nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A combined fluid dynamic and 3D kinetic Monte Carlo investigation of the selective deposition of GaAs and InP
|
Rondanini, Maurizio |
|
2004 |
272 |
1-4 |
p. 52-58 7 p. |
artikel |
2 |
AFM and temperature-dependent photoluminescence studies of the degree of localization induced by quantum-dot like states in InGaN single quantum well light emitting diodes grown by MOCVD on (0001) sapphire
|
Florescu, D.I. |
|
2004 |
272 |
1-4 |
p. 449-454 6 p. |
artikel |
3 |
Alternative precursor growth of quantum dot-based VCSELs and edge emitters for near infrared wavelengths
|
Kaiander, I.N. |
|
2004 |
272 |
1-4 |
p. 154-160 7 p. |
artikel |
4 |
Aluminum incorporation control in AlGaN MOVPE: experimental and modeling study
|
Kondratyev, A.V. |
|
2004 |
272 |
1-4 |
p. 420-425 6 p. |
artikel |
5 |
An RDS, LEED, and STM Study of MOCVD-Prepared Si(100) surfaces
|
Hannappel, T. |
|
2004 |
272 |
1-4 |
p. 24-29 6 p. |
artikel |
6 |
Antimony as a surfactant during the growth of GaN-based GaNAs alloys by metal organic vapor-phase epitaxy
|
Kimura, Akitaka |
|
2004 |
272 |
1-4 |
p. 432-437 6 p. |
artikel |
7 |
Artificial control of ZnO nanostructures grown by metalorganic chemical vapor deposition
|
Fujita, Shizuo |
|
2004 |
272 |
1-4 |
p. 138-142 5 p. |
artikel |
8 |
As-grown p-type GaN growth by dimethylhydrazine nitrogen precursor
|
Park, Eun-Hyun |
|
2004 |
272 |
1-4 |
p. 426-431 6 p. |
artikel |
9 |
Atomic vapour deposition (AVD) of SrBi2Ta2O9 using an all alkoxide precursor
|
Chalker, Paul R. |
|
2004 |
272 |
1-4 |
p. 778-784 7 p. |
artikel |
10 |
Author Index
|
|
|
2004 |
272 |
1-4 |
p. 844-855 12 p. |
artikel |
11 |
Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates
|
Motohisa, J. |
|
2004 |
272 |
1-4 |
p. 180-185 6 p. |
artikel |
12 |
C-doped GaAsSb base HBT without hydrogen passivation grown by MOVPE
|
Oda, Yasuhiro |
|
2004 |
272 |
1-4 |
p. 700-705 6 p. |
artikel |
13 |
Characterisation of quaternary AlInGaN thick layers and quantum wells grown by MOVPE
|
Perez-Solorzano, V. |
|
2004 |
272 |
1-4 |
p. 386-392 7 p. |
artikel |
14 |
Characteristics of InGaAsN/GaAsN quantum well lasers emitting in the 1.4-μm regime
|
Yeh, Jeng-Ya |
|
2004 |
272 |
1-4 |
p. 719-725 7 p. |
artikel |
15 |
Characterization of GaInN light-emitting diodes with distributed Bragg reflector grown on Si
|
Ishikawa, Hiroyasu |
|
2004 |
272 |
1-4 |
p. 322-326 5 p. |
artikel |
16 |
Characterization of GaN grown on patterned Si(111) substrates
|
Wang, D. |
|
2004 |
272 |
1-4 |
p. 489-495 7 p. |
artikel |
17 |
Chemical kinetics and design of gas inlets for III–V growth by MOVPE in a quartz showerhead reactor
|
Li, Zhi-qiang |
|
2004 |
272 |
1-4 |
p. 47-51 5 p. |
artikel |
18 |
Comparison of dilute nitride growth on a single- and 8×4-inch multiwafer MOVPE system for solar cell applications
|
Dimroth, F. |
|
2004 |
272 |
1-4 |
p. 726-731 6 p. |
artikel |
19 |
Considerable improvement of optical property of GaInNAs/GaAs quantum well
|
Ishizuka, Takashi |
|
2004 |
272 |
1-4 |
