Digital Library
Close Browse articles from a journal
 
Search for with title:
ABCDEFGHIJKLMNOPQRSTUVWXYZ

     Journal description
       All volumes of the corresponding journal
         All issues of the corresponding volume
                                       All articles of the corresponding issues
 
                             30 results found
no title author magazine year volume issue page(s) type
1 A high-sensitivity 135GHz millimeter-wave imager by compact split-ring-resonator in 65-nm CMOS Li, Nan
 2015
 113 C p. 54-60
7 p.
 article
2 Analysis of InAs-Si heterojunction nanowire tunnel FETs: Extreme confinement vs. bulk Carrillo-Nuñez, Hamilton
 2015
 113 C p. 61-67
7 p.
 article
3 Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation Marino, F.A.
 2015
 113 C p. 9-14
6 p.
 article
4 A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs Villani, F.
 2015
 113 C p. 86-91
6 p.
 article
5 Compact model for parametric instability under arbitrary stress waveform Alagi, Filippo
 2015
 113 C p. 92-100
9 p.
 article
6 Dual Ground Plane EDMOS in 28nm FDSOI for 5V power management applications Litty, Antoine
 2015
 113 C p. 42-48
7 p.
 article
7 Editorial Board 2015
 113 C p. IFC-
1 p.
 article
8 Experimental demonstration of improved analog device performance of nanowire-TFETs Schulte-Braucks, Christian
 2015
 113 C p. 179-183
5 p.
 article
9 Extraction of roughness parameters at nanometer scale by Monte Carlo simulation of Critical Dimension Scanning Electron Microscopy Ciappa, M.
 2015
 113 C p. 73-78
6 p.
 article
10 FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration Fenouillet-Beranger, C.
 2015
 113 C p. 2-8
7 p.
 article
11 Flexible and stretchable electronics for wearable health devices van den Brand, Jeroen
 2015
 113 C p. 116-120
5 p.
 article
12 High PAE high reliability AlN/GaN double heterostructure Medjdoub, F.
 2015
 113 C p. 49-53
5 p.
 article
13 High-resolution mobility spectrum analysis of magnetoresistance in fully-depleted silicon-on-insulator MOSFETs Umana-Membreno, G.A.
 2015
 113 C p. 109-115
7 p.
 article
14 Hole mobility in InSb-based devices: Dependence on surface orientation, body thickness, and strain Chang, Pengying
 2015
 113 C p. 68-72
5 p.
 article
15 Hybrid Systems in Foil (HySiF) exploiting ultra-thin flexible chips Harendt, Christine
 2015
 113 C p. 101-108
8 p.
 article
16 Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs Rossetto, I.
 2015
 113 C p. 15-21
7 p.
 article
17 Impact of the array background pattern on cycling-induced threshold-voltage instabilities in nanoscale NAND Flash memories Paolucci, G.M.
 2015
 113 C p. 138-143
6 p.
 article
18 Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on performance of tunnel field-effect transistors Morita, Yukinori
 2015
 113 C p. 173-178
6 p.
 article
19 InGaAs inversion layers band structure, electrostatics, and mobility modeling based on 8 band k → · p → theory Pham, Anh-Tuan
 2015
 113 C p. 79-85
7 p.
 article
20 Local non invasive study of SiC diodes with abnormal electrical behavior León, Javier
 2015
 113 C p. 35-41
7 p.
 article
21 Nanoelectromechanical digital logic circuits using curved cantilever switches with amorphous-carbon-coated contacts Ayala, Christopher L.
 2015
 113 C p. 157-166
10 p.
 article
22 Novel AlInN/GaN integrated circuits operating up to 500°C Gaska, R.
 2015
 113 C p. 22-27
6 p.
 article
23 Physics-based stability analysis of MOS transistors Ferrara, A.
 2015
 113 C p. 28-34
7 p.
 article
24 Reliability study of organic complementary logic inverters using constant voltage stress Wrachien, N.
 2015
 113 C p. 151-156
6 p.
 article
25 Selected papers from ESSDERC 2014 Bez, Roberto
 2015
 113 C p. 1-
1 p.
 article
26 Self-consistent simulation on multiple activation energy of retention characteristics in charge trapping flash memory Park, Sangyong
 2015
 113 C p. 144-150
7 p.
 article
27 Statistical analysis of random telegraph noise in HfO2-based RRAM devices in LRS Puglisi, Francesco Maria
 2015
 113 C p. 132-137
6 p.
 article
28 Superior performance and Hot Carrier reliability of strained FDSOI nMOSFETs for advanced CMOS technology nodes Besnard, G.
 2015
 113 C p. 127-131
5 p.
 article
29 Thermal characterization and modeling of ultra-thin silicon chips Alshahed, Muhammad
 2015
 113 C p. 121-126
6 p.
 article
30 Two dimensional quantum mechanical simulation of low dimensional tunneling devices Alper, C.
 2015
 113 C p. 167-172
6 p.
 article
                             30 results found
 
 Koninklijke Bibliotheek - National Library of the Netherlands