| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comparative study of donor formation in dysprosium, holmium, and erbium implanted silicon
|
Emtsev, V.V
|
|
1998
|
80 |
1-4 |
p. 391-394
4 p.
|
artikel
|
| 2 |
All porous silicon microcavities: growth and physics
|
Pavesi, L.
|
|
1998
|
80 |
1-4 |
p. 43-52
10 p.
|
artikel
|
| 3 |
Amorphous Si/insulator multilayers grown by vacuum deposition and electron cyclotron resonance plasma treatment
|
Baribeau, J.-M
|
|
1998
|
80 |
1-4 |
p. 417-421
5 p.
|
artikel
|
| 4 |
Anodic oxidation of porous silicon bilayers
|
Guerrero-Lemus, R
|
|
1998
|
80 |
1-4 |
p. 173-178
6 p.
|
artikel
|
| 5 |
Application of stain-etched porous silicon in light emitting diodes and solar cells
|
Dimova-Malinovska, D.
|
|
1998
|
80 |
1-4 |
p. 207-211
5 p.
|
artikel
|
| 6 |
a-SiO x :H thin film light emitting devices for Si-based optoelectronics
|
Rossi, M.C.
|
|
1998
|
80 |
1-4 |
p. 405-409
5 p.
|
artikel
|
| 7 |
Black-body emission from nanostructured materials
|
Roura, P
|
|
1998
|
80 |
1-4 |
p. 519-522
4 p.
|
artikel
|
| 8 |
Cathodoluminescence properties of silicon nanocrystallites embedded in silicon oxide thin films
|
Inokuma, T
|
|
1998
|
80 |
1-4 |
p. 247-251
5 p.
|
artikel
|
| 9 |
Characteristics of surface and waveguide emitting SiGe:Er:O diodes
|
Sticht, A
|
|
1998
|
80 |
1-4 |
p. 321-327
7 p.
|
artikel
|
| 10 |
Characterization of ITO/porous silicon LED structures
|
Molnár, K.
|
|
1998
|
80 |
1-4 |
p. 91-97
7 p.
|
artikel
|
| 11 |
C-induced Ge dots: enhanced light-output from Si-based nanostructures
|
Schmidt, O.G
|
|
1998
|
80 |
1-4 |
p. 491-495
5 p.
|
artikel
|
| 12 |
Comparative study of the oxidation of thin porous silicon layers studied by reflectometry, spectroscopic ellipsometry and secondary ion mass spectroscopy
|
Fried, M
|
|
1998
|
80 |
1-4 |
p. 147-152
6 p.
|
artikel
|
| 13 |
Correlation between structural and optical properties of ion beam synthesized β-FeSi2 precipitates in Si
|
Grimaldi, M.G
|
|
1998
|
80 |
1-4 |
p. 467-471
5 p.
|
artikel
|
| 14 |
Defect versus nanocrystal luminescence emitted from room temperature and hot-implanted SiO2 layers
|
Jeong, J.Y
|
|
1998
|
80 |
1-4 |
p. 285-289
5 p.
|
artikel
|
| 15 |
Depth dependence of photoluminescence and chemical bonding in porous silicon
|
Sendova-Vassileva, M
|
|
1998
|
80 |
1-4 |
p. 179-182
4 p.
|
artikel
|
| 16 |
Determination of localized states in porous silicon
|
Matsumoto, Takahiro
|
|
1998
|
80 |
1-4 |
p. 203-206
4 p.
|
artikel
|
| 17 |
Different Er centres in Si and their use for electroluminescent devices
|
Jantsch, W.
|
|
1998
|
80 |
1-4 |
p. 9-17
9 p.
|
artikel
|
| 18 |
Dislocation-related luminescence in Er-implanted silicon
|
Sobolev, N.A.
|
|
1998
|
80 |
1-4 |
p. 357-361
5 p.
|
artikel
|
| 19 |
Dose dependence of room temperature photoluminescence from Si implanted SiO2
|
Cheylan, S
|
|
1998
|
80 |
1-4 |
p. 213-216
4 p.
