| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A drain current model for amorphous InGaZnO thin film transistors considering temperature effects
|
Cai, M.X.
|
|
2018
|
141 |
C |
p. 23-30
|
artikel
|
| 2 |
Advanced analytical modeling of double-gate Tunnel-FETs – A performance evaluation
|
Graef, Michael
|
|
2018
|
141 |
C |
p. 31-39
|
artikel
|
| 3 |
Distributed parameter modeling to prevent charge cancellation for discrete thickness piezoelectric energy harvester
|
Krishnasamy, M.
|
|
2018
|
141 |
C |
p. 74-83
|
artikel
|
| 4 |
Editorial Board
|
|
|
2018
|
141 |
C |
p. ii
|
artikel
|
| 5 |
Electrical characterization of vertically stacked p-FET SOI nanowires
|
Cardoso Paz, Bruna
|
|
2018
|
141 |
C |
p. 84-91
|
artikel
|
| 6 |
Enhanced transconductance in a double-gate graphene field-effect transistor
|
Hwang, Byeong-Woon
|
|
2018
|
141 |
C |
p. 65-68
|
artikel
|
| 7 |
Improve the performance of CZTSSe solar cells by applying a SnS BSF layer
|
Omrani, Mir Kazem
|
|
2018
|
141 |
C |
p. 50-57
|
artikel
|
| 8 |
Leakage characterization of top select transistor for program disturbance optimization in 3D NAND flash
|
Zhang, Yu
|
|
2018
|
141 |
C |
p. 18-22
|
artikel
|
| 9 |
Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching
|
Son, Dong-Hyeok
|
|
2018
|
141 |
C |
p. 7-12
|
artikel
|
| 10 |
Normally-off Al2O3/GaN MOSFET: Role of border traps on the device transport characteristics
|
Wang, Hongyue
|
|
2018
|
141 |
C |
p. 13-17
|
artikel
|
| 11 |
Series resistance in different operation regime of junctionless transistors
|
Jeon, Dae-Young
|
|
2018
|
141 |
C |
p. 92-95
|
artikel
|
| 12 |
Solution processed thin film transistor from liquid phase exfoliated MoS2 flakes
|
Zeng, Xiaoling
|
|
2018
|
141 |
C |
p. 58-64
|
artikel
|
| 13 |
Surface stoichiometry modification and improved DC/RF characteristics by plasma treated and annealed AlGaN/GaN HEMTs
|
Upadhyay, Bhanu B.
|
|
2018
|
141 |
C |
p. 1-6
|
artikel
|
| 14 |
Thermal coupling and effect of subharmonic synchronization in a system of two VO2 based oscillators
|
Velichko, Andrey
|
|
2018
|
141 |
C |
p. 40-49
|
artikel
|
| 15 |
X-band T/R switch with body-floating multi-gate PDSOI NMOS transistors
|
Park, Mingyo
|
|
2018
|
141 |
C |
p. 69-73
|
artikel
|
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