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Comprehensive modeling of the extrinsic transconductance for In x Ga 1-x As/In 0.52 Al 0.48As quantum-well high-electron-mobility transistors |
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Titel: |
Comprehensive modeling of the extrinsic transconductance for In x Ga 1-x As/In 0.52 Al 0.48As quantum-well high-electron-mobility transistors |
Auteur: |
Yun, Seung-Won Jo, Hyeon-Bhin Jeong, Hyeon-Seok Park, Wan-Soo Yoo, Ji-Hoon Lee, In-Geun Kim, Tae-Woo Tsutsumi, Takuya Sugiyama, Hiroki Matsuzaki, Hideaki Kim, Dae-Hyun |
Verschenen in: |
Solid-state electronics |
Paginering: |
Jaargang 198 () nr. C pagina's p. |
Jaar: |
2022 |
Inhoud: |
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Uitgever: |
Elsevier Ltd |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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