|
artikel
|
| 20 |
Effect of oxygen implantation on ionoluminescence of porous silicon
|
Żuk, J.
|
|
1998
|
80 |
1-4 |
p. 187-192
6 p.
|
artikel
|
| 21 |
Efficient luminescence from porous silicon
|
Daami, A
|
|
1998
|
80 |
1-4 |
p. 169-172
4 p.
|
artikel
|
| 22 |
Electrical and optical analyses of Er-doped silicon grown by liquid-phase epitaxy
|
Cavallini, A
|
|
1998
|
80 |
1-4 |
p. 343-346
4 p.
|
artikel
|
| 23 |
Electronic and optical properties of semiconducting iron disilicide
|
Filonov, A.B.
|
|
1998
|
80 |
1-4 |
p. 479-484
6 p.
|
artikel
|
| 24 |
Ellipsometric spectroscopy study of photoluminescent Si/SiO2 systems obtained by magnetron co-sputtering
|
Charvet, S
|
|
1998
|
80 |
1-4 |
p. 257-261
5 p.
|
artikel
|
| 25 |
Ellipsometric study of refractive index anisotropy in porous silicon
|
Krzyżanowska, H.
|
|
1998
|
80 |
1-4 |
p. 183-186
4 p.
|
artikel
|
| 26 |
EPR study of erbium-impurity complexes in silicon
|
Carey, J.D.
|
|
1998
|
80 |
1-4 |
p. 297-301
5 p.
|
artikel
|
| 27 |
Erbium-doped silicon epilayers grown by liquid-phase epitaxy
|
Binetti, S
|
|
1998
|
80 |
1-4 |
p. 347-351
5 p.
|
artikel
|
| 28 |
Erbium in silicon–germanium quantum wells
|
Naveed, A.T.
|
|
1998
|
80 |
1-4 |
p. 381-386
6 p.
|
artikel
|
| 29 |
Er-doped edge emitting devices with a SiGe waveguide
|
Du, Chun-Xia
|
|
1998
|
80 |
1-4 |
p. 329-333
5 p.
|
artikel
|
| 30 |
EXAFS analysis of Er sites in Er–O and Er–F co-doped crystalline Si
|
Terrasi, A
|
|
1998
|
80 |
1-4 |
p. 363-367
5 p.
|
artikel
|
| 31 |
Excess Si concentration dependence of the photoluminescence of Si nanoclusters in SiO2 fabricated by ion implantation
|
Shimizu-Iwayama, Tsutomu
|
|
1998
|
80 |
1-4 |
p. 235-239
5 p.
|
artikel
|
| 32 |
Excitation cross-section and lifetime of the excited state of erbium ions in avalanching light-emitting Si:Er:O diodes
|
Sobolev, N.A.
|
|
1998
|
80 |
1-4 |
p. 315-319
5 p.
|
artikel
|
| 33 |
Excitation mechanism of Er in Si studied with a free-electron laser
|
Gregorkiewicz, T
|
|
1998
|
80 |
1-4 |
p. 291-295
5 p.
|
artikel
|
| 34 |
Fabrication of p-Si/β-FeSi2 balls/n-si structures by MBE and their electrical and optical properties
|
Suemasu, T
|
|
1998
|
80 |
1-4 |
p. 473-477
5 p.
|
artikel
|
| 35 |
Field-induced functions of porous Si as a confined system
|
Koshida, Nobuyoshi
|
|
1998
|
80 |
1-4 |
p. 37-42
6 p.
|
artikel
|
| 36 |
Growth and structural characterization of semiconducting Ru2Si3
|
Lenssen, D
|
|
1998
|
80 |
1-4 |
p. 461-465
5 p.
|
artikel
|
| 37 |
Improvement of the luminescence in p-type as-prepared or dye impregnated porous silicon microcavities
|
Setzu, S.
|
|
1998
|
80 |
1-4 |
p. 129-132
4 p.
|
artikel
|
| 38 |
Index
|
|
|
1998
|
80 |
1-4 |
p. 523-525
3 p.
