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Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices |
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Titel: |
Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices |
Auteur: |
Vinuesa, G. Ossorio, O.G. García, H. Sahelices, B. Castán, H. Dueñas, S. Kull, M. Tarre, A. Jogiaas, T. Tamm, A. Kasikov, A. Kukli, K. |
Verschenen in: |
Solid-state electronics |
Paginering: |
Jaargang 183 () nr. C pagina's p. |
Jaar: |
2021 |
Inhoud: |
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Uitgever: |
Elsevier Ltd |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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