| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A high efficiency C-band internally-matched harmonic tuning GaN power amplifier
|
Lu, Y.
|
|
2016
|
123 |
C |
p. 96-100
5 p.
|
artikel
|
| 2 |
Analysis of ballistic and quasi-ballistic hole transport properties in germanium nanowires based on an extended “Top of the Barrier” model
|
Tanaka, Hajime
|
|
2016
|
123 |
C |
p. 143-149
7 p.
|
artikel
|
| 3 |
Analytical model of LDMOS with a double step buried oxide layer
|
Yuan, Song
|
|
2016
|
123 |
C |
p. 6-14
9 p.
|
artikel
|
| 4 |
Comparative analysis of the intrinsic voltage gain and unit gain frequency between SOI and bulk FinFETs up to high temperatures
|
Oliveira, Alberto Vinicius de
|
|
2016
|
123 |
C |
p. 124-129
6 p.
|
artikel
|
| 5 |
Comprehensive behavioral model of dual-gate high voltage JFET and pinch resistor
|
Banáš, Stanislav
|
|
2016
|
123 |
C |
p. 133-142
10 p.
|
artikel
|
| 6 |
Design and experiment of 4H-SiC JBS diodes achieving a near-theoretical breakdown voltage with non-uniform floating limiting rings terminal
|
Yuan, Hao
|
|
2016
|
123 |
C |
p. 58-62
5 p.
|
artikel
|
| 7 |
Determining the base resistance of InP HBTs: An evaluation of methods and structures
|
Nardmann, Tobias
|
|
2016
|
123 |
C |
p. 68-77
10 p.
|
artikel
|
| 8 |
Editorial Board
|
|
|
2016
|
123 |
C |
p. IFC-
1 p.
|
artikel
|
| 9 |
Effect of depth of traps in ZnO polycrystalline thin films on ZnO-TFTs performance
|
Medina-Montes, Maria I.
|
|
2016
|
123 |
C |
p. 119-123
5 p.
|
artikel
|
| 10 |
Effect of high-k and vacuum dielectrics as gate stack on a junctionless cylindrical surrounding gate (JL-CSG) MOSFET
|
Sharma, Aniruddh
|
|
2016
|
123 |
C |
p. 26-32
7 p.
|
artikel
|
| 11 |
Effects of buffer layer and thermal annealing on the performance of hybrid Cu2S/PVK electrically bistable devices
|
Li, Xu
|
|
2016
|
123 |
C |
p. 101-105
5 p.
|
artikel
|
| 12 |
Electric-field dependence of electron drift velocity in 4H–SiC
|
Ivanov, P.A.
|
|
2016
|
123 |
C |
p. 15-18
4 p.
|
artikel
|
| 13 |
Enhancement of photo-response via surface plasmon resonance induced by Ag nano-particles embedded in ZnO
|
Li, Gaoming
|
|
2016
|
123 |
C |
p. 33-37
5 p.
|
artikel
|
| 14 |
Evaluation of photovoltaic properties of nanocrystalline-FeSi2/Si heterojunctions
|
Shaban, Mahmoud
|
|
2016
|
123 |
C |
p. 111-118
8 p.
|
artikel
|
| 15 |
Extraction of parasitic and channel resistance components in FinFETs using TCAD tools
|
Narayanan, Sudarshan
|
|
2016
|
123 |
C |
p. 44-50
7 p.
|
artikel
|
| 16 |
Improved modeling of GaN HEMTs for predicting thermal and trapping-induced-kink effects
|
Jarndal, Anwar
|
|
2016
|
123 |
C |
p. 19-25
7 p.
|
artikel
|
| 17 |
Influence of annealing in H atmosphere on the electrical properties of Al2O3 layers grown on p-type Si by the atomic layer deposition technique
|
Kolkovsky, Vl.
|
|
2016
|
123 |
C |
p. 89-95
7 p.
|
artikel
|
| 18 |
Kilohertz organic complementary inverters driven by surface-grafting conducting polypyrrole electrodes
|
Zhang, Xi
|
|
2016
|
123 |
C |
p. 51-57
7 p.
|
artikel
|
| 19 |
Modeling of diffusion mechanism of conductive channel oxidation in a Pt/NiO/Pt memory switching structure
|
Sysun, V.I.
|
|
2016
|
123 |
C |
p. 78-83
6 p.
|
artikel
|
| 20 |
New Y-function based MOSFET parameter extraction method from weak to strong inversion range
|
Henry, J.B.
|
|
2016
|
123 |
C |
p. 84-88
5 p.
|
artikel
|
| 21 |
Performance and carrier transport analysis of In0.7Ga0.3As quantum-well MOSFETs with Al2O3/HfO2 gate stack
|
Son, Seung-Woo
|
|
2016
|
123 |
C |
p. 63-67
5 p.
|
artikel
|
| 22 |
Process optimizations to recessed e-SiGe source/drain for performance enhancement in 22nm all-last high-k/metal-gate pMOSFETs
|
Qin, Changliang
|
|
2016
|
123 |
C |
p. 38-43
6 p.
|
artikel
|
| 23 |
Transient collector modulation of 4H–SiC BJTs during switch-on process
|
Yuferev, Valentin S.
|
|
2016
|
123 |
C |
p. 130-132
3 p.
|
artikel
|
| 24 |
Transport mechanisms of leakage current in Al2O3/InAlAs MOS capacitors
|
Jin, Chengji
|
|
2016
|
123 |
C |
p. 106-110
5 p.
|
artikel
|
| 25 |
Ultra-thin 20nm-PECVD-Si3N4 surface passivation in T-shaped gate InAlAs/InGaAs InP-based HEMTs and its impact on DC and RF performance
|
Ding, Peng
|
|
2016
|
123 |
C |
p. 1-5
5 p.
|
artikel
|
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