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                             24 results found
no title author magazine year volume issue page(s) type
1 A non-GCA model for ground-plane MOSFETs Su, Meihua
209 C p.
 article
2 A tunable and versatile 28 nm FD-SOI crossbar output circuit for low power analog SNN inference with eNVM synapses Palhares, Joao Henrique Quintino
209 C p.
 article
3 C-V measurement and modeling of double-BOX Trap-Rich SOI substrate Huang, Yang
209 C p.
 article
4 Deep learning-based I-V Global Parameter Extraction for BSIM-CMG Chavez, Fredo
209 C p.
 article
5 Design and verification of a hybrid electrostatic discharge model for Gate-Controlled silicon controlled rectifier Zhang, Ke
209 C p.
 article
6 Detailed comparison of threshold voltage extraction methods in FD-SOI MOSFETs Pananakakis, Georges
209 C p.
 article
7 Editorial Board
209 C p.
 article
8 Efficient circuit simulation of a memristive crossbar array with synaptic weight variability Dersch, Nadine
209 C p.
 article
9 Evidence of Transport Degradation in 22 nm FD-SOI Charge Trapping Transistors for Neural Network Applications Al Mamun, Fahad
209 C p.
 article
10 Extracting edge conduction around threshold in mesa-isolated SOI MOSFETs Boutayeb, A.
209 C p.
 article
11 Impact of CVD chemistry on band alignment at the MoS2/SiO2 interface Tummala, P.P.
209 C p.
 article
12 Is there a limit when the access resistance impact on the extraction of key GAA NS FETs devices parameters can (not) be avoided? Tahiat, A.
209 C p.
 article
13 Modulation of ballistic injection velocity in phosphorene nanodevices by bias and confinement effects Matić, Mislav
209 C p.
 article
14 Novel Y-function based strategy for parameter extraction in S/D asymmetric architecture devices and low frequency noise characterization in GAA Si VNW pMOSFETs Tahiat, A.
209 C p.
 article
15 Optimization of HIL-HTL-free naphthalimide: Isoquinoline TEOLEDs with BZO top electrode Fiat Varol, Songül
209 C p.
 article
16 Performance and reliability of state-of-the-art commercial UVC light emitting diodes Loveless, James
209 C p.
 article
17 Post-deposition annealing challenges for ALD Al0.5Si0.5Ox/n-GaN MOS devices Fernandes Paes Pinto Rocha, P.
209 C p.
 article
18 Random Telegraph Noise and Bias Temperature Instabilities statistical characterization of Ω-gate FDSOI devices at low voltages Pedreira, G.
209 C p.
 article
19 Resistive switching like-behavior in FD-SOI Ω-gate transistors Valdivieso, C.
209 C p.
 article
20 Scanning tunneling microscopy for imaging and quantification of defects in as-deposited MoS 2 monolayers on sapphire substrates Rybalchenko, Y.
209 C p.
 article
21 Simulation process flow for the implementation of industry-standard FD-SOI quantum dot devices Kriekouki, Ioanna
209 C p.
 article
22 Small-signal behavioral-level modeling of InP HBT based on SO-BP neural network Dong, Jianping
209 C p.
 article
23 Ultrafast self-powered phototransistor based on Te-WSe2 van der Waals heterojunction Wen, Yuanbo
209 C p.
 article
24 Ultrathin four-quadrant silicon photodiodes for beam position and monitor applications: Characterization and radiation effects Rafí, J.M.
209 C p.
 article
                             24 results found
 
 Koninklijke Bibliotheek - National Library of the Netherlands