| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A new high-voltage interconnection shielding method for SOI monolithic ICs
|
Zhang, Long
|
|
2017
|
133 |
C |
p. 25-30
6 p.
|
artikel
|
| 2 |
Charge based, continuous compact model for the channel current in organic thin-film transistors for all regions of operation
|
Hain, Franziska
|
|
2017
|
133 |
C |
p. 17-24
8 p.
|
artikel
|
| 3 |
Editorial Board
|
|
|
2017
|
133 |
C |
p. IFC-
1 p.
|
artikel
|
| 4 |
Effects of mechanical stresses on the reliability of low-temperature polycrystalline silicon thin film transistors for foldable displays
|
Bae, Min Soo
|
|
2017
|
133 |
C |
p. 1-5
5 p.
|
artikel
|
| 5 |
Forming operation in Ge-rich GexSbyTez phase change memories
|
Palumbo, Elisabetta
|
|
2017
|
133 |
C |
p. 38-44
7 p.
|
artikel
|
| 6 |
GaN-based Schottky barrier ultraviolet photodetectors with graded doping on patterned sapphire substrates
|
Mou, Wenjie
|
|
2017
|
133 |
C |
p. 78-82
5 p.
|
artikel
|
| 7 |
Low frequency noise investigation of 2–3μm GaSb-based laser diodes
|
Glemža, Justinas
|
|
2017
|
133 |
C |
p. 70-77
8 p.
|
artikel
|
| 8 |
Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition
|
Jhang, Pei-Ci
|
|
2017
|
133 |
C |
p. 10-16
7 p.
|
artikel
|
| 9 |
Reliability improvement in GaN HEMT power device using a field plate approach
|
Wu, Wen-Hao
|
|
2017
|
133 |
C |
p. 64-69
6 p.
|
artikel
|
| 10 |
Strong Fermi-level pinning induced by argon inductively coupled plasma treatment and post-metal deposition annealing on 4H-SiC
|
Tsui, Bing-Yue
|
|
2017
|
133 |
C |
p. 83-87
5 p.
|
artikel
|
| 11 |
Study on the electrical degradation of AlGaN/GaN MIS-HEMTs induced by residual stress of SiNx passivation
|
Bai, Zhiyuan
|
|
2017
|
133 |
C |
p. 31-37
7 p.
|
artikel
|
| 12 |
Study on the influence of γ-ray total dose radiation effect on the electrical properties of the uniaxial strained Si nanometer NMOSFET
|
Hao, Minru
|
|
2017
|
133 |
C |
p. 45-52
8 p.
|
artikel
|
| 13 |
The electrical performance and gate bias stability of an amorphous InGaZnO thin-film transistor with HfO2 high-k dielectrics
|
Wang, Ruo Zheng
|
|
2017
|
133 |
C |
p. 6-9
4 p.
|
artikel
|
| 14 |
Van-der-Pauw measurement on devices with four contacts and two orthogonal mirror symmetries
|
Ausserlechner, Udo
|
|
2017
|
133 |
C |
p. 53-63
11 p.
|
artikel
|
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