| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A high-sensitivity 135GHz millimeter-wave imager by compact split-ring-resonator in 65-nm CMOS
|
Li, Nan
|
|
2015
|
113 |
C |
p. 54-60
7 p.
|
artikel
|
| 2 |
Analysis of InAs-Si heterojunction nanowire tunnel FETs: Extreme confinement vs. bulk
|
Carrillo-Nuñez, Hamilton
|
|
2015
|
113 |
C |
p. 61-67
7 p.
|
artikel
|
| 3 |
Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation
|
Marino, F.A.
|
|
2015
|
113 |
C |
p. 9-14
6 p.
|
artikel
|
| 4 |
A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs
|
Villani, F.
|
|
2015
|
113 |
C |
p. 86-91
6 p.
|
artikel
|
| 5 |
Compact model for parametric instability under arbitrary stress waveform
|
Alagi, Filippo
|
|
2015
|
113 |
C |
p. 92-100
9 p.
|
artikel
|
| 6 |
Dual Ground Plane EDMOS in 28nm FDSOI for 5V power management applications
|
Litty, Antoine
|
|
2015
|
113 |
C |
p. 42-48
7 p.
|
artikel
|
| 7 |
Editorial Board
|
|
|
2015
|
113 |
C |
p. IFC-
1 p.
|
artikel
|
| 8 |
Experimental demonstration of improved analog device performance of nanowire-TFETs
|
Schulte-Braucks, Christian
|
|
2015
|
113 |
C |
p. 179-183
5 p.
|
artikel
|
| 9 |
Extraction of roughness parameters at nanometer scale by Monte Carlo simulation of Critical Dimension Scanning Electron Microscopy
|
Ciappa, M.
|
|
2015
|
113 |
C |
p. 73-78
6 p.
|
artikel
|
| 10 |
FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration
|
Fenouillet-Beranger, C.
|
|
2015
|
113 |
C |
p. 2-8
7 p.
|
artikel
|
| 11 |
Flexible and stretchable electronics for wearable health devices
|
van den Brand, Jeroen
|
|
2015
|
113 |
C |
p. 116-120
5 p.
|
artikel
|
| 12 |
High PAE high reliability AlN/GaN double heterostructure
|
Medjdoub, F.
|
|
2015
|
113 |
C |
p. 49-53
5 p.
|
artikel
|
| 13 |
High-resolution mobility spectrum analysis of magnetoresistance in fully-depleted silicon-on-insulator MOSFETs
|
Umana-Membreno, G.A.
|
|
2015
|
113 |
C |
p. 109-115
7 p.
|
artikel
|
| 14 |
Hole mobility in InSb-based devices: Dependence on surface orientation, body thickness, and strain
|
Chang, Pengying
|
|
2015
|
113 |
C |
p. 68-72
5 p.
|
artikel
|
| 15 |
Hybrid Systems in Foil (HySiF) exploiting ultra-thin flexible chips
|
Harendt, Christine
|
|
2015
|
113 |
C |
p. 101-108
8 p.
|
artikel
|
| 16 |
Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs
|
Rossetto, I.
|
|
2015
|
113 |
C |
p. 15-21
7 p.
|
artikel
|
| 17 |
Impact of the array background pattern on cycling-induced threshold-voltage instabilities in nanoscale NAND Flash memories
|
Paolucci, G.M.
|
|
2015
|
113 |
C |
p. 138-143
6 p.
|
artikel
|
| 18 |
Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on performance of tunnel field-effect transistors
|
Morita, Yukinori
|
|
2015
|
113 |
C |
p. 173-178
6 p.
|
artikel
|
| 19 |
InGaAs inversion layers band structure, electrostatics, and mobility modeling based on 8 band k → · p → theory
|
Pham, Anh-Tuan
|
|
2015
|
113 |
C |
p. 79-85
7 p.
|
artikel
|
| 20 |
Local non invasive study of SiC diodes with abnormal electrical behavior
|
León, Javier
|
|
2015
|
113 |
C |
p. 35-41
7 p.
|
artikel
|
| 21 |
Nanoelectromechanical digital logic circuits using curved cantilever switches with amorphous-carbon-coated contacts
|
Ayala, Christopher L.
|
|
2015
|
113 |
C |
p. 157-166
10 p.
|
artikel
|
| 22 |
Novel AlInN/GaN integrated circuits operating up to 500°C
|
Gaska, R.
|
|
2015
|
113 |
C |
p. 22-27
6 p.
|
artikel
|
| 23 |
Physics-based stability analysis of MOS transistors
|
Ferrara, A.
|
|
2015
|
113 |
C |
p. 28-34
7 p.
|
artikel
|
| 24 |
Reliability study of organic complementary logic inverters using constant voltage stress
|
Wrachien, N.
|
|
2015
|
113 |
C |
p. 151-156
6 p.
|
artikel
|
| 25 |
Selected papers from ESSDERC 2014
|
Bez, Roberto
|
|
2015
|
113 |
C |
p. 1-
1 p.
|
artikel
|
| 26 |
Self-consistent simulation on multiple activation energy of retention characteristics in charge trapping flash memory
|
Park, Sangyong
|
|
2015
|
113 |
C |
p. 144-150
7 p.
|
artikel
|
| 27 |
Statistical analysis of random telegraph noise in HfO2-based RRAM devices in LRS
|
Puglisi, Francesco Maria
|
|
2015
|
113 |
C |
p. 132-137
6 p.
|
artikel
|
| 28 |
Superior performance and Hot Carrier reliability of strained FDSOI nMOSFETs for advanced CMOS technology nodes
|
Besnard, G.
|
|
2015
|
113 |
C |
p. 127-131
5 p.
|
artikel
|
| 29 |
Thermal characterization and modeling of ultra-thin silicon chips
|
Alshahed, Muhammad
|
|
2015
|
113 |
C |
p. 121-126
6 p.
|
artikel
|
| 30 |
Two dimensional quantum mechanical simulation of low dimensional tunneling devices
|
Alper, C.
|
|
2015
|
113 |
C |
p. 167-172
6 p.
|
artikel
|
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