| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A monolithic 3D integrated nanomagnetic co-processing unit
|
Becherer, M.
|
|
2016
|
115 |
PB |
p. 74-80
7 p.
|
artikel
|
| 2 |
A new latch-free LIGBT on SOI with very high current density and low drive voltage
|
Olsson, J.
|
|
2016
|
115 |
PB |
p. 179-184
6 p.
|
artikel
|
| 3 |
BIMOS transistor solutions for ESD protection in FD-SOI UTBB CMOS technology
|
Galy, Philippe
|
|
2016
|
115 |
PB |
p. 192-200
9 p.
|
artikel
|
| 4 |
Characterization of ultrathin-body Germanium-on-insulator (GeOI) structures and MOSFETs on flipped Smart-Cut™ GeOI substrates
|
Yu, Xiao
|
|
2016
|
115 |
PB |
p. 120-125
6 p.
|
artikel
|
| 5 |
Comparison of self-heating and its effect on analogue performance in 28nm bulk and FDSOI
|
Makovejev, S.
|
|
2016
|
115 |
PB |
p. 219-224
6 p.
|
artikel
|
| 6 |
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells
|
Zerveas, George
|
|
2016
|
115 |
PB |
p. 92-102
11 p.
|
artikel
|
| 7 |
Conduction barrier offset engineering for DRAM capacitor scaling
|
Pešić, Milan
|
|
2016
|
115 |
PB |
p. 133-139
7 p.
|
artikel
|
| 8 |
Editorial Board
|
|
|
2016
|
115 |
PB |
p. IFC-
1 p.
|
artikel
|
| 9 |
Electron mobility in ultra-thin InGaAs channels: Impact of surface orientation and different gate oxide materials
|
Krivec, Sabina
|
|
2016
|
115 |
PB |
p. 109-119
11 p.
|
artikel
|
| 10 |
Experimental demonstration of strained Si nanowire GAA n-TFETs and inverter operation with complementary TFET logic at low supply voltages
|
Luong, G.V.
|
|
2016
|
115 |
PB |
p. 152-159
8 p.
|
artikel
|
| 11 |
Fabrication and electrical characterizations of SGOI tunnel FETs with gate length down to 50nm
|
Le Royer, C.
|
|
2016
|
115 |
PB |
p. 167-172
6 p.
|
artikel
|
| 12 |
Impact of bias conditions on electrical stress and ionizing radiation effects in Si-based TFETs
|
Ding, Lili
|
|
2016
|
115 |
PB |
p. 146-151
6 p.
|
artikel
|
| 13 |
Impact of non uniform strain configuration on transport properties for FD14+ devices
|
Medina-Bailon, C.
|
|
2016
|
115 |
PB |
p. 232-236
5 p.
|
artikel
|
| 14 |
Insights on the physics and application of off-plane quantum transport through graphene and 2D materials
|
Iannaccone, G.
|
|
2016
|
115 |
PB |
p. 213-218
6 p.
|
artikel
|
| 15 |
Investigation of ambipolar signature in SiGeOI homojunction tunnel FETs
|
Hutin, L.
|
|
2016
|
115 |
PB |
p. 160-166
7 p.
|
artikel
|
| 16 |
Nano systems and devices for applications in biology and nanotechnology
|
Perret, G.
|
|
2016
|
115 |
PB |
p. 66-73
8 p.
|
artikel
|
| 17 |
New high resolution Random Telegraph Noise (RTN) characterization method for resistive RAM
|
Maestro, M.
|
|
2016
|
115 |
PB |
p. 140-145
6 p.
|
artikel
|
| 18 |
Properties and mechanisms of Z2-FET at variable temperature
|
Dirani, Hassan El
|
|
2016
|
115 |
PB |
p. 201-206
6 p.
|
artikel
|
| 19 |
Replacement fin processing for III–V on Si: From FinFets to nanowires
|
Waldron, Niamh
|
|
2016
|
115 |
PB |
p. 81-91
11 p.
|
artikel
|
| 20 |
Resistive memory variability: A simplified trap-assisted tunneling model
|
Garbin, Daniele
|
|
2016
|
115 |
PB |
p. 126-132
7 p.
|
artikel
|
| 21 |
Second harmonic generation for contactless non-destructive characterization of silicon on insulator wafers
|
Damianos, D.
|
|
2016
|
115 |
PB |
p. 237-243
7 p.
|
artikel
|
| 22 |
Selected papers from the EUROSOI-ULIS conference
|
Gnani, Elena
|
|
2016
|
115 |
PB |
p. 65-
1 p.
|
artikel
|
| 23 |
Spectral sensitivity of graphene/silicon heterojunction photodetectors
|
Riazimehr, Sarah
|
|
2016
|
115 |
PB |
p. 207-212
6 p.
|
artikel
|
| 24 |
Study of high-temperature Smart Cut™: Application to silicon-on-sapphire films and to thin foils of single crystal silicon
|
Meyer, Raphaël
|
|
2016
|
115 |
PB |
p. 225-231
7 p.
|
artikel
|
| 25 |
TCAD analysis of the leakage current and breakdown versus temperature of GaN-on-Silicon vertical structures
|
Cornigli, Davide
|
|
2016
|
115 |
PB |
p. 173-178
6 p.
|
artikel
|
| 26 |
The role of cold carriers and the multiple-carrier process of Si–H bond dissociation for hot-carrier degradation in n- and p-channel LDMOS devices
|
Sharma, Prateek
|
|
2016
|
115 |
PB |
p. 185-191
7 p.
|
artikel
|
| 27 |
Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
|
Djara, Vladimir
|
|
2016
|
115 |
PB |
p. 103-108
6 p.
|
artikel
|
Tijdschrift beschrijving