|
artikel
|
| 39 |
Index
|
|
|
1998
|
80 |
1-4 |
p. 531-
1 p.
|
artikel
|
| 40 |
Index
|
|
|
1998
|
80 |
1-4 |
p. 527-529
3 p.
|
artikel
|
| 41 |
Inelastic light scattering and X-ray diffraction from thick free-standing porous silicon films
|
Andrianov, A.V.
|
|
1998
|
80 |
1-4 |
p. 193-198
6 p.
|
artikel
|
| 42 |
Interference filters from porous silicon with laterally varying wavelength of reflection
|
Hunkel, D.
|
|
1998
|
80 |
1-4 |
p. 133-136
4 p.
|
artikel
|
| 43 |
Laser assisted chemical vapour deposition of silicon oxide layers
|
Paiva, P.
|
|
1998
|
80 |
1-4 |
p. 141-145
5 p.
|
artikel
|
| 44 |
Light emission from porous silicon single and multiple cavities
|
Squire, E.K.
|
|
1998
|
80 |
1-4 |
p. 125-128
4 p.
|
artikel
|
| 45 |
Light emission from Si nanocrystals embedded in CaF2 epilayers on Si(111): Effect of rapid thermal annealing
|
Watanabe, Masahiro
|
|
1998
|
80 |
1-4 |
p. 253-256
4 p.
|
artikel
|
| 46 |
Light emitting diode structure based on Si nanocrystals formed by implantation into thermal oxide
|
Lalic, Nenad
|
|
1998
|
80 |
1-4 |
p. 263-267
5 p.
|
artikel
|
| 47 |
Light-emitting structures based on nanocrystalline (Si/CaF2) multiquantum wells
|
Nassiopoulou, A.G.
|
|
1998
|
80 |
1-4 |
p. 81-89
9 p.
|
artikel
|
| 48 |
Local order in light emitting porous silicon studied by XEOL and TEY
|
Dalba, G.
|
|
1998
|
80 |
1-4 |
p. 103-107
5 p.
|
artikel
|
| 49 |
Luminescence from porous silicon doped with erbium–ytterbium complexes
|
Filippov, V.V
|
|
1998
|
80 |
1-4 |
p. 395-398
4 p.
|
artikel
|
| 50 |
Luminescence from Si-Si1−x Ge x /Si1−yCy-Si structures
|
Joelsson, Kenneth B
|
|
1998
|
80 |
1-4 |
p. 497-501
5 p.
|
artikel
|
| 51 |
Luminescence properties of Er3+ in SiN/PS:Er
|
Uekusa, S
|
|
1998
|
80 |
1-4 |
p. 339-342
4 p.
|
artikel
|
| 52 |
1.54μm Emission of pulsed-laser deposited Er-doped films on Si
|
Lanzerstorfer, S.
|
|
1998
|
80 |
1-4 |
p. 353-356
4 p.
|
artikel
|
| 53 |
1.54μm Light emission from Er/O and Er/F doped Si p–i–n diodes grown by molecular beam epitaxy
|
Ni, W.-X.
|
|
1998
|
80 |
1-4 |
p. 309-314
6 p.
|
artikel
|
| 54 |
New efficient mechanism of excitation of electroluminescence from erbium ions in crystalline silicon
|
Bresler, M.S.
|
|
1998
|
80 |
1-4 |
p. 375-379
5 p.
|
artikel
|
| 55 |
On the morphology of stain-etched porous silicon films
|
Schirone, L.
|
|
1998
|
80 |
1-4 |
p. 163-167
5 p.
|
artikel
|
| 56 |
On the origin of 1.5μm luminescence in porous silicon coated with sol–gel derived erbium-doped Fe2O3 films
|
Gaponenko, N.V.
|
|
1998
|
80 |
1-4 |
p. 399-403
5 p.
|
artikel
|
| 57 |
Optical band gap of Si nanoclusters
|
Delerue, C.
|
|
1998
|
80 |
1-4 |
p. 65-73
9 p.
