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Journal description
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Details for article 20 of 30 found articles
| Title: |
Electrical characteristics of an ion-implanted p-Ga0.47In0.53As MESFET at different Schottky barrier heights |
| Author: |
Chattopadhyay, S.N. Dutta, Debjani Pal, B.B. |
| Appeared in: |
Solid-state electronics |
| Paging: | Volume 33 (1990) nr. 7 pages 5 p. |
| Year: |
1990 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 20 of 30 found articles
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