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                             94 results found
no title author magazine year volume issue page(s) type
1 A comparative study of donor formation in dysprosium, holmium, and erbium implanted silicon Emtsev, V.V
1998
80 1-4 p. 391-394
4 p.
article
2 All porous silicon microcavities: growth and physics Pavesi, L.
1998
80 1-4 p. 43-52
10 p.
article
3 Amorphous Si/insulator multilayers grown by vacuum deposition and electron cyclotron resonance plasma treatment Baribeau, J.-M
1998
80 1-4 p. 417-421
5 p.
article
4 Anodic oxidation of porous silicon bilayers Guerrero-Lemus, R
1998
80 1-4 p. 173-178
6 p.
article
5 Application of stain-etched porous silicon in light emitting diodes and solar cells Dimova-Malinovska, D.
1998
80 1-4 p. 207-211
5 p.
article
6 a-SiO x :H thin film light emitting devices for Si-based optoelectronics Rossi, M.C.
1998
80 1-4 p. 405-409
5 p.
article
7 Black-body emission from nanostructured materials Roura, P
1998
80 1-4 p. 519-522
4 p.
article
8 Cathodoluminescence properties of silicon nanocrystallites embedded in silicon oxide thin films Inokuma, T
1998
80 1-4 p. 247-251
5 p.
article
9 Characteristics of surface and waveguide emitting SiGe:Er:O diodes Sticht, A
1998
80 1-4 p. 321-327
7 p.
article
10 Characterization of ITO/porous silicon LED structures Molnár, K.
1998
80 1-4 p. 91-97
7 p.
article
11 C-induced Ge dots: enhanced light-output from Si-based nanostructures Schmidt, O.G
1998
80 1-4 p. 491-495
5 p.
article
12 Comparative study of the oxidation of thin porous silicon layers studied by reflectometry, spectroscopic ellipsometry and secondary ion mass spectroscopy Fried, M
1998
80 1-4 p. 147-152
6 p.
article
13 Correlation between structural and optical properties of ion beam synthesized β-FeSi2 precipitates in Si Grimaldi, M.G
1998
80 1-4 p. 467-471
5 p.
article
14 Defect versus nanocrystal luminescence emitted from room temperature and hot-implanted SiO2 layers Jeong, J.Y
1998
80 1-4 p. 285-289
5 p.
article
15 Depth dependence of photoluminescence and chemical bonding in porous silicon Sendova-Vassileva, M
1998
80 1-4 p. 179-182
4 p.
article
16 Determination of localized states in porous silicon Matsumoto, Takahiro
1998
80 1-4 p. 203-206
4 p.
article
17 Different Er centres in Si and their use for electroluminescent devices Jantsch, W.
1998
80 1-4 p. 9-17
9 p.
article
18 Dislocation-related luminescence in Er-implanted silicon Sobolev, N.A.
1998
80 1-4 p. 357-361
5 p.
article
19 Dose dependence of room temperature photoluminescence from Si implanted SiO2 Cheylan, S
1998
80 1-4 p. 213-216
4 p.
article
20 Effect of oxygen implantation on ionoluminescence of porous silicon Żuk, J.
1998
80 1-4 p. 187-192
6 p.
article
21 Efficient luminescence from porous silicon Daami, A
1998
80 1-4 p. 169-172
4 p.
article
22 Electrical and optical analyses of Er-doped silicon grown by liquid-phase epitaxy Cavallini, A
1998
80 1-4 p. 343-346
4 p.
article
23 Electronic and optical properties of semiconducting iron disilicide Filonov, A.B.
1998
80 1-4 p. 479-484
6 p.
article
24 Ellipsometric spectroscopy study of photoluminescent Si/SiO2 systems obtained by magnetron co-sputtering Charvet, S
1998
80 1-4 p. 257-261
5 p.
article
25 Ellipsometric study of refractive index anisotropy in porous silicon Krzyżanowska, H.
1998
80 1-4 p. 183-186
4 p.
article
26 EPR study of erbium-impurity complexes in silicon Carey, J.D.
1998
80 1-4 p. 297-301
5 p.
article
27 Erbium-doped silicon epilayers grown by liquid-phase epitaxy Binetti, S
1998
80 1-4 p. 347-351
5 p.
article
28 Erbium in silicon–germanium quantum wells Naveed, A.T.
1998
80 1-4 p. 381-386
6 p.
article
29 Er-doped edge emitting devices with a SiGe waveguide Du, Chun-Xia
1998
80 1-4 p. 329-333
5 p.
article
30 EXAFS analysis of Er sites in Er–O and Er–F co-doped crystalline Si Terrasi, A
1998
80 1-4 p. 363-367
5 p.
article
31 Excess Si concentration dependence of the photoluminescence of Si nanoclusters in SiO2 fabricated by ion implantation Shimizu-Iwayama, Tsutomu
1998
80 1-4 p. 235-239
5 p.
article
32 Excitation cross-section and lifetime of the excited state of erbium ions in avalanching light-emitting Si:Er:O diodes Sobolev, N.A.