p. 760-764 5 p. |
artikel |
20 |
Contents ICMOVPE-12
|
|
|
2004 |
272 |
1-4 |
p. vii-xvi nvt p. |
artikel |
21 |
Controlled fabrication of InGaAs quantum dots by selective area epitaxy MOCVD growth
|
Elarde, V.C. |
|
2004 |
272 |
1-4 |
p. 148-153 6 p. |
artikel |
22 |
Control of epitaxial defects for optimal AlGaN/GaN HEMT performance and reliability
|
Green, D.S. |
|
2004 |
272 |
1-4 |
p. 285-292 8 p. |
artikel |
23 |
Correlation of film properties and reduced impurity concentrations in sources for III/V-MOVPE using high-purity trimethylindium and tertiarybutylphosphine
|
Shenai, Deodatta V. |
|
2004 |
272 |
1-4 |
p. 603-608 6 p. |
artikel |
24 |
Defect study of MOVPE-grown InGaP layers on GaAs
|
Knauer, A. |
|
2004 |
272 |
1-4 |
p. 627-632 6 p. |
artikel |
25 |
Developments in abatement technology for MOCVD processing
|
Sweeney, Joseph |
|
2004 |
272 |
1-4 |
p. 836-843 8 p. |
artikel |
26 |
Dual wavelength InGaN/GaN multi-quantum well LEDs grown by metalorganic vapor phase epitaxy
|
Qi, Y.D. |
|
2004 |
272 |
1-4 |
p. 333-340 8 p. |
artikel |
27 |
Editorial Board
|
|
|
2004 |
272 |
1-4 |
p. ii- 1 p. |
artikel |
28 |
Effect of growth interruption on surface recombination velocity in GaInAsSb/AlGaAsSb heterostructures grown by organometallic vapor-phase epitaxy
|
Wang, C.A. |
|
2004 |
272 |
1-4 |
p. 711-718 8 p. |
artikel |
29 |
Effects of Gas switching sequences on GaAs/GaAs1− y Sb y superlattices
|
Hawkins, B.E. |
|
2004 |
272 |
1-4 |
p. 686-693 8 p. |
artikel |
30 |
Effects of growth pressure on AlGaN and Mg-doped GaN grown using multiwafer metal organic vapor phase epitaxy system
|
Tokunaga, H. |
|
2004 |
272 |
1-4 |
p. 348-352 5 p. |
artikel |
31 |
Efficient removal of UDMH from dilute nitride MOCVD exhaust streams
|
Pahle, Jörg |
|
2004 |
272 |
1-4 |
p. 810-815 6 p. |
artikel |
32 |
Environmental considerations in the MOVPE growth of (Hg,Cd)Te
|
Porter, Keith A. |
|
2004 |
272 |
1-4 |
p. 829-835 7 p. |
artikel |
33 |
Environment, health and safety issues for sources used in MOVPE growth of compound semiconductors
|
Shenai-Khatkhate, Deodatta V. |
|
2004 |
272 |
1-4 |
p. 816-821 6 p. |
artikel |
34 |
Fabrication and characterization of GaAs two-dimensional air-hole arrays on GaAs (111)A substrates using selective-area MOVPE
|
Takeda, Junichiro |
|
2004 |
272 |
1-4 |
p. 570-575 6 p. |
artikel |
35 |
Facet-controlled three-step growth of high-quality GaN on sapphire substrates by mass-production-type metalorganic vapor phase epitaxy
|
Nitta, Shugo |
|
2004 |
272 |
1-4 |
p. 438-443 6 p. |
artikel |
36 |
Formation of high-density GaN self-assembled quantum dots by MOCVD
|
Hoshino, K. |
|
2004 |
272 |
1-4 |
p. 161-166 6 p. |
artikel |
37 |
GaN-based blue light-emitting diodes grown and fabricated on patterned sapphire substrates by metalorganic vapor-phase epitaxy
|
Feng, Z.H. |
|
2004 |
272 |
1-4 |
p. 327-332 6 p. |
artikel |
38 |
GaN heteroepitaxy on Si(001)
|
Schulze, F. |
|
2004 |
272 |
1-4 |
p. 496-499 4 p. |
artikel |
39 |
Growth and characterization of AlInN on AlN template
|
Fujimori, Takao |
