| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A fully nonparabolic hydrodynamic model for describing hot electron transport in GaAs
|
Stewart, R.A.
|
|
1990
|
33 |
7 |
p. 819-829
11 p.
|
artikel
|
| 2 |
A Gummel-Poon model for abrupt and graded heterojunction bipolar transistors (HBTs)
|
Ryum, B.R.
|
|
1990
|
33 |
7 |
p. 869-880
12 p.
|
artikel
|
| 3 |
A model for the non-linear base-collector depletion layer charge and its influence on intermodulation distortion in bipolar transistors
|
Jos, H.F.F.
|
|
1990
|
33 |
7 |
p. 907-915
9 p.
|
artikel
|
| 4 |
A model of charge transport in thermal SiO2 implanted with Si
|
Kalnitsky, A.
|
|
1990
|
33 |
7 |
p. 893-905
13 p.
|
artikel
|
| 5 |
Analysis of a reverse-biased linearly graded junction with high concentration of deep impurities
|
Lopez-Villanueva, J.A.
|
|
1990
|
33 |
7 |
p. 805-811
7 p.
|
artikel
|
| 6 |
Analytic MODFET models beyond the triangular well approximation
|
Drummond, Timothy J.
|
|
1990
|
33 |
7 |
p. 885-891
7 p.
|
artikel
|
| 7 |
An analytical two-dimensional model for CMOS devices at room and cryogenic temperatures
|
Kalonia, K.S.
|
|
1990
|
33 |
7 |
p. 947-951
5 p.
|
artikel
|
| 8 |
A new expression for minority carrier surface recombination velocity at low-high junction of an n +-p-p + silicon diode
|
Singh, S.N.
|
|
1990
|
33 |
7 |
p. 968-970
3 p.
|
artikel
|
| 9 |
An inverted and stacked PMOS transistor by silicon epitaxial lateral overgrowth
|
Glenn Jr, J.L.
|
|
1990
|
33 |
7 |
p. 881-884
4 p.
|
artikel
|
| 10 |
An investigation of pnp polysilicon emitter transistors
|
Laser, A.P.
|
|
1990
|
33 |
7 |
p. 813-818
6 p.
|
artikel
|
| 11 |
A physics based analytical MOSFET model with accurate field dependent mobility
|
Habaš, Predrag
|
|
1990
|
33 |
7 |
p. 923-933
11 p.
|
artikel
|
| 12 |
Application of open circuit voltage decay to the characterisation of heavy doping parameters in a p + emitter of a junction diode
|
Totterdell, D.H.J.
|
|
1990
|
33 |
7 |
p. 793-798
6 p.
|
artikel
|
| 13 |
A study of base built-in field effects on the steady-state current gain of heterojunction bipolar transistors
|
Liou, J.J.
|
|
1990
|
33 |
7 |
p. 845-849
5 p.
|
artikel
|
| 14 |
A technique to measure the dynamic response of a-Si:H thin film transistor circuits
|
Bashir, Rashid
|
|
1990
|
33 |
7 |
p. 973-974
2 p.
|
artikel
|
| 15 |
A unipolar transistor with negative output resistance
|
Dagli, Nadir
|
|
1990
|
33 |
7 |
p. 831-836
6 p.
|
artikel
|
| 16 |
Calculation of electron density in planar-doped high electron mobility transistors
|
Patil, M.B.
|
|
1990
|
33 |
7 |
p. 953-962
10 p.
|
artikel
|
| 17 |
Corrigendum
|
|
|
1990
|
33 |
7 |
p. I-
1 p.
|
artikel
|
| 18 |
Device characterization of L-type MOS transistors
|
Han, C.H.
|
|
1990
|
33 |
7 |
p. 799-804
6 p.
|
artikel
|
| 19 |
Editorial - software survey section
|
|
|
1990
|
33 |
7 |
p. III-V
nvt p.
|
artikel
|
| 20 |
Electrical characteristics of an ion-implanted p-Ga0.47In0.53As MESFET at different Schottky barrier heights
|
Chattopadhyay, S.N.
|
|
1990
|
33 |
7 |
p. 963-967
5 p.
|
artikel
|
| 21 |
Estimation of velocity-overshoot in small size semiconductors
|
Ohno, Yasuo
|
|
1990
|
33 |
7 |
p. 935-939
5 p.
|
artikel
|
| 22 |
Excellent thermal stability of cobaltaluminum alloy Schottky contacts on GaAs substrates
|
Cheng, H.C.
|
|
1990
|
33 |
7 |
p. 863-867
5 p.
|
artikel
|
| 23 |
Gamma radiation effects on polyimide-passivated n + p diodes
|
Ang, S.S.
|
|
1990
|
33 |
7 |
p. 917-921
5 p.
|
artikel
|
| 24 |
g-r noise spectra of semiconductors and insulators with various trap distributions
|
Amberiadis, Kostas
|
|
1990
|
33 |
7 |
p. 975-977
3 p.
|
artikel
|
| 25 |
Hot-electron percolation
|
Ridley, B.K.
|
|
1990
|
33 |
7 |
p. 859-861
3 p.
|
artikel
|
| 26 |
Hot electron transport in two dimensional electron gas
|
Sivan, U.
|
|
1990
|
33 |
7 |
p. 979-986
8 p.
|
artikel
|
| 27 |
Modeling and parameter extraction technique from the ramp-voltage stressed I–V characteristics of thermally grown SiO2
|
Slavcheva, G.
|
|
1990
|
33 |
7 |
p. 837-844
8 p.
|
artikel
|
| 28 |
Modeling the tunnelling current in reverse-biased p/n junctions
|
Liou, J.J.
|
|
1990
|
33 |
7 |
p. 971-972
2 p.
|
artikel
|
| 29 |
The role of acceptor density on the high channel carrier density I–V characteristics of AlGaAs/GaAs MODFETs
|
Krantz, Richard J.
|
|
1990
|
33 |
7 |
p. 941-945
5 p.
|
artikel
|
| 30 |
The surface potential variation in the interelectrode gaps of GaAs cermet-gate charge-coupled devices
|
LeNoble, M.
|
|
1990
|
33 |
7 |
p. 851-857
7 p.
|
artikel
|
Tijdschrift beschrijving