| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A digitally tunable small-area composite-varactor array operated with positive and negative control voltages for high linearity and low loss RF circuit applications
|
Kim, Sanggil
|
|
|
163 |
C |
p.
|
artikel
|
| 2 |
Adjustable response of PZT thin film based piezoelectric micro-actuator through DC bias pre-polarization
|
Gong, Dongdong
|
|
|
163 |
C |
p.
|
artikel
|
| 3 |
Analytic model of spalling technique for thickness-controlled separation of single-crystalline semiconductor layers
|
Park, Honghwi
|
|
|
163 |
C |
p.
|
artikel
|
| 4 |
An empirical noise model for III-V compound semiconductor based HBT
|
Zhang, Ao
|
|
|
163 |
C |
p.
|
artikel
|
| 5 |
A physical and versatile aging compact model for hot carrier degradation in SiGe HBTs under dynamic operating conditions
|
Mukherjee, C.
|
|
|
163 |
C |
p.
|
artikel
|
| 6 |
Capacitance-voltage technique for characterization of lateral trap locations along the channel in low-temperature poly-silicon thin film transistors
|
Yoo, Han Bin
|
|
|
163 |
C |
p.
|
artikel
|
| 7 |
Design guideline of tunnel field-effect transistors (TFETs) considering negative differential transconductance (NDT)
|
Lee, Jang Woo
|
|
|
163 |
C |
p.
|
artikel
|
| 8 |
Digital readout optimization of the random resistive states in magnetic tunnel junction
|
Egler, Thomas
|
|
|
163 |
C |
p.
|
artikel
|
| 9 |
Editorial Board
|
|
|
|
163 |
C |
p.
|
artikel
|
| 10 |
Effects of recess depths on performance of AlGaN/GaN power MIS-HEMTs on the Si substrates and threshold voltage model of different recess depths for the using HfO2 gate insulator
|
Zhao, Yaopeng
|
|
|
163 |
C |
p.
|
artikel
|
| 11 |
Impedance spectroscopy-based electrical equivalent model of a thermoelectric module for the figure of merit (ZT)
|
Lee, Jaewoo
|
|
|
163 |
C |
p.
|
artikel
|
| 12 |
Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition
|
Jang, Yoonseo
|
|
|
163 |
C |
p.
|
artikel
|
| 13 |
Improved organic solar cell by incorporating silver nanoparticles embedded polyaniline as buffer layer
|
Moiz, S.A.
|
|
|
163 |
C |
p.
|
artikel
|
| 14 |
Indirect avalanche event detection of Single Photon Avalanche Diode implemented in CMOS FDSOI technology
|
Chaves de Albuquerque, Tulio
|
|
|
163 |
C |
p.
|
artikel
|
| 15 |
Input-modulating adaptive neuron circuit employing asymmetric floating-gate MOSFET with two independent control gates
|
Kim, Taehyung
|
|
|
163 |
C |
p.
|
artikel
|
| 16 |
Low power-high speed performance of 8T static RAM cell within GaN TFET, FinFET, and GNRFET technologies – A review
|
Patnala, Mounica
|
|
|
163 |
C |
p.
|
artikel
|
| 17 |
Modelling and analysis of gate leakage current and its wafer level variability in advanced FD-SOI MOSFETs
|
Pradeep, Krishna
|
|
|
163 |
C |
p.
|
artikel
|
| 18 |
Theoretical study of ferroelectric-gated nanoelectromechanical diode nonvolatile memory cell
|
Choe, Kihun
|
|
|
163 |
C |
p.
|
artikel
|
| 19 |
Tuning of ionization potential in amorphous Cd–In–O thin films
|
Kim, Minseok
|
|
|
163 |
C |
p.
|
artikel
|
| 20 |
Understanding the metal-oxides induced reduction of the contact resistance in organic transistors
|
Donnhäuser, Shabnam
|
|
|
163 |
C |
p.
|
artikel
|
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