| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A laser patterned zero bias Au/Al2O3/Mo metal-insulator-metal diode rectifier for RF detection
|
Shriwastava, Shilpi
|
|
|
171 |
C |
p.
|
artikel
|
| 2 |
A modified finite difference model to the reverse recovery of silicon PIN diodes
|
Zhang, Manhong
|
|
|
171 |
C |
p.
|
artikel
|
| 3 |
A PNP-triggered dynamic substrate GGNMOS with improved performances
|
Sun, K.M.
|
|
|
171 |
C |
p.
|
artikel
|
| 4 |
A study of conductance update method for Ni/SiNx/Si analog synaptic device
|
Kim, Boram
|
|
|
171 |
C |
p.
|
artikel
|
| 5 |
Basic relationships for Hall half-plane structures with multiple extended contacts on the boundary: Applications to the extraction of physical parameters and optimization of graphene and vertical Hall devices
|
Homentcovschi, Dorel
|
|
|
171 |
C |
p.
|
artikel
|
| 6 |
Channel width dependent subthreshold operation of tri-gate junctionless transistors
|
Jeon, Dae-Young
|
|
|
171 |
C |
p.
|
artikel
|
| 7 |
Characterization and electrical modeling of polycrystalline silicon vertical thin film transistors
|
Zhang, Peng
|
|
|
171 |
C |
p.
|
artikel
|
| 8 |
Corrigendum to “Drain current local variability analysis in nanoscale junctionless FinFETs utilizing a compact model” [Solid-State Electron. 170 (2020) 107835]
|
Oproglidis, T.A.
|
|
|
171 |
C |
p.
|
artikel
|
| 9 |
Design of a cascade-MOS-triggered SCR with high holding-voltage for high-voltage ESD protection
|
Zhu, Ling
|
|
|
171 |
C |
p.
|
artikel
|
| 10 |
Editorial Board
|
|
|
|
171 |
C |
p.
|
artikel
|
| 11 |
Effect of surface stoichiometry on the non-alloyed ohmic contact to N-face n-GaN
|
Zhou, Rui
|
|
|
171 |
C |
p.
|
artikel
|
| 12 |
Effects of traps in the gate stack on the small-signal RF response of III-V nanowire MOSFETs
|
Hellenbrand, Markus
|
|
|
171 |
C |
p.
|
artikel
|
| 13 |
Impact of nitridation on the active near-interface traps in gate oxides on 4H-SiC
|
Pande, Peyush
|
|
|
171 |
C |
p.
|
artikel
|
| 14 |
Impact of the transition region between active area and edge termination on electrical performance of SiC MOSFET
|
Liu, Shaoyu
|
|
|
171 |
C |
p.
|
artikel
|
| 15 |
Improved physics-based analysis to discriminate the flicker noise origin at very low temperature and drain voltage polarization
|
Cretu, B.
|
|
|
171 |
C |
p.
|
artikel
|
| 16 |
Laser annealing enhanced the photophysical performance of Pt/n-PSi/ZnO/Pt-based photodetectors
|
Thahe, Asad A.
|
|
|
171 |
C |
p.
|
artikel
|
| 17 |
Modeling source/drain lateral Gaussian doping profile of DG-MOSFET using Green’s function approach
|
Shukla, Alok Kumar
|
|
|
171 |
C |
p.
|
artikel
|
| 18 |
Phenol red based hybrid photodiode for optical detector applications
|
Kacus, Hatice
|
|
|
171 |
C |
p.
|
artikel
|
| 19 |
Role of quantum capacitance on the random dopant fluctuation induced threshold voltage variability in junctionless InGaAs FinFETs
|
Nawaz, SK Masum
|
|
|
171 |
C |
p.
|
artikel
|
| 20 |
Schottky barrier diodes isolated by local oxidation of SiC (LOCOSiC) using pre-amorphization implantation technology
|
Cheng, Jung-Chien
|
|
|
171 |
C |
p.
|
artikel
|
| 21 |
Stability of zinc nitride thin-film transistors under positive and negative bias stress
|
Dominguez, Miguel A.
|
|
|
171 |
C |
p.
|
artikel
|
| 22 |
Surface modification of the TiO2/g-CN core-shell nanostructure with bimetallic NiMoO4 nanosheets for the improved photoelectrochemical water oxidation
|
Wang, Lingling
|
|
|
171 |
C |
p.
|
artikel
|
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