| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A multi-energy level agnostic approach for defect generation during TDDB stress
|
Vici, Andrea
|
|
|
193 |
C |
p.
|
artikel
|
| 2 |
A unified 2-D model for nanowire junctionless accumulation and inversion mode MOSFET in quasi-ballistic regime
|
Baral, Kamalaksha
|
|
|
193 |
C |
p.
|
artikel
|
| 3 |
Back-gate effects on DC performance and carrier transport in 22 nm FDSOI technology down to cryogenic temperatures
|
Han, Hung-Chi
|
|
|
193 |
C |
p.
|
artikel
|
| 4 |
Edge modes and their conductance in narrow nanoribbons of 2D materials in a topological phase
|
Sverdlov, Viktor
|
|
|
193 |
C |
p.
|
artikel
|
| 5 |
Electron mobility distribution in FD-SOI MOSFETs using a NEGF-Poisson approach
|
DehdashtiAkhavan, Nima
|
|
|
193 |
C |
p.
|
artikel
|
| 6 |
Experiment and analysis of repetitive avalanche low-current stress on 4H-SiC power devices
|
Yuan, Hao
|
|
|
193 |
C |
p.
|
artikel
|
| 7 |
Modeling and simulations of FDSOI five-gate qubit MOS devices down to deep cryogenic temperatures
|
Catapano, E.
|
|
|
193 |
C |
p.
|
artikel
|
| 8 |
Monte Carlo analysis of thermal effects in the DC and AC performance of AlGaN/GaN HEMTs
|
Sánchez-Martín, H.
|
|
|
193 |
C |
p.
|
artikel
|
| 9 |
On the breakdown voltage temperature dependence of high-voltage power diodes passivated with diamond-like carbon
|
Balestra, Luigi
|
|
|
193 |
C |
p.
|
artikel
|
| 10 |
Scanning Probe Microscopy nanoscale electrical characterization of AlGaN/GaN grown on structured GaN templates
|
Szyszka, Adam
|
|
|
193 |
C |
p.
|
artikel
|
| 11 |
Si/Si0.7Ge0.3 A2RAM nanowires fabrication and characterization for 1T-DRAM applications
|
Lacord, J.
|
|
|
193 |
C |
p.
|
artikel
|
| 12 |
Temperature-dependent source access resistance in AlGaN/AlN/GaN HFETs with different ratios of gate-source distance to gate-drain distance
|
Liu, Yan
|
|
|
193 |
C |
p.
|
artikel
|
| 13 |
Temperature increase in STT-MRAM at writing: A fully three-dimensional finite element approach
|
Hadámek, T.
|
|
|
193 |
C |
p.
|
artikel
|
| 14 |
Thermal annealing behavior of InP-based HEMT damaged by proton irradiation
|
Zhao, Xiang-Qian
|
|
|
193 |
C |
p.
|
artikel
|
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