| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Ab initio quantum transport simulations of monolayer GeS nanoribbons
|
Matić, Mislav
|
|
|
197 |
C |
p.
|
artikel
|
| 2 |
About electron transport and spin control in semiconductor devices
|
Selberherr, Siegfried
|
|
|
197 |
C |
p.
|
artikel
|
| 3 |
A dynamic current hysteresis model for IGZO-TFT
|
Li, Yu
|
|
|
197 |
C |
p.
|
artikel
|
| 4 |
Analytical model based estimation of line edge roughness induced V T variability in nanowire FETs
|
Inge, Shashank V.
|
|
|
197 |
C |
p.
|
artikel
|
| 5 |
An integrate-and-fire neuron with capacitive trans-impedance amplifier for improving linearity in Spiking Neural Networks
|
Cha, Youngsan
|
|
|
197 |
C |
p.
|
artikel
|
| 6 |
Bulk photovoltaic effect in partial overlap MoSe 2 -WSe 2 van der Waals heterostructures: An ab initio quantum transport study
|
Cao, Jiang
|
|
|
197 |
C |
p.
|
artikel
|
| 7 |
Correlation of natural honey-based RRAM processing and switching properties by experimental study and machine learning
|
Sueoka, Brandon
|
|
|
197 |
C |
p.
|
artikel
|
| 8 |
Detailed electrical characterization of 200 mm CMOS compatible GaN/Si HEMTs down to deep cryogenic temperatures
|
Kim, Donghyun
|
|
|
197 |
C |
p.
|
artikel
|
| 9 |
Editorial Board
|
|
|
|
197 |
C |
p.
|
artikel
|
| 10 |
Extraction of effective mobility of In 0.8 Ga 0.2 As/In 0.52 Al 0.48As quantum well high-electron-mobility transistors on InP substrate
|
Park, Wan-Soo
|
|
|
197 |
C |
p.
|
artikel
|
| 11 |
GaN p-i-n ultraviolet photodetectors grown on homogenous GaN bulk substrates
|
Li, Jinxiao
|
|
|
197 |
C |
p.
|
artikel
|
| 12 |
Heat diffusion governing universal trend in saturation current and power in AlGaN/GaN high electron mobility transistors in pulsed operation
|
Parvez, Bazila
|
|
|
197 |
C |
p.
|
artikel
|
| 13 |
Impact of hydrogen coverage on silane adsorption during Si epitaxy from ab initio simulations
|
Treps, Laureline
|
|
|
197 |
C |
p.
|
artikel
|
| 14 |
Low-temperature deuterium annealing to improve performance and reliability in a MOSFET
|
Yu, Ji-Man
|
|
|
197 |
C |
p.
|
artikel
|
| 15 |
Massively parallel FDTD full-band Monte Carlo simulations of electromagnetic THz pulses in p-doped silicon at cryogenic temperatures
|
Jungemann, C.
|
|
|
197 |
C |
p.
|
artikel
|
| 16 |
Negative differential resistance in novel nanoscale devices
|
Dragoman, Mircea
|
|
|
197 |
C |
p.
|
artikel
|
| 17 |
On the noise-sensitivity of entangling quantum logic operations implemented with a semiconductor quantum dot platform
|
Ryu, Hoon
|
|
|
197 |
C |
p.
|
artikel
|
| 18 |
Parasitic parameters extraction of InP HBT only from S-parameters measured under cut-off and normal bias conditions
|
Qi, Junjun
|
|
|
197 |
C |
p.
|
artikel
|
| 19 |
Polarization switching characteristics in AFE/FE Double–Layer devices
|
Fan, Mengqi
|
|
|
197 |
C |
p.
|
artikel
|
| 20 |
Reliability improvement of self-heating effect, hot-carrier injection, and on-current variation by electrical/thermal co-design
|
Suh Song, Young
|
|
|
197 |
C |
p.
|
artikel
|
| 21 |
Robust cryogenic ab-initio quantum transport simulation for LG = 10 nm nanowire
|
Jiao, Tom
|
|
|
197 |
C |
p.
|
artikel
|
| 22 |
TCAD simulation of microwave circuits: The Doherty amplifier
|
Donati Guerrieri, S.
|
|
|
197 |
C |
p.
|
artikel
|
| 23 |
Theoretically probing the relationship between barrier length and resistance in Al/AlO x /Al tunnel junctions
|
Lapham, Paul
|
|
|
197 |
C |
p.
|
artikel
|
| 24 |
Thin-film transistor accumulation-mode modeling
|
Wager, John F.
|
|
|
197 |
C |
p.
|
artikel
|
| 25 |
Threshold voltage of p-type triple-gate junctionless transistors
|
Oproglidis, T.A.
|
|
|
197 |
C |
p.
|
artikel
|
| 26 |
Towards a DFT-based layered model for TCAD simulations of MoS2
|
Donetti, L.
|
|
|
197 |
C |
p.
|
artikel
|
| 27 |
Tunneling leakage in ultrashort-channel MOSFETs—From atomistics to continuum modeling
|
Prentki, Raphaël J.
|
|
|
197 |
C |
p.
|
artikel
|
| 28 |
Vertical homo-junction In 0.53 Ga 0.47 As tunneling field-effect transistors with minimum subthreshold swing of 52 mV/decade
|
Baek, Ji-Min
|
|
|
197 |
C |
p.
|
artikel
|
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