| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A compact model and direct parameters extraction techniques For amorphous gallium-indium-zinc-oxide thin film transistors
|
Moldovan, Oana
|
|
2016
|
126 |
C |
p. 81-86
6 p.
|
artikel
|
| 2 |
A compact model of the reverse gate-leakage current in GaN-based HEMTs
|
Ma, Xiaoyu
|
|
2016
|
126 |
C |
p. 10-13
4 p.
|
artikel
|
| 3 |
A high aspect ratio silicon-fin FinFET fabricated upon SOI wafer
|
Liaw, Yue-Gie
|
|
2016
|
126 |
C |
p. 46-50
5 p.
|
artikel
|
| 4 |
Ambient effect on thermal stability of amorphous InGaZnO thin film transistors
|
Xu, Jianeng
|
|
2016
|
126 |
C |
p. 170-174
5 p.
|
artikel
|
| 5 |
Analytical model for random dopant fluctuation in double-gate MOSFET in the subthreshold region using macroscopic modeling method
|
Shin, Yong Hyeon
|
|
2016
|
126 |
C |
p. 136-142
7 p.
|
artikel
|
| 6 |
An improved energy efficient SRAM cell for access over a wide frequency range
|
Nayak, Debasish
|
|
2016
|
126 |
C |
p. 14-22
9 p.
|
artikel
|
| 7 |
A novel single-stranded DNA detection method based on organic semiconductor heterojunction
|
Gu, Wen
|
|
2016
|
126 |
C |
p. 104-108
5 p.
|
artikel
|
| 8 |
Circuit model for single-energy-level trap centers in FETs
|
Albahrani, Sayed Ali
|
|
2016
|
126 |
C |
p. 143-151
9 p.
|
artikel
|
| 9 |
Controllable design of solid-state perovskite solar cells by SCAPS device simulation
|
Tan, Kai
|
|
2016
|
126 |
C |
p. 75-80
6 p.
|
artikel
|
| 10 |
Editorial Board
|
|
|
2016
|
126 |
C |
p. IFC-
1 p.
|
artikel
|
| 11 |
Fin width dependence on gate controllability of InGaAs channel FinFETs with regrown source/drain
|
Kise, Nobukazu
|
|
2016
|
126 |
C |
p. 92-95
4 p.
|
artikel
|
| 12 |
Impact of hydrogen anneal on low frequency noise of n- and p-MOSFET
|
Ioannidis, E.G.
|
|
2016
|
126 |
C |
p. 158-162
5 p.
|
artikel
|
| 13 |
Improvement in optical performance and color uniformity by optimizing the remote phosphor caps geometry for chip-on-board light emitting diodes
|
Li, Jiasheng
|
|
2016
|
126 |
C |
p. 36-45
10 p.
|
artikel
|
| 14 |
Improvement of RF performance for AlGaN/GaN HEMT by using a cavity structure
|
Wang, Wen
|
|
2016
|
126 |
C |
p. 32-35
4 p.
|
artikel
|
| 15 |
Improvement of the positive bias stability of a-IGZO TFTs by the HCN treatment
|
Kim, Myeong-Ho
|
|
2016
|
126 |
C |
p. 87-91
5 p.
|
artikel
|
| 16 |
Investigation of impact of post-metallization annealing on reliability of 65nm NOR floating-gate flash memories
|
Chiu, Shengfen
|
|
2016
|
126 |
C |
p. 125-129
5 p.
|
artikel
|
| 17 |
Layout optimization of GGISCR structure for on-chip system level ESD protection applications
|
Zeng, Jie
|
|
2016
|
126 |
C |
p. 152-157
6 p.
|
artikel
|
| 18 |
Modeling boron dose loss in sidewall spacer stacks of complementary metal oxide semiconductor transistors
|
Essa, Z.
|
|
2016
|
126 |
C |
p. 163-169
7 p.
|
artikel
|
| 19 |
Modeling of the charge transfer in a lateral drift field photo detector
|
Driewer, Adrian
|
|
2016
|
126 |
C |
p. 51-58
8 p.
|
artikel
|
| 20 |
Multibias and thermal behavior of microwave GaN and GaAs based HEMTs
|
Alim, Mohammad A.
|
|
2016
|
126 |
C |
p. 67-74
8 p.
|
artikel
|
| 21 |
On the design of GaN vertical MESFETs on commercial LED sapphire wafers
|
Atalla, Mahmoud R.M.
|
|
2016
|
126 |
C |
p. 23-31
9 p.
|
artikel
|
| 22 |
Photovoltaic characteristics of each subcell evaluated in situ in a triple-junction solar cell
|
Huang, Tzu-Hsuan
|
|
2016
|
126 |
C |
p. 109-114
6 p.
|
artikel
|
| 23 |
Schottky Barrier Thin Film Transistor (SB-TFT) on low-temperature polycrystalline silicon
|
De Iacovo, A.
|
|
2016
|
126 |
C |
p. 1-4
4 p.
|
artikel
|
| 24 |
Simulation-based study of negative capacitance double-gate junctionless transistors with ferroelectric gate dielectric
|
Jiang, Chunsheng
|
|
2016
|
126 |
C |
p. 130-135
6 p.
|
artikel
|
| 25 |
The causes of GaN HEMT bell-shaped transconductance degradation
|
Chen, Chung-Hsu
|
|
2016
|
126 |
C |
p. 115-124
10 p.
|
artikel
|
| 26 |
Variable temperature performance of a fully screen printed transistor switch
|
Zambou, Serges
|
|
2016
|
126 |
C |
p. 59-66
8 p.
|
artikel
|
| 27 |
Vertical MoS2/hBN/MoS2 interlayer tunneling field effect transistor
|
Srivastava, Ashok
|
|
2016
|
126 |
C |
p. 96-103
8 p.
|
artikel
|
| 28 |
ZnO nanorods/graphene/Ni/Au hybrid structures as transparent conductive layer in GaN LED for low work voltage and high light extraction
|
Xu, Kun
|
|
2016
|
126 |
C |
p. 5-9
5 p.
|
artikel
|
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