1998
80 1-4 p. 315-319
5 p.
article
33 Excitation mechanism of Er in Si studied with a free-electron laser Gregorkiewicz, T
1998
80 1-4 p. 291-295
5 p.
article
34 Fabrication of p-Si/β-FeSi2 balls/n-si structures by MBE and their electrical and optical properties Suemasu, T
1998
80 1-4 p. 473-477
5 p.
article
35 Field-induced functions of porous Si as a confined system Koshida, Nobuyoshi
1998
80 1-4 p. 37-42
6 p.
article
36 Growth and structural characterization of semiconducting Ru2Si3 Lenssen, D
1998
80 1-4 p. 461-465
5 p.
article
37 Improvement of the luminescence in p-type as-prepared or dye impregnated porous silicon microcavities Setzu, S.
1998
80 1-4 p. 129-132
4 p.
article
38 Index 1998
80 1-4 p. 523-525
3 p.
article
39 Index 1998
80 1-4 p. 531-
1 p.
article
40 Index 1998
80 1-4 p. 527-529
3 p.
article
41 Inelastic light scattering and X-ray diffraction from thick free-standing porous silicon films Andrianov, A.V.
1998
80 1-4 p. 193-198
6 p.
article
42 Interference filters from porous silicon with laterally varying wavelength of reflection Hunkel, D.
1998
80 1-4 p. 133-136
4 p.
article
43 Laser assisted chemical vapour deposition of silicon oxide layers Paiva, P.
1998
80 1-4 p. 141-145
5 p.
article
44 Light emission from porous silicon single and multiple cavities Squire, E.K.
1998
80 1-4 p. 125-128
4 p.
article
45 Light emission from Si nanocrystals embedded in CaF2 epilayers on Si(111): Effect of rapid thermal annealing Watanabe, Masahiro
1998
80 1-4 p. 253-256
4 p.
article
46 Light emitting diode structure based on Si nanocrystals formed by implantation into thermal oxide Lalic, Nenad
1998
80 1-4 p. 263-267
5 p.
article
47 Light-emitting structures based on nanocrystalline (Si/CaF2) multiquantum wells Nassiopoulou, A.G.
1998
80 1-4 p. 81-89
9 p.
article
48 Local order in light emitting porous silicon studied by XEOL and TEY Dalba, G.
1998
80 1-4 p. 103-107
5 p.
article
49 Luminescence from porous silicon doped with erbium–ytterbium complexes Filippov, V.V
1998
80 1-4 p. 395-398
4 p.
article
50 Luminescence from Si-Si1−x Ge x /Si1−yCy-Si structures Joelsson, Kenneth B
1998
80 1-4 p. 497-501
5 p.
article
51 Luminescence properties of Er3+ in SiN/PS:Er Uekusa, S
1998
80 1-4 p. 339-342
4 p.
article
52 1.54μm Emission of pulsed-laser deposited Er-doped films on Si Lanzerstorfer, S.
1998
80 1-4 p. 353-356
4 p.
article
53 1.54μm Light emission from Er/O and Er/F doped Si p–i–n diodes grown by molecular beam epitaxy Ni, W.-X.
1998
80 1-4 p. 309-314
6 p.
article
54 New efficient mechanism of excitation of electroluminescence from erbium ions in crystalline silicon Bresler, M.S.
1998
80 1-4 p. 375-379
5 p.
article
55 On the morphology of stain-etched porous silicon films Schirone, L.
1998
80 1-4 p. 163-167
5 p.
article
56 On the origin of 1.5μm luminescence in porous silicon coated with sol–gel derived erbium-doped Fe2O3 films Gaponenko, N.V.
1998
80 1-4 p. 399-403
5 p.
article
57 Optical band gap of Si nanoclusters Delerue, C.
1998
80 1-4 p. 65-73
9 p.
article
58 Optical properties of nanocrystalline silicon thin films produced by size-selected cluster beam deposition Laguna, M.A
1998
80 1-4 p. 223-228
6 p.
article
59 Optical properties of neodymium incorporated in porous silicon M'ghaı̈eth, R.
1998
80 1-4 p. 387-390
4 p.
article
60 Optical properties of Si/CaF2 superlattices Degoli, Elena
1998
80 1-4 p. 411-415
5 p.
article
61 Optical waveguides in porous silicon pre-patterned by localised nitrogen implantation. Arrand, H.F
1998
80 1-4 p. 199-202
4 p.
article
62 Other contents 1998
80 1-4 p. ix-xv
nvt p.
article
63 Photoluminescence and electroluminescence investigations at Ge-rich SiO2 layers Rebohle, L
1998
80 1-4 p. 275-279
5 p.
article
64 Photoluminescence and paramagnetic defects in silicon-implanted silicon dioxide layers Bratus', V.Ya.
1998
80 1-4 p. 269-273
5 p.
