| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Achieving enhanced pH sensitivity using capacitive coupling in extended gate FET sensors with various high-K sensing films
|
Kang, Joo-Won
|
|
2019
|
152 |
C |
p. 29-32
|
artikel
|
| 2 |
A global parameters extraction technique to model organic field effect transistors output characteristics
|
Fatima, S.
|
|
2019
|
152 |
C |
p. 81-92
|
artikel
|
| 3 |
An accurate expression to estimate the metal gate granularity induced threshold voltage variability in NWFETs
|
Harsha Vardhan, P.
|
|
2019
|
152 |
C |
p. 65-71
|
artikel
|
| 4 |
Device scaling considerations for sub-90-nm 2-bit/cell split-gate flash memory cell
|
Xu, Zhaozhao
|
|
2019
|
152 |
C |
p. 46-52
|
artikel
|
| 5 |
Editorial Board
|
|
|
2019
|
152 |
C |
p. ii
|
artikel
|
| 6 |
Effectively reducing the switching voltages based on CdS/ZnO heterostructure for resistive switching memory
|
Duan, Weijie
|
|
2019
|
152 |
C |
p. 1-3
|
artikel
|
| 7 |
Growth of AlGaN/GaN heterostructure with lattice-matched AlIn(Ga)N back barrier
|
Kim, Jeong-Gil
|
|
2019
|
152 |
C |
p. 24-28
|
artikel
|
| 8 |
Heavy ion-induced single event effects in active pixel sensor array
|
Cai, Yu-Long
|
|
2019
|
152 |
C |
p. 93-99
|
artikel
|
| 9 |
High-periphery GaN HEMT modeling up to 65 GHz and 200 °C
|
Crupi, Giovanni
|
|
2019
|
152 |
C |
p. 11-16
|
artikel
|
| 10 |
Improvement in drain-induced-barrier-lowering and on-state current characteristics of bulk Si fin field-effect-transistors using high temperature Phosphorus extension ion implantation
|
Kikuchi, Yoshiaki
|
|
2019
|
152 |
C |
p. 58-64
|
artikel
|
| 11 |
Investigation of transient current characteristics with scaling-down poly-Si body thickness and grain size of 3D NAND flash memory
|
Lee, Sang-Ho
|
|
2019
|
152 |
C |
p. 41-45
|
artikel
|
| 12 |
Investigation on single pulse avalanche failure of SiC MOSFET and Si IGBT
|
Ren, Na
|
|
2019
|
152 |
C |
p. 33-40
|
artikel
|
| 13 |
Island diodes triggering SCR in waffle layout with high failure current for HV ESD protection
|
Zheng, Yifei
|
|
2019
|
152 |
C |
p. 17-23
|
artikel
|
| 14 |
On the extraction of resistivity and area of nanoscale interconnect lines by temperature-dependent resistance measurements
|
Adelmann, Christoph
|
|
2019
|
152 |
C |
p. 72-80
|
artikel
|
| 15 |
Pulse duration effect during pulsed gate-bias stress in a-InGaZnO thin film transistors
|
Kim, Woo-Sic
|
|
2019
|
152 |
C |
p. 53-57
|
artikel
|
| 16 |
Two-step degradation of a-InGaZnO thin film transistors under DC bias stress
|
Hu, Chun-Feng
|
|
2019
|
152 |
C |
p. 4-10
|
artikel
|
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