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                                       Details for article 4 of 30 found articles
 
 
  A model of charge transport in thermal SiO2 implanted with Si
 
 
Title: A model of charge transport in thermal SiO2 implanted with Si
Author: Kalnitsky, A.
Boothroyd, A.R.
Ellul, J.P.
Appeared in: Solid-state electronics
Paging: Volume 33 (1990) nr. 7 pages 13 p.
Year: 1990
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 4 of 30 found articles
 
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