Vertical homo-junction In 0.53 Ga 0.47 As tunneling field-effect transistors with minimum subthreshold swing of 52 mV/decade
Titel:
Vertical homo-junction In 0.53 Ga 0.47 As tunneling field-effect transistors with minimum subthreshold swing of 52 mV/decade
Auteur:
Baek, Ji-Min Kim, Hyo-Jin Yoo, Ji-Hoon Shin, Ju-Won Shin, Ki-Yong Amir, Walid Ju, Gunwu Kim, Hyung-Jun Oh, Joohee Kim, Hyoungsub Kim, Tae-Woo Kim, Dae-Hyun