| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A non-GCA model for ground-plane MOSFETs
|
Su, Meihua
|
|
|
209 |
C |
p.
|
artikel
|
| 2 |
A tunable and versatile 28 nm FD-SOI crossbar output circuit for low power analog SNN inference with eNVM synapses
|
Palhares, Joao Henrique Quintino
|
|
|
209 |
C |
p.
|
artikel
|
| 3 |
C-V measurement and modeling of double-BOX Trap-Rich SOI substrate
|
Huang, Yang
|
|
|
209 |
C |
p.
|
artikel
|
| 4 |
Deep learning-based I-V Global Parameter Extraction for BSIM-CMG
|
Chavez, Fredo
|
|
|
209 |
C |
p.
|
artikel
|
| 5 |
Design and verification of a hybrid electrostatic discharge model for Gate-Controlled silicon controlled rectifier
|
Zhang, Ke
|
|
|
209 |
C |
p.
|
artikel
|
| 6 |
Detailed comparison of threshold voltage extraction methods in FD-SOI MOSFETs
|
Pananakakis, Georges
|
|
|
209 |
C |
p.
|
artikel
|
| 7 |
Editorial Board
|
|
|
|
209 |
C |
p.
|
artikel
|
| 8 |
Efficient circuit simulation of a memristive crossbar array with synaptic weight variability
|
Dersch, Nadine
|
|
|
209 |
C |
p.
|
artikel
|
| 9 |
Evidence of Transport Degradation in 22 nm FD-SOI Charge Trapping Transistors for Neural Network Applications
|
Al Mamun, Fahad
|
|
|
209 |
C |
p.
|
artikel
|
| 10 |
Extracting edge conduction around threshold in mesa-isolated SOI MOSFETs
|
Boutayeb, A.
|
|
|
209 |
C |
p.
|
artikel
|
| 11 |
Impact of CVD chemistry on band alignment at the MoS2/SiO2 interface
|
Tummala, P.P.
|
|
|
209 |
C |
p.
|
artikel
|
| 12 |
Is there a limit when the access resistance impact on the extraction of key GAA NS FETs devices parameters can (not) be avoided?
|
Tahiat, A.
|
|
|
209 |
C |
p.
|
artikel
|
| 13 |
Modulation of ballistic injection velocity in phosphorene nanodevices by bias and confinement effects
|
Matić, Mislav
|
|
|
209 |
C |
p.
|
artikel
|
| 14 |
Novel Y-function based strategy for parameter extraction in S/D asymmetric architecture devices and low frequency noise characterization in GAA Si VNW pMOSFETs
|
Tahiat, A.
|
|
|
209 |
C |
p.
|
artikel
|
| 15 |
Optimization of HIL-HTL-free naphthalimide: Isoquinoline TEOLEDs with BZO top electrode
|
Fiat Varol, Songül
|
|
|
209 |
C |
p.
|
artikel
|
| 16 |
Performance and reliability of state-of-the-art commercial UVC light emitting diodes
|
Loveless, James
|
|
|
209 |
C |
p.
|
artikel
|
| 17 |
Post-deposition annealing challenges for ALD Al0.5Si0.5Ox/n-GaN MOS devices
|
Fernandes Paes Pinto Rocha, P.
|
|
|
209 |
C |
p.
|
artikel
|
| 18 |
Random Telegraph Noise and Bias Temperature Instabilities statistical characterization of Ω-gate FDSOI devices at low voltages
|
Pedreira, G.
|
|
|
209 |
C |
p.
|
artikel
|
| 19 |
Resistive switching like-behavior in FD-SOI Ω-gate transistors
|
Valdivieso, C.
|
|
|
209 |
C |
p.
|
artikel
|
| 20 |
Scanning tunneling microscopy for imaging and quantification of defects in as-deposited MoS 2 monolayers on sapphire substrates
|
Rybalchenko, Y.
|
|
|
209 |
C |
p.
|
artikel
|
| 21 |
Simulation process flow for the implementation of industry-standard FD-SOI quantum dot devices
|
Kriekouki, Ioanna
|
|
|
209 |
C |
p.
|
artikel
|
| 22 |
Small-signal behavioral-level modeling of InP HBT based on SO-BP neural network
|
Dong, Jianping
|
|
|
209 |
C |
p.
|
artikel
|
| 23 |
Ultrafast self-powered phototransistor based on Te-WSe2 van der Waals heterojunction
|
Wen, Yuanbo
|
|
|
209 |
C |
p.
|
artikel
|
| 24 |
Ultrathin four-quadrant silicon photodiodes for beam position and monitor applications: Characterization and radiation effects
|
Rafí, J.M.
|
|
|
209 |
C |
p.
|
artikel
|
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