|
2004 |
272 |
1-4 |
p. 381-385 5 p. |
artikel |
40 |
Growth and characterization of GaN-based structures on SiCOI-engineered substrates
|
Dikme, Y. |
|
2004 |
272 |
1-4 |
p. 500-505 6 p. |
artikel |
41 |
Growth and characterization of InAlP/InGaAs double barrier RTDs
|
Neumann, S. |
|
2004 |
272 |
1-4 |
p. 555-558 4 p. |
artikel |
42 |
Growth and characterization of p-type InGaAs on InP substrates by LP-MOVPE using a new carbon-dopant source, CBrCl3
|
Uchida, Kazuo |
|
2004 |
272 |
1-4 |
p. 658-663 6 p. |
artikel |
43 |
Growth and design of deep-UV (240–290nm) light emitting diodes using AlGaN alloys
|
Allerman, A.A. |
|
2004 |
272 |
1-4 |
p. 227-241 15 p. |
artikel |
44 |
Growth and laser-assisted liftoff of low dislocation density AlN thin films for deep-UV light-emitting diodes
|
Kaeding, John F. |
|
2004 |
272 |
1-4 |
p. 257-263 7 p. |
artikel |
45 |
Growth mechanism of atmospheric pressure MOVPE of GaN and its alloys: gas phase chemistry and its impact on reactor design
|
Matsumoto, Koh |
|
2004 |
272 |
1-4 |
p. 360-369 10 p. |
artikel |
46 |
Growth mechanisms for GaAs nanowires grown in CBE
|
Persson, A.I. |
|
2004 |
272 |
1-4 |
p. 167-174 8 p. |
artikel |
47 |
Growth monitoring of GaAsSb:C/InP heterostructures with reflectance anisotropy spectroscopy
|
Brunner, F. |
|
2004 |
272 |
1-4 |
p. 111-117 7 p. |
artikel |
48 |
Growth of Al x Ga1− x N-layers on planar and patterned substrates
|
Rossow, U. |
|
2004 |
272 |
1-4 |
p. 506-514 9 p. |
artikel |
49 |
Growth of A1N by the chemical vapor reaction process and its application to lateral overgrowth on patterned sapphire substrates
|
Fujito, Kenji |
|
2004 |
272 |
1-4 |
p. 370-376 7 p. |
artikel |
50 |
Growth of GaP nanotree structures by sequential seeding of 1D nanowires
|
Dick, Kimberly A. |
|
2004 |
272 |
1-4 |
p. 131-137 7 p. |
artikel |
51 |
Growth of one-dimensional nanostructures in MOVPE
|
Seifert, Werner |
|
2004 |
272 |
1-4 |
p. 211-220 10 p. |
artikel |
52 |
Growth of self-assembled Al x In y Ga 1 - x - y N quantum dots by MOVPE
|
Pérez-Solórzano, V. |
|
2004 |
272 |
1-4 |
p. 186-191 6 p. |
artikel |
53 |
Growth of ZnO films by MOVPE using diisopropylzinc and alcohols
|
Fujita, Yasuhisa |
|
2004 |
272 |
1-4 |
p. 795-799 5 p. |
artikel |
54 |
Heteroepitaxy and nitrogen doping of high-quality ZnO
|
Dadgar, A. |
|
2004 |
272 |
1-4 |
p. 800-804 5 p. |
artikel |
55 |
High contrast InP/InGaAsP grating MOCVD regrowth using TBA and TBP
|
Skogen, Erik J. |
|
2004 |
272 |
1-4 |
p. 564-569 6 p. |
artikel |
56 |
High efficiency GaN-based LEDs and lasers on SiC
|
Edmond, John |
|
2004 |
272 |
1-4 |
p. 242-250 9 p. |
artikel |
57 |
High-performance GaN/InGaN heterostructure FETs on Mg-doped GaN current blocking layers
|
Kuan, T.M. |
|
2004 |
272 |
1-4 |
p. 300-304 5 p. |
artikel |
58 |
High-power laser structures grown on bulk GaN crystals
|
Prystawko, Pawel |
|
2004 |
272 |
1-4 |
p. 274-277 4 p. |
artikel |
59 |
High-quality Al0.12Ga0.88N film with low dislocation density grown on facet-controlled Al0.12Ga0.88N by MOVPE
|