|
artikel
|
| 58 |
Optical properties of nanocrystalline silicon thin films produced by size-selected cluster beam deposition
|
Laguna, M.A
|
|
1998
|
80 |
1-4 |
p. 223-228
6 p.
|
artikel
|
| 59 |
Optical properties of neodymium incorporated in porous silicon
|
M'ghaı̈eth, R.
|
|
1998
|
80 |
1-4 |
p. 387-390
4 p.
|
artikel
|
| 60 |
Optical properties of Si/CaF2 superlattices
|
Degoli, Elena
|
|
1998
|
80 |
1-4 |
p. 411-415
5 p.
|
artikel
|
| 61 |
Optical waveguides in porous silicon pre-patterned by localised nitrogen implantation.
|
Arrand, H.F
|
|
1998
|
80 |
1-4 |
p. 199-202
4 p.
|
artikel
|
| 62 |
Other contents
|
|
|
1998
|
80 |
1-4 |
p. ix-xv
nvt p.
|
artikel
|
| 63 |
Photoluminescence and electroluminescence investigations at Ge-rich SiO2 layers
|
Rebohle, L
|
|
1998
|
80 |
1-4 |
p. 275-279
5 p.
|
artikel
|
| 64 |
Photoluminescence and paramagnetic defects in silicon-implanted silicon dioxide layers
|
Bratus', V.Ya.
|
|
1998
|
80 |
1-4 |
p. 269-273
5 p.
|
artikel
|
| 65 |
Photoluminescence and X-ray characterisation of Si/Si1−x Ge x multiple quantum wells
|
Sidiki, T.P.
|
|
1998
|
80 |
1-4 |
p. 503-507
5 p.
|
artikel
|
| 66 |
Photoluminescence of Ge nanostructures grown by gas source molecular beam epitaxy on silicon (118) surface
|
Serpentini, M
|
|
1998
|
80 |
1-4 |
p. 515-518
4 p.
|
artikel
|
| 67 |
Photoluminescence of porous silicon surfaces stabilized through Lewis acid mediated hydrosilylation
|
Buriak, Jillian M
|
|
1998
|
80 |
1-4 |
p. 29-35
7 p.
|
artikel
|
| 68 |
Photoluminescence quenching of porous silicon in organic solvents: evidence for dielectric effects
|
Fellah, S.
|
|
1998
|
80 |
1-4 |
p. 109-113
5 p.
|
artikel
|
| 69 |
Photoluminescence studies of porous silicon microcavities
|
Xiong, Z.H.
|
|
1998
|
80 |
1-4 |
p. 137-140
4 p.
|
artikel
|
| 70 |
Radiative emission properties of a-SiN:H based nanometric multilayers for light emitting devices
|
Giorgis, F.
|
|
1998
|
80 |
1-4 |
p. 423-427
5 p.
|
artikel
|
| 71 |
Radiative processes in bulk crystalline silicon
|
Davies, Gordon
|
|
1998
|
80 |
1-4 |
p. 1-7
7 p.
|
artikel
|
| 72 |
Room-temperature electroluminescence from erbium-doped amorphous hydrogenated silicon
|
Gusev, O.B
|
|
1998
|
80 |
1-4 |
p. 335-338
4 p.
|
artikel
|
| 73 |
Room-temperature SiGe light-emitting diodes
|
Vescan, L
|
|
1998
|
80 |
1-4 |
p. 485-489
5 p.
|
artikel
|
| 74 |
Scattering-controlled recombination of Δ2-light-hole indirect excitons and apparently enhanced quantum confined Stark effect in tensilely strained Si1−y C y /Si (001) quantum wells
|
Fukatsu, S
|
|
1998
|
80 |
1-4 |
p. 429-433
5 p.
|
artikel
|
| 75 |
Short period (Si6Ge4) p superlattices: photoluminescence and electron microscopy study
|
Pinto, N
|
|
1998
|
80 |
1-4 |
p. 509-513
5 p.
|
artikel
|
| 76 |
Size dependent photoluminescence from Si nanoclusters produced by laser ablation
|
Patrone, L
|
|
1998
|
80 |
1-4 |
p. 217-221
5 p.
