| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Ab initio study of electron mobility in V 2 O 5 via polaron hopping
|
Defrance, Remi
|
|
|
198 |
C |
p.
|
artikel
|
| 2 |
A novel methodology for neural compact modeling based on knowledge transfer
|
Cha, Ye Sle
|
|
|
198 |
C |
p.
|
artikel
|
| 3 |
A power supply clamp with self-cutoff the conducted ESD current path mechanism for latch-up free
|
Sun, Kangming
|
|
|
198 |
C |
p.
|
artikel
|
| 4 |
Approximate H-transformation for numerical stabilization of a deterministic Boltzmann transport equation solver based on a spherical harmonics expansion
|
Cha, Suhyeong
|
|
|
198 |
C |
p.
|
artikel
|
| 5 |
Breaking the subthreshold slope limit in MOSFETs
|
Cristoloveanu, Sorin
|
|
|
198 |
C |
p.
|
artikel
|
| 6 |
Calculation of the mobility in Al2O3/GaN electron channel: Effect of p-doping and comparison with experiments
|
Rrustemi, Bledion
|
|
|
198 |
C |
p.
|
artikel
|
| 7 |
Comprehensive modeling of the extrinsic transconductance for In x Ga 1-x As/In 0.52 Al 0.48As quantum-well high-electron-mobility transistors
|
Yun, Seung-Won
|
|
|
198 |
C |
p.
|
artikel
|
| 8 |
Demonstration of integrate-and-fire neuron circuit for spiking neural networks
|
Woo, Sung Yun
|
|
|
198 |
C |
p.
|
artikel
|
| 9 |
Editorial Board
|
|
|
|
198 |
C |
p.
|
artikel
|
| 10 |
Effect of deoxycholic acid co-sensitization in porphyrin dye on quasi-solid dye-sensitized solar cells comprising titania aerogel with a large surface area
|
Ram Kumar, P.
|
|
|
198 |
C |
p.
|
artikel
|
| 11 |
Efficient atomistic simulations of lateral heterostructure devices with metal contacts
|
Shin, Mincheol
|
|
|
198 |
C |
p.
|
artikel
|
| 12 |
Electron-phonon calculations using a Wannier-based supercell approach: Applications to the monolayer MoS 2 mobility
|
Backman, Jonathan
|
|
|
198 |
C |
p.
|
artikel
|
| 13 |
Fabrication of transparent ZnO/Cu-Mg(OH)2 heterojunction diodes by electrochemical deposition
|
Ichimura, Masaya
|
|
|
198 |
C |
p.
|
artikel
|
| 14 |
Full quantum simulation of Shockley–Read–Hall recombination in p-i-n and tunnel diodes
|
Pilotto, A.
|
|
|
198 |
C |
p.
|
artikel
|
| 15 |
Image-force barrier lowering in top- and side-contacted two-dimensional materials
|
Deylgat, Emeric
|
|
|
198 |
C |
p.
|
artikel
|
| 16 |
Impact of sidewall spacer materials and gate underlap length on negative capacitance double-gate tunnel field-effect transistor (NCDG-TFET)
|
Go, Seungwon
|
|
|
198 |
C |
p.
|
artikel
|
| 17 |
Modeling electrical resistivity of CrSi thin films
|
Sonoda, K.
|
|
|
198 |
C |
p.
|
artikel
|
| 18 |
Modeling of 1D confinement in FD-SOI trigate nanowires at deep cryogenic temperatures
|
Catapano, E.
|
|
|
198 |
C |
p.
|
artikel
|
| 19 |
Simulation-based study on characteristics of dual vertical transfer gates in sub-micron pixels for CMOS image sensors
|
Lee, Wook
|
|
|
198 |
C |
p.
|
artikel
|
| 20 |
Vertical GaN diode BV maximization through rapid TCAD simulation and ML-enabled surrogate model
|
Lu, Albert
|
|
|
198 |
C |
p.
|
artikel
|
| 21 |
Wear-out and breakdown of Ta2O5/Nb:SrTiO3 stacks
|
Boyeras Baldomá, S.
|
|
|
198 |
C |
p.
|
artikel
|
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