|
artikel
|
| 12 |
Current-voltage characteristics of Pd2Si based Schottky diodes on p-type (111) silicon and evaluation of their barrier heights
|
Chand, Subhash
|
|
1995
|
38 |
5 |
p. 1103-1104
2 p.
|
artikel
|
| 13 |
Deep states associated with oxidation induced stacking faults in RTA p-type silicon before and after copper diffusion
|
Saritas, M
|
|
1995
|
38 |
5 |
p. 1025-1034
10 p.
|
artikel
|
| 14 |
Electrical characterization of metal-oxide-InP tunnel diodes based on current-voltage, admittance and low frequency noise measurements
|
Viktorovitch, P
|
|
1995
|
38 |
5 |
p. 1035-1043
9 p.
|
artikel
|
| 15 |
Electrical properties of 6.3 nm RF oxygen plasma oxide grown near room temperature with in situ dry cleaning of Si surface
|
Chanana, R.K
|
|
1995
|
38 |
5 |
p. 1075-1080
6 p.
|
artikel
|
| 16 |
Forward blocking capability of double gate IGBTs at high temperatures
|
Huang, Qin
|
|
1995
|
38 |
5 |
p. 981-982
2 p.
|
artikel
|
| 17 |
Frequency dependent behaviour of an ion implanted GaAs OPFET considering the photovoltaic effect and the gate depletion width modulation
|
Shubha, B.B.Pal
|
|
1995
|
38 |
5 |
p. 1097-1102
6 p.
|
artikel
|
| 18 |
Hydrogen passivation caused by “soft” sputter etch cleaning of Si
|
Vercaemst, A.S
|
|
1995
|
38 |
5 |
p. 983-987
5 p.
|
artikel
|
| 19 |
Improving the characteristics of an InAlAs InGaAs inverted HEMT by inserting an InAs layer into the InGaAs channel
|
Akazaki, Tatsushi
|
|
1995
|
38 |
5 |
p. 997-1000
4 p.
|
artikel
|
| 20 |
Influence of the gate leakage current on the noise performance of MESFETs and MODFETs
|
Danneville, François
|
|
1995
|
38 |
5 |
p. 1081-1087
7 p.
|
artikel
|
| 21 |
Low threshold InAlGaAs AlGaAs strained quantum well lasers grown by molecular beam epitaxy
|
Chyi, J.-I
|
|
1995
|
38 |
5 |
p. 1105-1106
2 p.
|
artikel
|
| 22 |
MOS Controlled Diodes—A new power diode
|
Huang, Qin
|
|
1995
|
38 |
5 |
p. 977-980
4 p.
|
artikel
|
| 23 |
Noise analysis of silicon carbide JFETs
|
Flatresse, P
|
|
1995
|
38 |
5 |
p. 971-975
5 p.
|
artikel
|
| 24 |
Numerical simulation of the thermal oxidation of silicon in N2O ambient
|
Gadiyak, G.V
|
|
1995
|
38 |
5 |
p. 1113-1114
2 p.
|
artikel
|
| 25 |
On the double negative-differential resistance of a superlattice-emitter resonant-tunneling bipolar transistor
|
Lour, Wen-Shiung
|
|
1995
|
38 |
5 |
p. 965-969
5 p.
|
artikel
|
| 26 |
Side data analysis of deep level transient spectroscopy spectra for a multipoint correlation method with binomial weighting coefficients
|
Dmowski, K
|
|
1995
|
38 |
5 |
p. 1051-1057
7 p.
|
artikel
|
| 27 |
Steady-state and transient heat responses in AlGaAs GaAs HBTs
|
Zhou, W.Y
|
|
1995
|
38 |
5 |
p. 1118-1120
3 p.
|
artikel
|
| 28 |
Stepwise continuous solution of the semiconductor equations
|
Pfleiderer, Hans
|
|
1995
|
38 |
5 |
p. 1089-1095
7 p.
|
artikel
|
| 29 |
Two step doping channel FET with symmetric normally on and normally off characteristics
|
Lour, Wen-Shiung
|
|
1995
|
38 |
5 |
p. 961-963
3 p.
|
artikel
|
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