Kawashima, Takeshi |
|
2004 |
272 |
1-4 |
p. 377-380 4 p. |
artikel |
60 |
High uniformity of InGaAsP layers grown by multi-wafer MOVPE system
|
Shimizu, Eiichi |
|
2004 |
272 |
1-4 |
p. 596-602 7 p. |
artikel |
61 |
Impact of thermal annealing on the characteristics of InGaN/GaN LEDs on Si(111)
|
Fehse, K. |
|
2004 |
272 |
1-4 |
p. 251-256 6 p. |
artikel |
62 |
Improved performance of MOVPE-grown GaInNAs quantum wells by control of interfacial strain
|
Kim, Ki-Sung |
|
2004 |
272 |
1-4 |
p. 748-752 5 p. |
artikel |
63 |
Improved process control, lowered costs and reduced risks through the use of non-destructive mobility and sheet carrier density measurements on GaAs and GaN wafers
|
Nguyen, D. |
|
2004 |
272 |
1-4 |
p. 59-64 6 p. |
artikel |
64 |
InAs quantum dots over InGaAs for infrared photodetectors
|
Pires, M.P. |
|
2004 |
272 |
1-4 |
p. 192-197 6 p. |
artikel |
65 |
Influence of AlGaN nucleation layers on structural and electrical properties of GaN on 4H-SiC
|
Boeykens, S. |
|
2004 |
272 |
1-4 |
p. 312-317 6 p. |
artikel |
66 |
Influence of laser power on crystalline quality of InGaN with high indium content grown by pulse laser-assisted MOVPE
|
Kangawa, Yoshihiro |
|
2004 |
272 |
1-4 |
p. 444-448 5 p. |
artikel |
67 |
Influence of the reactor total pressure on optical properties of MOCVD grown InGaN layers
|
Strittmatter, A. |
|
2004 |
272 |
1-4 |
p. 415-419 5 p. |
artikel |
68 |
InN growth and annealing investigations using in-situ spectroscopic ellipsometry
|
Drago, M. |
|
2004 |
272 |
1-4 |
p. 87-93 7 p. |
artikel |
69 |
In-situ etching of InP and InGaAlAs materials by using HCl gas in metalorganic vapor-phase epitaxy
|
Tsuchiya, T. |
|
2004 |
272 |
1-4 |
p. 125-130 6 p. |
artikel |
70 |
In situ measurements of strains and stresses in GaN heteroepitaxy and its impact on growth temperature
|
Dadgar, A. |
|
2004 |
272 |
1-4 |
p. 72-75 4 p. |
artikel |
71 |
In situ metrology advances in MOCVD growth of GaN-based materials
|
Belousov, M. |
|
2004 |
272 |
1-4 |
p. 94-99 6 p. |
artikel |
72 |
In situ optical analysis of low temperature MOCVD GaN nucleation layer formation via multiple wavelength ellipsometry
|
Schmidegg, Klaus |
|
2004 |
272 |
1-4 |
p. 106-110 5 p. |
artikel |
73 |
In situ stress measurements during MOCVD growth of AlGaN on SiC
|
Acord, Jeremy D. |
|
2004 |
272 |
1-4 |
p. 65-71 7 p. |
artikel |
74 |
Instructions to Authors
|
|
|
2004 |
272 |
1-4 |
p. I-II nvt p. |
artikel |
75 |
Interdiffusion in highly strained InGaAs-QWs for high power laser diode applications
|
Bugge, F. |
|
2004 |
272 |
1-4 |
p. 531-537 7 p. |
artikel |
76 |
Intrinsic carbon doping of (AlGa)As for (InGa)As laser structures (λ≈1.17μm)
|
Gottschalch, V. |
|
2004 |
272 |
1-4 |
p. 642-649 8 p. |
artikel |
77 |
Introduction
|
Biefeld, R.M. |
|
2004 |
272 |
1-4 |
p. 1- 1 p. |
artikel |
78 |
Investigation of optical and electrical properties of Mg-doped p-In x Ga1− x N, p-GaN and p-Al y Ga1− y N grown by MOCVD
|
Lee, Sung-Nam |
|
2004 |
272 |
1-4 |
p. 455-459 5 p. |
artikel |
79 |