|
artikel
|
| 77 |
Solvent detection using porous silicon optical waveguides
|
Arrand, H.F.
|
|
1998
|
80 |
1-4 |
p. 119-123
5 p.
|
artikel
|
| 78 |
Strongly nonlinear luminescence in oxidized porous silicon films
|
Koyama, Hideki
|
|
1998
|
80 |
1-4 |
p. 99-102
4 p.
|
artikel
|
| 79 |
Strong visible photoluminescence in amorphous SiO x and SiO x :H thin films prepared by thermal evaporation of SiO powder
|
Rinnert, H
|
|
1998
|
80 |
1-4 |
p. 445-448
4 p.
|
artikel
|
| 80 |
Substrate temperature dependence of the photoluminescence efficiency of co-sputtered Si/SiO2 layers
|
Charvet, S
|
|
1998
|
80 |
1-4 |
p. 241-245
5 p.
|
artikel
|
| 81 |
The effect of annealing under hydrostatic pressure on the visible photoluminescence from si+-ion implanted SiO2 films
|
Tyschenko, I.E
|
|
1998
|
80 |
1-4 |
p. 229-233
5 p.
|
artikel
|
| 82 |
The influence of oxygen on the lattice sites of rare earths in silicon
|
Wahl, U
|
|
1998
|
80 |
1-4 |
p. 303-307
5 p.
|
artikel
|
| 83 |
The integration of nanoscale porous silicon light emitters: materials science, properties, and integration with electronic circuitry
|
Fauchet, Philippe M
|
|
1998
|
80 |
1-4 |
p. 53-64
12 p.
|
artikel
|
| 84 |
The origin of photoluminescence in Ge-implanted SiO2 layers
|
Kim, H.B.
|
|
1998
|
80 |
1-4 |
p. 281-284
4 p.
|
artikel
|
| 85 |
Time-resolved photoluminescence study of the red emission in nanoporous SiGe alloys
|
Lebib, S
|
|
1998
|
80 |
1-4 |
p. 153-157
5 p.
|
artikel
|
| 86 |
Tunability of the photoluminescence in porous silicon due to different polymer dielectric environments
|
Lopez, Herman A.
|
|
1998
|
80 |
1-4 |
p. 115-118
4 p.
|
artikel
|
| 87 |
Ultrafast carrier dynamics in wide gap hydrogenated amorphous silicon
|
Kudrna, J
|
|
1998
|
80 |
1-4 |
p. 435-438
4 p.
|
artikel
|
| 88 |
Understanding and control of the erbium non-radiative de-excitation processes in silicon
|
Franzò, Giorgia
|
|
1998
|
80 |
1-4 |
p. 19-28
10 p.
|
artikel
|
| 89 |
Visible and infrared photoluminescence from Er-doped SiO x
|
Wan, J
|
|
1998
|
80 |
1-4 |
p. 369-373
5 p.
|
artikel
|
| 90 |
Visible light emission from Si/SiO2 superlattices in optical microcavities
|
Lockwood, D.J
|
|
1998
|
80 |
1-4 |
p. 75-79
5 p.
|
artikel
|
| 91 |
Visible photoluminescence and its mechanisms from a-SiO x :H films with different stoichiometry
|
Wehrspohn, R.B.
|
|
1998
|
80 |
1-4 |
p. 449-453
5 p.
|
artikel
|
| 92 |
Visible photoluminescence from a-Si:H/SiO2 superlattices fabricated by UHV evaporation
|
Nishimoto, K.
|
|
1998
|
80 |
1-4 |
p. 439-444
6 p.
|
artikel
|
| 93 |
XPS investigation of a-Si:H thin films after light soaking
|
Toneva, A
|
|
1998
|
80 |
1-4 |
p. 455-459
5 p.
|
artikel
|
| 94 |
X-ray photoelectron spectroscopy characterization of stain-etched luminescent porous silicon films
|
Zanoni, R
|
|
1998
|
80 |
1-4 |
p. 159-162
4 p.
|
artikel
|
Tijdschrift beschrijving