article
65 Photoluminescence and X-ray characterisation of Si/Si1−x Ge x multiple quantum wells Sidiki, T.P.
1998
80 1-4 p. 503-507
5 p.
article
66 Photoluminescence of Ge nanostructures grown by gas source molecular beam epitaxy on silicon (118) surface Serpentini, M
1998
80 1-4 p. 515-518
4 p.
article
67 Photoluminescence of porous silicon surfaces stabilized through Lewis acid mediated hydrosilylation Buriak, Jillian M
1998
80 1-4 p. 29-35
7 p.
article
68 Photoluminescence quenching of porous silicon in organic solvents: evidence for dielectric effects Fellah, S.
1998
80 1-4 p. 109-113
5 p.
article
69 Photoluminescence studies of porous silicon microcavities Xiong, Z.H.
1998
80 1-4 p. 137-140
4 p.
article
70 Radiative emission properties of a-SiN:H based nanometric multilayers for light emitting devices Giorgis, F.
1998
80 1-4 p. 423-427
5 p.
article
71 Radiative processes in bulk crystalline silicon Davies, Gordon
1998
80 1-4 p. 1-7
7 p.
article
72 Room-temperature electroluminescence from erbium-doped amorphous hydrogenated silicon Gusev, O.B
1998
80 1-4 p. 335-338
4 p.
article
73 Room-temperature SiGe light-emitting diodes Vescan, L
1998
80 1-4 p. 485-489
5 p.
article
74 Scattering-controlled recombination of Δ2-light-hole indirect excitons and apparently enhanced quantum confined Stark effect in tensilely strained Si1−y C y /Si (001) quantum wells Fukatsu, S
1998
80 1-4 p. 429-433
5 p.
article
75 Short period (Si6Ge4) p superlattices: photoluminescence and electron microscopy study Pinto, N
1998
80 1-4 p. 509-513
5 p.
article
76 Size dependent photoluminescence from Si nanoclusters produced by laser ablation Patrone, L
1998
80 1-4 p. 217-221
5 p.
article
77 Solvent detection using porous silicon optical waveguides Arrand, H.F.
1998
80 1-4 p. 119-123
5 p.
article
78 Strongly nonlinear luminescence in oxidized porous silicon films Koyama, Hideki
1998
80 1-4 p. 99-102
4 p.
article
79 Strong visible photoluminescence in amorphous SiO x and SiO x :H thin films prepared by thermal evaporation of SiO powder Rinnert, H
1998
80 1-4 p. 445-448
4 p.
article
80 Substrate temperature dependence of the photoluminescence efficiency of co-sputtered Si/SiO2 layers Charvet, S
1998
80 1-4 p. 241-245
5 p.
article
81 The effect of annealing under hydrostatic pressure on the visible photoluminescence from si+-ion implanted SiO2 films Tyschenko, I.E
1998
80 1-4 p. 229-233
5 p.
article
82 The influence of oxygen on the lattice sites of rare earths in silicon Wahl, U
1998
80 1-4 p. 303-307
5 p.
article
83 The integration of nanoscale porous silicon light emitters: materials science, properties, and integration with electronic circuitry Fauchet, Philippe M
1998
80 1-4 p. 53-64
12 p.
article
84 The origin of photoluminescence in Ge-implanted SiO2 layers Kim, H.B.
1998
80 1-4 p. 281-284
4 p.
article
85 Time-resolved photoluminescence study of the red emission in nanoporous SiGe alloys Lebib, S
1998
80 1-4 p. 153-157
5 p.
article
86 Tunability of the photoluminescence in porous silicon due to different polymer dielectric environments Lopez, Herman A.
1998
80 1-4 p. 115-118
4 p.
article
87 Ultrafast carrier dynamics in wide gap hydrogenated amorphous silicon Kudrna, J
1998
80 1-4 p. 435-438
4 p.
article
88 Understanding and control of the erbium non-radiative de-excitation processes in silicon Franzò, Giorgia
1998
80 1-4 p. 19-28
10 p.
article
89 Visible and infrared photoluminescence from Er-doped SiO x Wan, J
1998
80 1-4 p. 369-373
5 p.
article
90 Visible light emission from Si/SiO2 superlattices in optical microcavities Lockwood, D.J
1998
80 1-4 p. 75-79
5 p.
article
91 Visible photoluminescence and its mechanisms from a-SiO x :H films with different stoichiometry Wehrspohn, R.B.
1998
80 1-4 p. 449-453
5 p.
article
92 Visible photoluminescence from a-Si:H/SiO2 superlattices fabricated by UHV evaporation Nishimoto, K.
1998
80 1-4 p. 439-444
6 p.
article
93 XPS investigation of a-Si:H thin films after light soaking Toneva, A
1998
80 1-4 p. 455-459
5 p.
article
94 X-ray photoelectron spectroscopy characterization of stain-etched luminescent porous silicon films Zanoni, R
1998
80 1-4 p. 159-162
4 p.
article
                             94 results found
 
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