Laser diode of 350.9nm wavelength grown on sapphire substrate by MOVPE
|
Iida, Kazuyoshi |
|
2004 |
272 |
1-4 |
p. 270-273 4 p. |
artikel |
80 |
LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide: application to HEMT devices
|
di Forte Poisson, M.-A. |
|
2004 |
272 |
1-4 |
p. 305-311 7 p. |
artikel |
81 |
Marker layers for the development of a multistep GaN FACELO process
|
Habel, Frank |
|
2004 |
272 |
1-4 |
p. 515-519 5 p. |
artikel |
82 |
Material properties of graded composition In x Ga1− x P buffer layers grown on GaP by organometallic vapor phase epitaxy
|
Hasenöhrl, S. |
|
2004 |
272 |
1-4 |
p. 633-641 9 p. |
artikel |
83 |
Measurement of vapour pressure of In-based metalorganics for MOVPE
|
Fulem, M. |
|
2004 |
272 |
1-4 |
p. 42-46 5 p. |
artikel |
84 |
Metalorganic vapor-phase epitaxy of room-temperature, low-threshold InGaAs/AlInAs quantum cascade lasers
|
Bour, D. |
|
2004 |
272 |
1-4 |
p. 526-530 5 p. |
artikel |
85 |
Microscopic spatial distribution of bound excitons in high-quality ZnO
|
Bertram, F. |
|
2004 |
272 |
1-4 |
p. 785-788 4 p. |
artikel |
86 |
MOCVD-grown InGaN-channel HEMT structures with electron mobility of over 1000 cm 2 / V s
|
Okamoto, Naoya |
|
2004 |
272 |
1-4 |
p. 278-284 7 p. |
artikel |
87 |
MOCVD growth of highly strained InGaAs:Sb–GaAs–GaAsP quantum well vertical cavity surface-emitting lasers with 1.27μm emission
|
Kuo, H.C. |
|
2004 |
272 |
1-4 |
p. 538-542 5 p. |
artikel |
88 |
MOCVD growth of monomethylhydrazine-doped ZnO layers
|
Saito, Koki |
|
2004 |
272 |
1-4 |
p. 805-809 5 p. |
artikel |
89 |
Modulation-doped superlattice AlGaN barrier GaN/AlGaN HFETs
|
Chowdhury, Uttiya |
|
2004 |
272 |
1-4 |
p. 318-321 4 p. |
artikel |
90 |
MOVPE GaN growth: determination of activation energy using in-situ reflectometry
|
Kaluza, N. |
|
2004 |
272 |
1-4 |
p. 100-105 6 p. |
artikel |
91 |
MOVPE-grown quantum cascade lasers operating at ∼9μm wavelength
|
Krysa, A.B. |
|
2004 |
272 |
1-4 |
p. 682-685 4 p. |
artikel |
92 |
MOVPE growth and characterization of high-Al-content AlGaN/GaN heterostructures on 100-mm-diameter sapphire substrates
|
Miyoshi, Makoto |
|
2004 |
272 |
1-4 |
p. 293-299 7 p. |
artikel |
93 |
MOVPE growth experiments of the novel (GaIn)(NP)/GaP material system
|
Kunert, Bernardette |
|
2004 |
272 |
1-4 |
p. 753-759 7 p. |
artikel |
94 |
MOVPE growth of AlGaInAs–InP highly tensile-strained MQWs for 1.3μm low-threshold lasers
|
Decobert, J. |
|
2004 |
272 |
1-4 |
p. 543-548 6 p. |
artikel |
95 |
MOVPE growth of (AlGaIn)P/(GaIn)P heterostructures using TBP
|
El-Zein, N. |
|
2004 |
272 |
1-4 |
p. 609-614 6 p. |
artikel |
96 |
MOVPE process for horizontal reactors with reduced parasitic deposition
|
Hardtdegen, H. |
|
2004 |
272 |
1-4 |
p. 407-414 8 p. |
artikel |
97 |
MOVPE selectively grown GaAs nano-wires with self-aligned W side gate
|
Ooike, N. |
|
2004 |
272 |
1-4 |
p. 175-179 5 p. |
artikel |
98 |
1.5μm VCSEL structure optimization for high-power and high-temperature operation
|
Mereuta, A. |
|
2004 |
272 |
1-4 |
p. 520-525 6 p. |
artikel |
99 |
