| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analog performance of GaN/AlGaN high-electron-mobility transistors
|
de Oliveira Bergamim, Luis Felipe
|
|
|
183 |
C |
p.
|
artikel
|
| 2 |
Compact modeling of 3D vertical junctionless gate-all-around silicon nanowire transistors towards 3D logic design
|
Mukherjee, Chhandak
|
|
|
183 |
C |
p.
|
artikel
|
| 3 |
Current-to-transconductance ratio technique for simultaneous extraction of threshold voltage and parasitic resistances in MOSFETs
|
Kim, Haesung
|
|
|
183 |
C |
p.
|
artikel
|
| 4 |
Editorial Board
|
|
|
|
183 |
C |
p.
|
artikel
|
| 5 |
Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices
|
Vinuesa, G.
|
|
|
183 |
C |
p.
|
artikel
|
| 6 |
Electron trapping in ferroelectric HfZrO4 and Al- and Si-doped layers
|
Izmailov, R.A.
|
|
|
183 |
C |
p.
|
artikel
|
| 7 |
Enhanced serial RRAM cell for unpredictable bit generation
|
Rodríguez-Montañés, R.
|
|
|
183 |
C |
p.
|
artikel
|
| 8 |
Flat-band voltage shift of 4H-SiC MOS capacitors induced by interface dipole layer formation at the oxide-semiconductor and oxide-oxide interfaces
|
Kil, Tae-Hyeon
|
|
|
183 |
C |
p.
|
artikel
|
| 9 |
Highly-efficient OLED with cesium fluoride electron injection layer
|
Kumar, Pankaj
|
|
|
183 |
C |
p.
|
artikel
|
| 10 |
Interface admittance measurement and simulation of dual gated CVD WS2 MOSCAPs: Mapping the DIT(E) profile
|
Mootheri, Vivek
|
|
|
183 |
C |
p.
|
artikel
|
| 11 |
Inversion layer electron mobility distribution in fully-depleted silicon-on-insulator MOSFETs
|
Umana-Membreno, G.A.
|
|
|
183 |
C |
p.
|
artikel
|
| 12 |
Investigation of the anomalous effect of the AC-signal frequency on flat-band voltage of Al/HfO2/SiO2/Si structures
|
Mazurak, Andrzej
|
|
|
183 |
C |
p.
|
artikel
|
| 13 |
Low-Frequency noise investigation of AlGaN/GaN high-electron-mobility transistors
|
Glória Caño de Andrade, Maria
|
|
|
183 |
C |
p.
|
artikel
|
| 14 |
Microstructure scaling in metal-insulator-transitions of atomic layer deposited VO2 films
|
Niang, K.M.
|
|
|
183 |
C |
p.
|
artikel
|
| 15 |
Mobility degradation in 4H-SiC MOSFETs and interfacial formation of carbon clusters
|
Zhang, Z.
|
|
|
183 |
C |
p.
|
artikel
|
| 16 |
Modeling current and voltage peaks generation in complementary resistive switching devices
|
Blonkowski, S.
|
|
|
183 |
C |
p.
|
artikel
|
| 17 |
New challenges of printed high-к oxide dielectrics
|
Carlos, E.
|
|
|
183 |
C |
p.
|
artikel
|
| 18 |
Optical transitions in monolayer WS2 observed through transient photoconductivity in MIS structures
|
Delie, G.
|
|
|
183 |
C |
p.
|
artikel
|
| 19 |
Preface
|
Lee, Jung-Hee
|
|
|
183 |
C |
p.
|
artikel
|
| 20 |
Robustness of using degree of match in performing analog multiplication with spin-torque oscillators
|
Mazza, Luciano
|
|
|
183 |
C |
p.
|
artikel
|
| 21 |
Role of temperature, MTJ size and pulse-width on STT-MRAM bit-error rate and backhopping
|
Tan, J.
|
|
|
183 |
C |
p.
|
artikel
|
| 22 |
Shallow electron traps in high-k insulating oxides
|
Izmailov, R.A.
|
|
|
183 |
C |
p.
|
artikel
|
| 23 |
Si nanopillar arrays as possible electronic device platforms
|
Kalem, Seref
|
|
|
183 |
C |
p.
|
artikel
|
| 24 |
Study of RTN signals in resistive switching devices based on neural networks
|
González-Cordero, G.
|
|
|
183 |
C |
p.
|
artikel
|
| 25 |
Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge
|
García, Héctor
|
|
|
183 |
C |
p.
|
artikel
|
| 26 |
Temperature dependent characteristics of Ti/Al/Ni/Au Ohmic contact on lattice-matched In0.17Al0.83N/GaN heterostructures
|
Zhou, Dejin
|
|
|
183 |
C |
p.
|
artikel
|
Tijdschrift beschrijving