Nitrogen–arsenic exchange processes and investigation of the nitrided GaAs surfaces in MOVPE
|
Hoffmann, V. |
|
2004 |
272 |
1-4 |
p. 30-36 7 p. |
artikel |
100 |
Nucleation and growth of InN thin films using conventional and pulsed MOVPE
|
Johnson, M.C. |
|
2004 |
272 |
1-4 |
p. 400-406 7 p. |
artikel |
101 |
Optical and structural studies of GaN 3D structures selectively grown by MOCVD
|
Viste, P. |
|
2004 |
272 |
1-4 |
p. 466-474 9 p. |
artikel |
102 |
Optimization of GaN MOVPE growth on patterned Si substrates using spectroscopic in situ reflectance
|
Strittmatter, A. |
|
2004 |
272 |
1-4 |
p. 76-80 5 p. |
artikel |
103 |
Optimized 9×2-inch MOVPE reactor for the growth of Al-containing antimonides
|
Dimroth, F. |
|
2004 |
272 |
1-4 |
p. 706-710 5 p. |
artikel |
104 |
Ordering structure along the [ 0 0 1 ] direction of InAlAs
|
Kurihara, K. |
|
2004 |
272 |
1-4 |
p. 9-14 6 p. |
artikel |
105 |
Passivation of GaAs surface by ultrathin epitaxial GaN layer
|
Riikonen, J. |
|
2004 |
272 |
1-4 |
p. 621-626 6 p. |
artikel |
106 |
Pendeoepitaxy of GaAs and In0.15Ga0.85As using laterally oxidized GaAs/Al0.96Ga0.04As templates
|
Cederberg, J.G. |
|
2004 |
272 |
1-4 |
p. 588-595 8 p. |
artikel |
107 |
Performance comparison between integrated 40 Gb/s EAM devices grown by selective area growth and butt-joint overgrowth
|
Zhu, J.T. |
|
2004 |
272 |
1-4 |
p. 576-581 6 p. |
artikel |
108 |
Phase control of GaN on Si by nanoscale faceting in metalorganic vapor-phase epitaxy
|
Lee, S.C. |
|
2004 |
272 |
1-4 |
p. 2-8 7 p. |
artikel |
109 |
Preparation and characterization of ultra-thin ferroelectric PZT films grown by plasma-assisted CVD
|
Nishida, Ken |
|
2004 |
272 |
1-4 |
p. 789-794 6 p. |
artikel |
110 |
Progress and continuing challenges in GaSb-based III–V alloys and heterostructures grown by organometallic vapor-phase epitaxy
|
Wang, C.A. |
|
2004 |
272 |
1-4 |
p. 664-681 18 p. |
artikel |
111 |
Properties of GaAs/AlGaAs quantum wells grown by MOVPE using vicinal GaAs substrates
|
Rudra, Alok |
|
2004 |
272 |
1-4 |
p. 615-620 6 p. |
artikel |
112 |
Real-time control of quantum dot laser growth using reflectance anisotropy spectroscopy
|
Pohl, U.W. |
|
2004 |
272 |
1-4 |
p. 143-147 5 p. |
artikel |
113 |
Reconstructions of MOVPE-prepared group-V-rich GaAsSb(100) surfaces
|
Kollonitsch, Z. |
|
2004 |
272 |
1-4 |
p. 694-699 6 p. |
artikel |
114 |
Reduction of point defect density in cubic GaN epilayers on (001) GaAs substrates using Al x Ga 1 - x N/GaN superlattice underlayers
|
Chichibu, S.F. |
|
2004 |
272 |
1-4 |
p. 481-488 8 p. |
artikel |
115 |
Red VCSEL for high-temperature applications
|
Rossbach, R. |
|
2004 |
272 |
1-4 |
p. 549-554 6 p. |
artikel |
116 |
Routine growth of InP based device structures using process calibration with optical in-situ techniques
|
Wolfram, P. |
|
2004 |
272 |
1-4 |
p. 118-124 7 p. |
artikel |
117 |
Safety benefits of using a sub-atmospheric pressure hydride gas source for MOCVD
|
Raynor, Mark W. |
|
2004 |
272 |
1-4 |
p. 822-828 7 p. |
artikel |
118 |
Sapphire substrate misorientation effects on GaN nucleation layer properties
|
Lu, D. |
|
2004 |
272 |
1-4 |
p. 353-359 7 p. |
artikel |
119 |
Scanning e-beam pumped resonant periodic gain VCSEL based on an MOVPE-grown GaInP/AlGaInP MQW structure
|
Bondarev, V.Yu. |
|
2004 |
272 |
1-4 |
p. 559-563 5 p. |
artikel |
120 |
Selective growth of GaInN quantum dot structures
|
Jetter, M. |
|
2004 |
272 |
1-4 |
p. 204-210 7 p. |
artikel |
121 |
Selective MOVPE growth of tilted arrayed waveguides from [011] direction
|
Kawakita, Yasumasa |
|
2004 |
272 |
1-4 |
p. 582-587 6 p. |
artikel |
122 |
Self-assembled In(Ga) As islands on Ge substrate
|
Knuuttila, L. |
|
2004 |
272 |
1-4 |
p. 221-226 6 p. |
artikel |
123 |
Solar cells with (BGaIn)As and (InGa)(NAs) as absorption layers
|
Leibiger, G. |
|
2004 |
272 |
1-4 |
p. 732-738 7 p. |
artikel |
124 |
Specific structural and compositional properties of (GaIn)(NAs) and their influence on optoelectronic device performance
|
Volz, Kerstin |
|
2004 |
272 |
1-4 |
p. 739-747 9 p. |
artikel |
125 |
Strain effects of AlN interlayers for MOVPE growth of crack-free AlGaN and AlN/GaN multilayers on GaN
|
McAleese, C. |
|
2004 |
272 |
1-4 |
p. 475-480 6 p. |
artikel |
126 |
Structural, optical and electrical properties of GaN and InGaN films grown by MOCVD
|
Poochinda, Kunakorn |
|
2004 |
272 |
1-4 |
p. 460-465 6 p. |
artikel |
127 |
Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD
|
Sacilotti, M. |
|
2004 |
272 |
1-4 |
p. 198-203 6 p. |
artikel |
128 |
Structure optimization of InGaN–GaN ultraviolet light-emitting diode with a low-energy electron injection mechanism
|
Kim, Tae Geun |
|
2004 |
272 |
1-4 |
p. 264-269 6 p. |
artikel |
129 |
Subject Index
|
|
|
2004 |
272 |
1-4 |
p. 857-859 3 p. |
artikel |
130 |
Te-co-doping experiments in ferromagnetic Mn(Ga)As/GaAs-cluster hybrid layers by MOVPE
|
Lampalzer, M. |
|
2004 |
272 |
1-4 |
p. 772-777 6 p. |
artikel |
131 |
Tellurium surfactant effects in the growth of lattice mismatched InAs x P1− x by metal organic vapor-phase epitaxy
|
Newman, Frederick D. |
|
2004 |
272 |
1-4 |
p. 650-657 8 p. |
artikel |
132 |
Temperature dependence of the optical properties on GaInNP
|
Hsu, S.H. |
|
2004 |
272 |
1-4 |
p. 765-771 7 p. |
artikel |
133 |
The influence of ammonia on the growth mode in InGaN/GaN heteroepitaxy
|
Oliver, Rachel A. |
|
2004 |
272 |
1-4 |
p. 393-399 7 p. |
artikel |
134 |
Thermodynamic analysis of InN and In x Ga1− x N MOVPE using various nitrogen sources
|
Kumagai, Yoshinao |
|
2004 |
272 |
1-4 |
p. 341-347 7 p. |
artikel |
135 |
The role of the surface adsorption layer during MOVPE growth analyzed by the flow modulation method
|
Nakano, Takayuki |
|
2004 |
272 |
1-4 |
p. 15-23 9 p. |
artikel |
136 |
Trimethylindium transport studies: the effect of different bubbler designs
|
Smith, L.M. |
|
2004 |
272 |
1-4 |
p. 37-41 5 p. |
artikel |
137 |
Use of SiC band gap temperature dependence for absolute calibration of emissivity corrected pyrometers in III-nitride MOVPE
|
Steins, R. |
|
2004 |
272 |
1-4 |
p. 81-86 6 p. |
artikel |